DE112021004166T5 - Halbleiterlaservorrichtung - Google Patents
Halbleiterlaservorrichtung Download PDFInfo
- Publication number
- DE112021004166T5 DE112021004166T5 DE112021004166.5T DE112021004166T DE112021004166T5 DE 112021004166 T5 DE112021004166 T5 DE 112021004166T5 DE 112021004166 T DE112021004166 T DE 112021004166T DE 112021004166 T5 DE112021004166 T5 DE 112021004166T5
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- Germany
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- axis
- light
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- semiconductor laser
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- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0815—Configuration of resonator having 3 reflectors, e.g. V-shaped resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0811—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection
- H01S3/0812—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/101—Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020133417 | 2020-08-05 | ||
| JP2020-133417 | 2020-08-05 | ||
| PCT/JP2021/026785 WO2022030223A1 (ja) | 2020-08-05 | 2021-07-16 | 半導体レーザ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112021004166T5 true DE112021004166T5 (de) | 2023-06-29 |
Family
ID=80117270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112021004166.5T Withdrawn DE112021004166T5 (de) | 2020-08-05 | 2021-07-16 | Halbleiterlaservorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230170666A1 (https=) |
| JP (1) | JPWO2022030223A1 (https=) |
| CN (1) | CN116057797A (https=) |
| DE (1) | DE112021004166T5 (https=) |
| WO (1) | WO2022030223A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102722060B1 (ko) * | 2022-12-06 | 2024-10-25 | 한국광기술원 | 바형 레이저 다이오드칩 정렬 장치 및 시스템 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000137139A (ja) | 1998-10-30 | 2000-05-16 | Vitalij Lissotschenko | 光学的光束変換装置 |
| JP2004093971A (ja) | 2002-08-30 | 2004-03-25 | Furukawa Electric Co Ltd:The | 半導体レーザ装置、半導体レーザモジュール及び光送信器 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0612678A (ja) * | 1992-06-25 | 1994-01-21 | Ricoh Co Ltd | 光ピックアップ装置 |
| US6658031B2 (en) * | 2001-07-06 | 2003-12-02 | Intel Corporation | Laser apparatus with active thermal tuning of external cavity |
| JP4162876B2 (ja) * | 2001-07-30 | 2008-10-08 | 松下電器産業株式会社 | レーザ装置 |
| JP4153438B2 (ja) * | 2003-01-30 | 2008-09-24 | 富士フイルム株式会社 | レーザ光合波方法および装置 |
| JP2005077436A (ja) * | 2003-08-29 | 2005-03-24 | Precise Gauges Co Ltd | 調芯方法及びその装置、並びに、これを用いた光学モジュールの製造方法及びその装置 |
| US7295581B2 (en) * | 2003-09-29 | 2007-11-13 | Intel Corporation | External cavity tunable optical transmitters |
| US7511880B2 (en) * | 2005-10-14 | 2009-03-31 | Konica Minolta Opto, Inc. | Semiconductor light source module |
| JP2008070157A (ja) * | 2006-09-12 | 2008-03-27 | Sanyo Electric Co Ltd | レーザ照射装置、レーザレーダ装置およびレーザ照射装置の校正方法 |
| JP2008251864A (ja) * | 2007-03-30 | 2008-10-16 | Konica Minolta Opto Inc | レーザ装置 |
| JP5299284B2 (ja) * | 2007-11-21 | 2013-09-25 | コニカミノルタ株式会社 | 圧電アクチュエータ、駆動装置、位置決め装置およびレーザモジュール |
| JP5286512B2 (ja) * | 2008-04-18 | 2013-09-11 | 株式会社日立情報通信エンジニアリング | レーザアニール方法及びレーザアニール装置 |
| US20100272134A1 (en) * | 2009-04-22 | 2010-10-28 | Blanding Douglass L | Rapid Alignment Methods For Optical Packages |
| CN102637994B (zh) * | 2012-04-18 | 2013-11-06 | 清华大学 | 激光光束质量的控制装置及方法 |
| JP5868335B2 (ja) * | 2013-01-15 | 2016-02-24 | 三菱電機株式会社 | 調芯方法 |
| JP6157194B2 (ja) * | 2013-04-23 | 2017-07-05 | 三菱電機株式会社 | レーザ装置および光ビームの波長結合方法 |
| WO2015191542A1 (en) * | 2014-06-14 | 2015-12-17 | TeraDiode, Inc. | Stabilization of wavelength beam combining laser systems in the non-wavelength beam combining direction |
| CN106797102B (zh) * | 2014-10-22 | 2020-04-21 | 松下知识产权经营株式会社 | 激光模块 |
| JP2016181643A (ja) * | 2015-03-25 | 2016-10-13 | 株式会社アマダホールディングス | 半導体レーザ発振器 |
| US10126558B2 (en) * | 2016-01-11 | 2018-11-13 | Ut-Battelle, Llc | Stable, narrow spectral linewidth, fiber-delivered laser source for spin exchange optical pumping |
| JP2019079906A (ja) * | 2017-10-24 | 2019-05-23 | カナレ電気株式会社 | 半導体レーザアレイ光源および光ファイバ結合モジュール、並びに半導体レーザアレイ光源の製造方法。 |
| WO2019155668A1 (ja) * | 2018-02-07 | 2019-08-15 | 三菱電機株式会社 | 半導体レーザ装置 |
| CN111458860A (zh) * | 2020-05-27 | 2020-07-28 | 江苏国和智能科技有限公司 | 一种激光线可调的激光发射装置及控制方法 |
-
2021
- 2021-07-16 JP JP2022541416A patent/JPWO2022030223A1/ja active Pending
- 2021-07-16 DE DE112021004166.5T patent/DE112021004166T5/de not_active Withdrawn
- 2021-07-16 CN CN202180058730.5A patent/CN116057797A/zh active Pending
- 2021-07-16 WO PCT/JP2021/026785 patent/WO2022030223A1/ja not_active Ceased
-
2023
- 2023-01-20 US US18/099,483 patent/US20230170666A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000137139A (ja) | 1998-10-30 | 2000-05-16 | Vitalij Lissotschenko | 光学的光束変換装置 |
| JP2004093971A (ja) | 2002-08-30 | 2004-03-25 | Furukawa Electric Co Ltd:The | 半導体レーザ装置、半導体レーザモジュール及び光送信器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022030223A1 (https=) | 2022-02-10 |
| WO2022030223A1 (ja) | 2022-02-10 |
| US20230170666A1 (en) | 2023-06-01 |
| CN116057797A (zh) | 2023-05-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |