DE112021002443T5 - Solid-State-Bildgebungselement - Google Patents

Solid-State-Bildgebungselement Download PDF

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Publication number
DE112021002443T5
DE112021002443T5 DE112021002443.4T DE112021002443T DE112021002443T5 DE 112021002443 T5 DE112021002443 T5 DE 112021002443T5 DE 112021002443 T DE112021002443 T DE 112021002443T DE 112021002443 T5 DE112021002443 T5 DE 112021002443T5
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DE
Germany
Prior art keywords
reset
transistor
upstream
level
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021002443.4T
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German (de)
English (en)
Inventor
Luonghung Asakura
Yoshiaki Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112021002443T5 publication Critical patent/DE112021002443T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE112021002443.4T 2020-04-21 2021-02-24 Solid-State-Bildgebungselement Pending DE112021002443T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020075184 2020-04-21
JP2020-075184 2020-04-21
JP2020193108 2020-11-20
JP2020-193108 2020-11-20
PCT/JP2021/006785 WO2021215105A1 (ja) 2020-04-21 2021-02-24 固体撮像素子

Publications (1)

Publication Number Publication Date
DE112021002443T5 true DE112021002443T5 (de) 2023-02-23

Family

ID=78270585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021002443.4T Pending DE112021002443T5 (de) 2020-04-21 2021-02-24 Solid-State-Bildgebungselement

Country Status (7)

Country Link
US (2) US12047701B2 (https=)
EP (2) EP4580208A3 (https=)
JP (1) JP7668266B2 (https=)
KR (2) KR20230005146A (https=)
CN (2) CN119629501A (https=)
DE (1) DE112021002443T5 (https=)
WO (1) WO2021215105A1 (https=)

Families Citing this family (13)

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US12452555B2 (en) * 2021-07-26 2025-10-21 Sony Semiconductor Solutions Corporation Solid-state imaging element
WO2023063024A1 (ja) * 2021-10-15 2023-04-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JPWO2023085138A1 (https=) 2021-11-12 2023-05-19
JPWO2023157489A1 (https=) * 2022-02-21 2023-08-24
WO2023166854A1 (ja) * 2022-03-04 2023-09-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
CN119404515A (zh) * 2022-06-29 2025-02-07 索尼半导体解决方案公司 固态成像元件、成像装置和控制固态成像元件的方法
US20250338015A1 (en) * 2022-07-25 2025-10-30 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic apparatus
WO2024095630A1 (ja) * 2022-10-31 2024-05-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202441974A (zh) 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
TW202441976A (zh) 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
TW202441975A (zh) * 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
JP2025162299A (ja) 2024-04-15 2025-10-27 キヤノン株式会社 光電変換装置
JP2025183549A (ja) 2024-06-05 2025-12-17 キヤノン株式会社 光電変換装置、機器

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JP2004186790A (ja) * 2002-11-29 2004-07-02 Sony Corp 固体撮像装置及びその駆動方法
JP3951994B2 (ja) * 2003-09-16 2007-08-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP5167677B2 (ja) 2007-04-12 2013-03-21 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像装置の信号処理方法および撮像装置
US20090091648A1 (en) * 2007-10-09 2009-04-09 Shengmin Lin Multi-resolution Image Sensor Array with High Image Quality Pixel Readout Circuitry
JP5347341B2 (ja) 2008-06-06 2013-11-20 ソニー株式会社 固体撮像装置、撮像装置、電子機器、ａｄ変換装置、ａｄ変換方法
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JP5369779B2 (ja) * 2009-03-12 2013-12-18 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US20100271517A1 (en) * 2009-04-24 2010-10-28 Yannick De Wit In-pixel correlated double sampling pixel
JP4846076B1 (ja) * 2010-06-11 2011-12-28 株式会社ブルックマンテクノロジ 増幅型固体撮像装置
JP5299496B2 (ja) * 2011-11-24 2013-09-25 ソニー株式会社 固体撮像素子及びカメラ装置
TWI530183B (zh) 2011-12-08 2016-04-11 新力股份有限公司 An imaging element, a control method, and an imaging device
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US10070090B2 (en) * 2017-02-03 2018-09-04 SmartSens Technology (U.S.), Inc. Stacked image sensor pixel cell with selectable shutter modes and in-pixel CDS
JP2018186478A (ja) * 2017-04-25 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
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US20200244900A1 (en) * 2019-01-28 2020-07-30 Semiconductor Components Industries, Llc Backside illuminated image sensors with pixels that have high dynamic range, dynamic charge overflow, and global shutter scanning

Also Published As

Publication number Publication date
US20240340551A1 (en) 2024-10-10
WO2021215105A1 (ja) 2021-10-28
US12047701B2 (en) 2024-07-23
CN119629501A (zh) 2025-03-14
US12581218B2 (en) 2026-03-17
JPWO2021215105A1 (https=) 2021-10-28
JP7668266B2 (ja) 2025-04-24
EP4142281A4 (en) 2023-09-20
KR20250004111A (ko) 2025-01-07
EP4142281A1 (en) 2023-03-01
EP4580208A2 (en) 2025-07-02
CN115398885A (zh) 2022-11-25
CN115398885B (zh) 2026-03-20
EP4142281B1 (en) 2025-05-21
EP4580208A3 (en) 2025-08-20
US20230188867A1 (en) 2023-06-15
KR20230005146A (ko) 2023-01-09

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