KR20230005146A - 고체 촬상 소자 - Google Patents

고체 촬상 소자 Download PDF

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Publication number
KR20230005146A
KR20230005146A KR1020227035272A KR20227035272A KR20230005146A KR 20230005146 A KR20230005146 A KR 20230005146A KR 1020227035272 A KR1020227035272 A KR 1020227035272A KR 20227035272 A KR20227035272 A KR 20227035272A KR 20230005146 A KR20230005146 A KR 20230005146A
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KR
South Korea
Prior art keywords
reset
transistor
level
signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227035272A
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English (en)
Korean (ko)
Inventor
릉훙 아사쿠라
요시아키 이나다
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority to KR1020247040465A priority Critical patent/KR20250004111A/ko
Publication of KR20230005146A publication Critical patent/KR20230005146A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020227035272A 2020-04-21 2021-02-24 고체 촬상 소자 Pending KR20230005146A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247040465A KR20250004111A (ko) 2020-04-21 2021-02-24 고체 촬상 소자

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020075184 2020-04-21
JPJP-P-2020-075184 2020-04-21
JP2020193108 2020-11-20
JPJP-P-2020-193108 2020-11-20
PCT/JP2021/006785 WO2021215105A1 (ja) 2020-04-21 2021-02-24 固体撮像素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247040465A Division KR20250004111A (ko) 2020-04-21 2021-02-24 고체 촬상 소자

Publications (1)

Publication Number Publication Date
KR20230005146A true KR20230005146A (ko) 2023-01-09

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227035272A Pending KR20230005146A (ko) 2020-04-21 2021-02-24 고체 촬상 소자
KR1020247040465A Pending KR20250004111A (ko) 2020-04-21 2021-02-24 고체 촬상 소자

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020247040465A Pending KR20250004111A (ko) 2020-04-21 2021-02-24 고체 촬상 소자

Country Status (7)

Country Link
US (2) US12047701B2 (https=)
EP (2) EP4580208A3 (https=)
JP (1) JP7668266B2 (https=)
KR (2) KR20230005146A (https=)
CN (2) CN119629501A (https=)
DE (1) DE112021002443T5 (https=)
WO (1) WO2021215105A1 (https=)

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WO2023063024A1 (ja) * 2021-10-15 2023-04-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JPWO2023085138A1 (https=) 2021-11-12 2023-05-19
JPWO2023157489A1 (https=) * 2022-02-21 2023-08-24
WO2023166854A1 (ja) * 2022-03-04 2023-09-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
CN119404515A (zh) * 2022-06-29 2025-02-07 索尼半导体解决方案公司 固态成像元件、成像装置和控制固态成像元件的方法
US20250338015A1 (en) * 2022-07-25 2025-10-30 Sony Semiconductor Solutions Corporation Solid-state imaging element and electronic apparatus
WO2024095630A1 (ja) * 2022-10-31 2024-05-10 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202441974A (zh) 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
TW202441976A (zh) 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
TW202441975A (zh) * 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
JP2025162299A (ja) 2024-04-15 2025-10-27 キヤノン株式会社 光電変換装置
JP2025183549A (ja) 2024-06-05 2025-12-17 キヤノン株式会社 光電変換装置、機器

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JP2004186790A (ja) * 2002-11-29 2004-07-02 Sony Corp 固体撮像装置及びその駆動方法
JP3951994B2 (ja) * 2003-09-16 2007-08-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP5167677B2 (ja) 2007-04-12 2013-03-21 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像装置の信号処理方法および撮像装置
US20090091648A1 (en) * 2007-10-09 2009-04-09 Shengmin Lin Multi-resolution Image Sensor Array with High Image Quality Pixel Readout Circuitry
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Jae-kyu Lee, et al., A 2.1e-Temporal Noise and-105dB Parasitic Light Sensitivity Backside-Illuminated 2.3μm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology, ISSCC 2020.

Also Published As

Publication number Publication date
US20240340551A1 (en) 2024-10-10
WO2021215105A1 (ja) 2021-10-28
US12047701B2 (en) 2024-07-23
CN119629501A (zh) 2025-03-14
US12581218B2 (en) 2026-03-17
JPWO2021215105A1 (https=) 2021-10-28
JP7668266B2 (ja) 2025-04-24
EP4142281A4 (en) 2023-09-20
KR20250004111A (ko) 2025-01-07
EP4142281A1 (en) 2023-03-01
EP4580208A2 (en) 2025-07-02
CN115398885A (zh) 2022-11-25
CN115398885B (zh) 2026-03-20
EP4142281B1 (en) 2025-05-21
EP4580208A3 (en) 2025-08-20
US20230188867A1 (en) 2023-06-15
DE112021002443T5 (de) 2023-02-23

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