DE112021001065T5 - Lichtemissionsvorrichtung und verfahren zum herstellen einer lichtemissionsvorrichtung - Google Patents

Lichtemissionsvorrichtung und verfahren zum herstellen einer lichtemissionsvorrichtung Download PDF

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Publication number
DE112021001065T5
DE112021001065T5 DE112021001065.4T DE112021001065T DE112021001065T5 DE 112021001065 T5 DE112021001065 T5 DE 112021001065T5 DE 112021001065 T DE112021001065 T DE 112021001065T DE 112021001065 T5 DE112021001065 T5 DE 112021001065T5
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layer
light reflection
emitting device
light emitting
light
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DE112021001065.4T
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German (de)
English (en)
Inventor
Takahiro Arakida
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
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    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18325—Between active layer and substrate
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112021001065.4T 2020-02-18 2021-02-04 Lichtemissionsvorrichtung und verfahren zum herstellen einer lichtemissionsvorrichtung Pending DE112021001065T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-025190 2020-02-18
JP2020025190 2020-02-18
PCT/JP2021/004102 WO2021166661A1 (ja) 2020-02-18 2021-02-04 発光デバイスおよび発光デバイスの製造方法

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DE112021001065T5 true DE112021001065T5 (de) 2022-12-08

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Country Link
US (1) US20230090469A1 (https=)
JP (1) JP7660552B2 (https=)
DE (1) DE112021001065T5 (https=)
TW (1) TWI890733B (https=)
WO (1) WO2021166661A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115313150B (zh) * 2022-08-02 2025-05-30 深圳市嘉敏利光电有限公司 垂直腔面发射激光器及其制备方法
EP4716038A1 (en) * 2023-05-19 2026-03-25 Sony Semiconductor Solutions Corporation Surface light-emitting element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020025190A (ja) 2018-08-07 2020-02-13 日本電信電話株式会社 通信システム、光送信装置及び光受信装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
JP2774582B2 (ja) * 1989-06-30 1998-07-09 株式会社東芝 ▲ｉｉｉ▼―ｖ族化合物半導体素子の製造方法
JPH03171789A (ja) * 1989-11-30 1991-07-25 Toshiba Corp 半導体レーザ装置
JP3133187B2 (ja) * 1992-03-04 2001-02-05 富士通株式会社 半導体装置およびその製造方法
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5892784A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
JP3897186B2 (ja) * 1997-03-27 2007-03-22 シャープ株式会社 化合物半導体レーザ
JP3684778B2 (ja) * 1997-08-21 2005-08-17 富士ゼロックス株式会社 面発光型半導体レーザアレイ
JP3881467B2 (ja) 1998-11-30 2007-02-14 日本電信電話株式会社 面発光レーザ
US6339496B1 (en) * 1999-06-22 2002-01-15 University Of Maryland Cavity-less vertical semiconductor optical amplifier
JP4168202B2 (ja) 1999-11-30 2008-10-22 株式会社リコー 垂直空洞半導体面発光レーザ素子および該レーザ素子を用いた光学システム
US6692979B2 (en) * 2001-08-13 2004-02-17 Optoic Technology, Inc. Methods of fabricating optoelectronic IC modules
DE10144826B4 (de) * 2001-09-12 2007-03-08 Forschungsverbund Berlin E.V. Verfahren zur Herstellung von oberflächenemittierenden Halbleiter-Bauelementen und oberflächenemittierendes Halbleiter-Bauelement
JP4321987B2 (ja) * 2002-01-28 2009-08-26 株式会社リコー 半導体分布ブラッグ反射鏡およびその製造方法および面発光型半導体レーザおよび光通信モジュールおよび光通信システム
JP3802465B2 (ja) * 2002-08-20 2006-07-26 株式会社東芝 垂直共振器型面発光半導体レーザ
US7368759B2 (en) * 2005-09-30 2008-05-06 Hitachi Cable, Ltd. Semiconductor light-emitting device
JP4548329B2 (ja) * 2005-12-19 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
JP2007194561A (ja) * 2006-01-23 2007-08-02 Nec Corp 面発光レーザ
JP2008258277A (ja) * 2007-04-02 2008-10-23 Sharp Corp 半導体レーザ素子、発光モジュール、光伝送モジュールおよび電子機器
JP2009054791A (ja) * 2007-08-27 2009-03-12 Hitachi Cable Ltd 発光素子用エピタキシャルウェハ及びその製造方法並びに発光素子
JP5310371B2 (ja) * 2009-08-10 2013-10-09 ソニー株式会社 半導体発光素子及びその製造方法
WO2011075609A1 (en) * 2009-12-19 2011-06-23 Trilumina Corporation System and method for combining laser arrays for digital outputs
JP5765892B2 (ja) * 2010-05-27 2015-08-19 キヤノン株式会社 垂直共振器型面発光レーザ、それを用いた画像形成装置
TW201401699A (zh) * 2012-04-09 2014-01-01 Sony Corp 半導體雷射裝置組立體
JP6098820B2 (ja) * 2013-08-20 2017-03-22 ウシオ電機株式会社 半導体レーザ装置
KR20160078348A (ko) * 2013-10-29 2016-07-04 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 경조 격자 광전자 기기
WO2017145026A1 (en) * 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
JP2019012721A (ja) * 2017-06-29 2019-01-24 セイコーエプソン株式会社 面発光レーザーおよびその製造方法、電子機器、ならびにプリンター
WO2019107273A1 (ja) * 2017-11-30 2019-06-06 ソニーセミコンダクタソリューションズ株式会社 面発光半導体レーザ
JP7247615B2 (ja) * 2019-01-31 2023-03-29 株式会社リコー 面発光レーザモジュール、光学装置及び面発光レーザ基板
CN110739604B (zh) * 2019-10-24 2021-03-09 厦门乾照半导体科技有限公司 基于柔性衬底的半导体外延结构、vcsel及制作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020025190A (ja) 2018-08-07 2020-02-13 日本電信電話株式会社 通信システム、光送信装置及び光受信装置

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