WO2021166661A1 - 発光デバイスおよび発光デバイスの製造方法 - Google Patents

発光デバイスおよび発光デバイスの製造方法 Download PDF

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Publication number
WO2021166661A1
WO2021166661A1 PCT/JP2021/004102 JP2021004102W WO2021166661A1 WO 2021166661 A1 WO2021166661 A1 WO 2021166661A1 JP 2021004102 W JP2021004102 W JP 2021004102W WO 2021166661 A1 WO2021166661 A1 WO 2021166661A1
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layer
light
emitting device
light emitting
semiconductor
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French (fr)
Japanese (ja)
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荒木田　孝博
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to DE112021001065.4T priority Critical patent/DE112021001065T5/de
Priority to JP2022501777A priority patent/JP7660552B2/ja
Priority to US17/904,073 priority patent/US20230090469A1/en
Publication of WO2021166661A1 publication Critical patent/WO2021166661A1/ja
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    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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    • G—PHYSICS
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    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
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    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
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Definitions

  • the present disclosure relates to a light emitting device and a method for manufacturing the light emitting device.
  • Patent Document 1 laser oscillation is stabilized by providing a protective layer made of p-type InGaP doped with zinc (Zn) as an impurity on a DBR doped with carbon (C) as an impurity.
  • Zn zinc
  • C carbon
  • the light emitting device of the embodiment of the present disclosure includes a semiconductor laminate in which a first light reflecting layer, an active layer, and a second light reflecting layer composed of an arsenic semiconductor layer containing carbon as an impurity are laminated, and a semiconductor laminate.
  • a first buffer layer composed of a phosphorus-based semiconductor layer provided on the first light reflecting layer side of the body and having one surface facing the semiconductor laminate and another surface opposite to the one surface, and at least It is provided between the first light reflecting layer and the first buffer layer, and includes a second buffer layer made of an arsenic semiconductor layer containing zinc or magnesium as an impurity.
  • the method for manufacturing the first light emitting device includes a first buffer layer made of a phosphorus-based semiconductor layer, a second buffer layer made of an arsenic-based semiconductor layer containing zinc or magnesium as an impurity, and as an impurity.
  • a first light-reflecting layer, an active layer, and a second light-reflecting layer made of an arsenic-based semiconductor layer containing carbon are formed in this order by crystal growth, and then the first buffer layer is used as an etching stop layer and the first is etched.
  • the light-reflecting layer, the active layer, and the second light-reflecting layer are separated into a plurality of pieces to form a plurality of semiconductor laminates.
  • the method for manufacturing the second light emitting device includes a second light reflecting layer, an active layer, a first light reflecting layer composed of an arsenic semiconductor layer containing carbon as an impurity, and zinc or magnesium as an impurity.
  • a second buffer layer composed of an arsenic-based semiconductor layer containing arsenic and a first buffer layer composed of a phosphorus-based semiconductor layer are formed in this order by crystal growth, and then the first buffer layer is used as an etching stop layer to form a light emitting surface.
  • carbon is used as an impurity constituting the semiconductor laminate.
  • a second buffer layer made of an arsenic semiconductor layer containing zinc or magnesium as an impurity is provided between the first light reflecting layer made of the arsenic semiconductor layer containing the arsenic semiconductor layer and the first buffer layer made of the phosphorus semiconductor layer. I tried to provide it. As a result, deterioration of the surface state of the crystal growth surface due to contact between the carbon raw material contained as an impurity in the first light reflecting layer and the phosphorus-based semiconductor is suppressed.
  • FIG. 5 is a block diagram showing an example of a schematic configuration of a distance measuring device using the lighting device provided with the semiconductor laser shown in FIG. 1 and the like.
  • the second embodiment (the second embodiment made of a Zn or Mg-doped arsenic semiconductor between the first reflective layer made of a C-doped arsenic semiconductor and the first buffer layer made of a phosphorus-based semiconductor layer.
  • FIG. 1 schematically shows an example of a cross-sectional configuration of a light emitting device (semiconductor laser 1) according to the first embodiment of the present disclosure.
  • the semiconductor laser 1 is, for example, a back-emission type vertical cavity surface emission laser (VCSEL), for example, a plurality of VCSELs are integrated in an array as a plurality of light emitting regions. ..
  • VCSEL back-emission type vertical cavity surface emission laser
  • the semiconductor laser 1 has, for example, a plurality of semiconductor laminates 10 on the first surface (surface (surface 11S1)) of the substrate 11.
  • the semiconductor laminate 10 has, for example, a columnar shape (mesa shape), and for example, the first light reflecting layer 14, the active layer 15, and the second light reflecting layer 16 are laminated in this order.
  • a current constriction layer 17 forming a current injection region 17A is provided between the first light reflection layer 14 and the active layer 15.
  • the semiconductor laminate 10 corresponds to a specific example of the "semiconductor laminate" of the present disclosure.
  • the first contact layer 12 and the buffer layer 13 are laminated in order from the substrate side between the semiconductor laminate 10 and the substrate 11, and the buffer layer 13 is, for example, the first layer 13A, the second layer 13B, and the first layer 13.
  • the three layers 13C have a multi-layer structure in which the three layers 13C are laminated in this order from the first contact layer 12 side, and form a mesa shape together with the semiconductor laminate 10.
  • the first contact layer 12 extends on the substrate 11 as a common layer for the plurality of semiconductor laminates 10.
  • a first electrode 21 is provided on the first contact layer 12 as a common electrode for each semiconductor laminate 10.
  • a second contact layer 18 and a second electrode 22 are formed on the upper surface (surface 10S1) of each semiconductor laminate 10 in this order, respectively.
  • the substrate 11 is a support substrate on which a plurality of semiconductor laminates 10 are integrated.
  • a semi-insulating substrate which does not contain impurities, for example, which is composed of, for example, a GaAs-based semiconductor.
  • the substrate 11 may have a low carrier concentration and a reduced absorption of laser light, and has, for example, a p-type or n-type carrier concentration of 5 ⁇ 10 17 cm -3 or less.
  • a substrate can be used.
  • the first contact layer 12 is made of, for example, a GaAs-based semiconductor.
  • the first contact layer 12 is for electrically connecting the first electrode 21 and the first light reflecting layer 14 of each semiconductor laminate 10.
  • the first contact layer 12 is made of p-type GaAs and contains, for example, carbon (C) as an impurity.
  • the first contact layer 12 corresponds to a specific example of the “first contact layer” of the present disclosure.
  • the buffer layer 13 has a multilayer structure in which the first layer 13A, the second layer 13B, and the third layer 13C are laminated in this order from the first contact layer 12 side.
  • the first layer 13A is composed of, for example, an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity.
  • the second layer 13B is composed of, for example, a phosphorus-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity.
  • the third layer 13C is composed of, for example, an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity.
  • the arsenic-based semiconductor layer is a layer containing a compound semiconductor containing at least arsenic (As), and examples thereof include a GaAs layer, an AlGaAs layer, and an AlAs layer.
  • the first layer 13A and the third layer 13C correspond to a specific example of the "second buffer layer" of the present disclosure, and are a single-layer film or a laminate composed of any one layer or two or more layers of the above semiconductor layers. It can be formed as a film.
  • the film thickness of the first layer 13A and the third layer 13C in the stacking direction (hereinafter, simply referred to as thickness) is, for example, 5 nm or more and 100 nm or less.
  • the phosphorus-based semiconductor layer is a layer containing a compound semiconductor containing at least phosphorus (P), and examples thereof include a GaInP layer, an AlGaInP layer, and an AlInP layer.
  • the second layer 13B corresponds to a specific example of the "first buffer layer" of the present disclosure, and is formed as a single-layer film or a laminated film composed of any one layer or two or more layers of the above semiconductor layers. Can be done.
  • the thickness of the second layer 13B is, for example, 50 nm or more and 300 nm or less.
  • the first light reflecting layer 14 is arranged between the buffer layer 13 and the current constriction layer 17, and faces the second light reflection layer 16 with the active layer 15 and the current constriction layer 17 in between.
  • the first light reflecting layer 14 resonates the light generated in the active layer 15 with the second light reflecting layer 16.
  • the first light reflecting layer 14 corresponds to a specific example of the "first light reflecting layer" of the present disclosure.
  • the first light reflecting layer 14 is a DBR (Distributed Bragg Reflector) layer in which low refractive index layers (not shown) and high refractive index layers (not shown) are alternately laminated.
  • the low refractive index layer is composed of, for example, a p-type Al x1 Ga 1-x1 As (0 ⁇ x1 ⁇ 1) having an optical thickness of ⁇ ⁇ 1 / 4n
  • the high refractive index layer is, for example, an optical thickness of ⁇ ⁇ . It is composed of 1 / 4n p-type Al x2 Ga 1-x2 As (0 ⁇ x2 ⁇ x1).
  • ⁇ is the oscillation wavelength of the laser beam emitted from each light emitting region
  • n is the refractive index.
  • the first light reflecting layer 14 contains, for example, carbon (C) as an impurity.
  • the active layer 15 is provided between the first light reflecting layer 14 and the second light reflecting layer 16.
  • the active layer 15 is made of, for example, an aluminum gallium arsenide (AlGaAs) -based semiconductor material.
  • AlGaAs aluminum gallium arsenide
  • holes and electrons injected from the first electrode 21 and the second electrode 22 are luminescent and recombinated to generate stimulated emission light.
  • the region of the active layer 15 facing the current injection region 17A is the light emitting region.
  • the active layer 15 for example, undoped Al x3 Ga 1-x3 As (0 ⁇ x3 ⁇ 0.45) can be used.
  • the active layer 15 may have, for example, a Multi Quantum Well (MQW) structure of GaAs and AlGaAs.
  • the active layer 15 may be formed by a multiple quantum well structure of indium gallium arsenic (InGaAs) and AlGaAs.
  • the active layer 15 corresponds to a specific example of the “active layer
  • the second light reflecting layer 16 is a DBR layer arranged between the active layer 15 and the second contact layer 18.
  • the second light reflecting layer 16 faces the first light reflecting layer 14 with the active layer 15 and the current constriction layer 17 in between.
  • the second light reflecting layer 16 corresponds to a specific example of the "second light reflecting layer" of the present disclosure.
  • the second light reflecting layer 16 has a laminated structure in which low refractive index layers and high refractive index layers are alternately laminated.
  • the low refractive index layer is, for example, an n-type Al x4 Ga 1-x4 As (0 ⁇ x4 ⁇ 1) having an optical film thickness of ⁇ / 4n.
  • the high refractive index layer is, for example, an n-type Al x5 Ga 1-x5 As (0 ⁇ x5 ⁇ x4) having an optical film thickness of ⁇ / 4n.
  • the second light reflecting layer 16 contains, for example, silicon (Si) as an impurity.
  • the current constriction layer 17 is provided between the first light reflecting layer 14 and the active layer 15, and is formed in an annular shape having a predetermined width from the outer peripheral side to the inner side of the semiconductor laminate 10 having a mesa shape, for example. ing.
  • the current constriction layer 17 is provided between the first light reflection layer 14 and the active layer 15, and has an opening having a predetermined width in the central portion thereof, and this opening becomes the current injection region 17A.
  • the current constriction layer 17 is made of, for example, p-type AlGaAs.
  • the current constriction layer 17 is composed of Al 0.85 Ga 0.15 As to Al As, and by oxidizing this to form an aluminum oxide (AlO x ) layer, the current is constricted.
  • AlO x aluminum oxide
  • the semiconductor laser 1 by providing the current constriction layer 17, the current to be injected from the first electrode 21 into the active layer 15 is constricted, and the current injection efficiency is improved.
  • the second contact layer 18 is made of, for example, a GaAs-based semiconductor having conductivity.
  • the second contact layer 18 is made of, for example, an n-type GaAs, and contains, for example, silicon (Si) as an impurity.
  • the second contact layer 18 corresponds to a specific example of the "second contact layer" of the present disclosure.
  • the first electrode 21 is provided on the first contact layer 12, and is formed of, for example, a multilayer film of titanium (Ti) / platinum (Pt) / gold (Au), for example.
  • the second electrode 22 is provided above the semiconductor laminate 10, specifically, on the second contact layer 18, and is, for example, a gold-germanium (Au-Ge) / nickel (Ni) / gold (Au) multilayer film. Is formed by.
  • the insulating film 23 is formed continuously, for example, on the upper surface of the second contact layer 18, the second contact layer 18, the side surfaces of the semiconductor laminate 10 and the buffer layer 13, and the upper surface (surface 12S1) of the first contact layer 12. There is.
  • the insulating film 23 is made of a single-layer film or a laminated film such as silicon nitride (SiN) or silicon oxide (SiO 2).
  • An opening 23H (see, for example, FIG. 2D) is provided at a predetermined position on the upper surface of each of the second contact layers 18 and the first contact layer 12 of the insulating film 23, and the first electrode 21 is provided in each opening 23H.
  • the second electrode 22 is embedded.
  • the insulating film 24 is formed on the back surface (surface 11S2) of the substrate 11, for example, the entire surface.
  • the insulating film 24 is made of a single-layer film or a laminated film such as silicon nitride (SiN) or silicon oxide (SiO 2).
  • the plurality of semiconductor laminates 10 provided on the substrate 11 and the first electrode 21 are electrically connected to each other by a first contact layer 12 formed of, for example, p-type GaAs. It is a semiconductor laser having a so-called common anode structure connected to.
  • the semiconductor laser 1 when a predetermined voltage is applied to the first electrode 21 and the second electrode 22, a voltage is applied to the semiconductor laminate 10 from the first electrode 21 and the second electrode 22. As a result, electrons are injected from the first electrode 21 and holes are injected into the active layer 15 from the second electrode 22, and light is generated by recombination of the electrons and holes. The light resonates between the first light reflecting layer 14 and the second light reflecting layer 16 and is amplified, and the laser beam L is emitted from the back surface (surface 11S2) of the substrate 11.
  • the first contact layer 12, the buffer layer 13, and the first contact layer 12 are formed on the substrate 11 by an epitaxial crystal growth method such as a metal organic chemical vapor deposition (MOCVD) method.
  • MOCVD metal organic chemical vapor deposition
  • Each compound semiconductor layer constituting the light reflecting layer 14, the active layer 15, the second light reflecting layer 16 and the second contact layer 18 is formed in this order to prepare an epiwafer.
  • methyl-based organic metal compounds such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn) and arsine (AsH 3 ) gas are used.
  • a donor impurity for example, disilane (Si 2 H 6), as the material of an acceptor impurity is, e.g., carbon tetrabromide (CBr 4).
  • CBr 4 carbon tetrabromide
  • phosphorus-based semiconductors for example, AlGaInP
  • TMAl methylaluminum
  • TMGa trimethylgallium
  • TMIn trimethylindium
  • PH 3 phosphine
  • disilane Si 2 H 6
  • acceptor impurities for example, dimethylzinc (DMZn) or cyclopentadienyl magnesium (Cp 2 Mg) is used.
  • DMZn dimethylzinc
  • Cp 2 Mg cyclopentadienyl magnesium
  • the second contact layer 18 and the second contact layer 18 and the second contact layer 18 use this resist film as a mask.
  • the light reflecting layer 16, the active layer 15, and the first light reflecting layer 14 are etched to form a columnar mesa structure (semiconductor laminate 10).
  • RIE reactive Ion Etching
  • Cl-based gas Cl-based gas
  • an oxide layer having a high aluminum (Al) composition for example, an AlGaAs layer, which has been laminated in advance during epi-growth, is oxidized and the current is narrowed (current narrowing layer 17). To form.
  • Al aluminum
  • the second layer 13B and the first layer 13A of the buffer layer 13 are removed by etching to expose the first contact layer 12.
  • the insulating film 24 is formed.
  • the first electrode 21 and the second electrode 22 are formed on the first contact layer 12 and the second contact layer 18, respectively.
  • the insulating films 23 and 24 are formed by, for example, a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.
  • the insulating film 23 is formed so as to cover the entire upper surface (surface 12S1) of the first contact layer 12 exposed by etching from the upper surface of the second contact layer 18, and then a resist film (surface 12S1) having a predetermined pattern is formed on the insulating film 23. (Not shown) is formed into a pattern, and etching such as RIE is performed to form an opening 23H at a predetermined position. Then, for example, a lift-off method using a resist pattern is used to form a pattern of the first electrode 21 and the second electrode 22 on the first contact layer 12 and on the upper surface of the second contact layer 18, respectively. As a result, the semiconductor laser 1 shown in FIG. 1 is completed.
  • the semiconductor laser 1 of the present embodiment includes a first light reflecting layer 14 made of an arsenic-based semiconductor layer containing carbon (C) as an impurity, and a second layer 13B made of a phosphorus-based semiconductor layer constituting the buffer layer 13.
  • a third layer 13C made of an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity is provided between them.
  • the acceptor impurities for example, carbon tetrabromide (CBr 4 )
  • CBr 4 carbon tetrabromide
  • a p-type InGaP layer doped with zinc (Zn) as an impurity is formed between the p-type DBR and the ohmic contact layer made of p-type GaAs, and this is used as an etching stop layer.
  • Zn zinc
  • the ohmic contact layer made of p-type DBR and p-type GaAs is doped with carbon (C) as an impurity.
  • the MOCVD method is generally used for crystal growth of semiconductor lasers including surface emitting lasers, but when carbon (C) is doped in the MOCVD method, carbon tetrabromide (CBr 4 ), bromine chloride (BrCl 3 ), etc. are used. Used as a raw material. For example, when carbon tetrabromide (CBr 4 ) is used, bromine (Br) is generated by thermal decomposition, for example, during crystal growth of p-type DBR. A part of the generated bromine (Br) remains in the reactor due to the memory effect.
  • the bromine (Br) remaining in the reactor easily reacts with the phosphorus-based semiconductor to be crystal-grown next, that is, the InGaP layer, which deteriorates the surface state (for example, flatness) of the InGaP layer and the surface of the InGaP layer.
  • crystal defects and dust caused by the reactants may be generated, which may cause deterioration of device characteristics and a decrease in manufacturing yield.
  • the present embodiment as an impurity between the first light reflecting layer 14 made of an arsenic-based semiconductor layer containing carbon (C) as an impurity and the second layer 13B made of a phosphorus-based semiconductor layer.
  • the third layer 13C made of an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) is provided.
  • Zn zinc
  • Mg magnesium
  • deterioration of the surface state of the crystal growth surface due to contact between the C-doped material such as carbon tetrabromide (CBr 4) and the second layer 13B made of a phosphorus-based semiconductor is suppressed.
  • the third layer 13C composed of an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity is used as an arsenic-based semiconductor layer containing carbon (C) as an impurity. Since it is provided between the first light reflecting layer 14 made of a semiconductor layer and the second layer 13B made of a phosphorus-based semiconductor layer, the surface state of the crystal growth surface due to the contact between the C-doped material and the phosphorus-based semiconductor is maintained. Deterioration is suppressed, and a phosphorus-based semiconductor layer (second layer 13B) and an epi layer having excellent flatness are formed above the layer. Therefore, it is possible to improve the device characteristics and the manufacturing yield of the surface emitting laser.
  • Zn zinc
  • Mg magnesium
  • the first contact layer 12 is composed of a GaAs-based semiconductor containing carbon (C) as an impurity
  • the first contact layer 12 and the second layer 13B composed of the phosphorus-based semiconductor layer are used.
  • a first layer 13A made of an arsenic-based semiconductor layer containing zinc (Zn) or magnesium (Mg) as an impurity is also provided between the layers.
  • FIG. 3 schematically shows an example of the cross-sectional configuration of the light emitting device (semiconductor laser 2) according to the second embodiment of the present disclosure.
  • the semiconductor laser 2 is, for example, a surface emitting type vertical cavity surface emitting LASER (VCSEL), for example, a plurality of VCSELs are integrated in an array as a plurality of light emitting regions. ..
  • VCSEL surface emitting type vertical cavity surface emitting LASER
  • the semiconductor laser 2 has, for example, a plurality of semiconductor laminates 10 having a columnar shape (mesa shape) in part on the first surface (surface (surface 11S1)) of the substrate 11.
  • the semiconductor laminate 10 of the present embodiment for example, the second light reflecting layer 16, the active layer 15, and the first light reflecting layer 14 are laminated in this order, and the first light reflecting layer 14 and the active layer 15 are combined.
  • a current constriction layer 17 forming a current injection region 17A is provided between them.
  • a second contact layer 18 is provided between the semiconductor laminate 10 and the substrate 11, and a buffer layer 13 and a first contact layer 12 are laminated in this order on the upper surface of each semiconductor laminate 10. ..
  • the third layer 13C, the second layer 13B, and the first layer 13A are laminated in this order from the semiconductor laminate 10 side.
  • a part of the second contact layer 18 and the second light reflecting layer 16 extends on the substrate 11 as a common layer for the plurality of semiconductor laminates 10.
  • an opening H serving as a light emitting surface is formed in the first contact layer 12 above the current injection region 17A and the first layer 13A constituting the buffer layer 13, and the first contact around the opening H is formed.
  • the first electrode 21 is provided on the layer 12.
  • the second electrode 22 is provided on the back surface (surface 11S2) of the substrate 11 as a common electrode for the plurality of semiconductor laminates 10.
  • the upper surface (surface 16S1) of the second light reflecting layer 16 common to the body 10 is covered with one insulating film 23.
  • the semiconductor laser 2 can be manufactured, for example, as follows.
  • the second contact layer 18, the second light reflecting layer 16, the active layer 15, and the first light reflecting layer 14 are placed on the substrate 11 by, for example, an epitaxial crystal growth method such as the MOCVD method.
  • Each compound semiconductor layer constituting the buffer layer 13 and the first contact layer 12 is formed in this order to prepare an epiwafer, and then etched to the second light reflection layer 16 to form a columnar mesa structure (semiconductor laminate 10). do.
  • an AlGaAs layer having a high aluminum (Al) composition laminated in advance during epi-growth is oxidized to narrow the current.
  • An oxide layer (current constriction layer 17) is formed.
  • the first contact layer 12 and the first layer 13A above the current injection region 17A were selectively removed by, for example, wet etching, using the second layer 13B as the etching stop layer.
  • An opening H is formed in which the bottom surface serves as a light emitting surface.
  • an insulating film 23 continuous from the side surface and the bottom surface of the opening H and the upper surface of the first contact layer 12 around the opening H to the upper surface (surface 16S1) of the second light reflecting layer 16 is formed.
  • the first electrode 21 and the second electrode 22 are formed on the upper surface of the first contact layer 12 and the back surface (surface 11S2) of the substrate 11, respectively.
  • the insulating film 23 covers the entire upper surface (surface 16S1) of the second light reflecting layer 16 from the side surface and the bottom surface of the opening H and the upper surface of the first contact layer 12 around the opening H by, for example, the CVD method or the ALD method.
  • a resist film (not shown) having a predetermined pattern is formed into a pattern, and an opening is formed on the first contact layer 12 by etching such as RIE. Then, for example, a lift-off method using a resist pattern is used to form a pattern of the first electrode 21 on the first contact layer 12. As a result, the semiconductor laser 2 shown in FIG. 3 is completed.
  • a third layer 13C made of an arsenic-based semiconductor layer containing (Zn) or magnesium (Mg) is provided.
  • Layer 13A is provided. Even in the surface emitting type semiconductor laser 2 having such a configuration, the same effect as that of the first embodiment can be obtained. That is, it is possible to improve the device characteristics and the manufacturing yield of the surface emitting laser.
  • the substrate 11 is not limited to the semi-insulating substrate described in the first embodiment.
  • a general gallium arsenide (GaAs) substrate may be used.
  • the substrate 11 is made of indium phosphide (InP), gallium nitride (GaN), silicon (Si), silicon carbide (SiC), or the like, depending on the material system of the light emitting device, the bonding process of different types of substrates, and the like. You may.
  • This technology can be applied to various electronic devices including semiconductor lasers.
  • it can be applied to a light source provided in a portable electronic device such as a smartphone, a light source of various sensing devices for detecting a shape, an operation, or the like.
  • FIG. 5 is a block diagram showing a schematic configuration of a distance measuring device (distance measuring device 200) using the lighting device 100 provided with the semiconductor laser 1 described above.
  • the distance measuring device 200 measures the distance by the ToF method.
  • the distance measuring device 200 includes, for example, a lighting device 100, a light receiving unit 210, a control unit 220, and a distance measuring unit 230.
  • the lighting device 100 includes, for example, the semiconductor laser 1 shown in FIG. 1 or the like as a light source.
  • illumination light is generated in synchronization with the emission control signal CLKp of a square wave.
  • the light emission control signal CLKp is not limited to a square wave as long as it is a periodic signal.
  • the light emission control signal CLKp may be a sine wave.
  • the light receiving unit 210 receives the reflected light reflected from the irradiation target object 300, and detects the amount of light received within the period of the vertical synchronization signal VSYNC each time the period of the vertical synchronization signal VSYNC elapses.
  • a 60 Hz (Hz) periodic signal is used as the vertical sync signal VSYNC.
  • a plurality of pixel circuits are arranged in a two-dimensional lattice pattern in the light receiving unit 210.
  • the light receiving unit 210 supplies image data (frames) corresponding to the amount of light received by these pixel circuits to the distance measuring unit 230.
  • the frequency of the vertical synchronization signal VSYNC is not limited to 60 hertz (Hz), and may be 30 hertz (Hz) or 120 hertz (Hz).
  • the control unit 220 controls the lighting device 100.
  • the control unit 220 generates a light emission control signal CLKp and supplies it to the lighting device 100 and the light receiving unit 210.
  • the frequency of the light emission control signal CLKp is, for example, 20 MHz (MHz).
  • the frequency of the light emission control signal CLKp is not limited to 20 MHz (MHz), and may be, for example, 5 MHz (MHz).
  • the distance measuring unit 230 measures the distance to the irradiation target 300 by the ToF method based on the image data.
  • the distance measuring unit 230 measures the distance for each pixel circuit and generates a depth map showing the distance to the object for each pixel as a gradation value. This depth map is used, for example, for image processing that performs a degree of blurring processing according to a distance, autofocus (AF) processing that obtains the in-focus of a focus lens according to a distance, and the like.
  • AF autofocus
  • the present technology has been described above with reference to the first and second embodiments and application examples, the present technology is not limited to the above-described embodiments and can be modified in various ways.
  • the layer structure of the semiconductor lasers 1 and 2 described in the first embodiment and the like is an example, and other layers may be further provided.
  • the material of each layer is also an example, and is not limited to the above-mentioned ones.
  • the first contact layer 12 contains carbon (C) as an impurity (dopant)
  • the dopant of the first contact layer 12 is not limited to carbon (C).
  • the first contact layer 12 may contain zinc (Zn) or the like as a dopant, similarly to the buffer layer 13. In that case, the first layer 13A of the buffer layer 13 in contact with the first contact layer 12 may be omitted.
  • the first contact layer 12, the buffer layer 13, the first light reflecting layer 14, the active layer 15, the second light reflecting layer 16 and the second contact layer 18 are formed on the substrate 11.
  • a back-emission type semiconductor laser semiconductor laser 1 having a common anode structure, which is laminated in order, is shown as an example, but the present invention is not limited to this.
  • the semiconductor laser 1 has a second contact layer 18, a second light reflecting layer 16, an active layer 15, a first light reflecting layer 14, and a buffer from the substrate 11 side, like the semiconductor laser 2 of the second embodiment.
  • the layer 13 and the first contact layer 12 may be laminated in this order to form a backside emitting type semiconductor laser having a so-called common cathode structure.
  • the first contact layer 12, the buffer layer 13, and the first light reflecting layer 14 are arranged in this order from the substrate 11 side.
  • the active layer 15, the second light reflecting layer 16 and the second contact layer 18 may be laminated.
  • the present technology can be configured as follows. According to the present technology having the following configuration, between the first light reflecting layer made of an arsenic-based semiconductor layer containing carbon as an impurity and the first buffer layer made of a phosphorus-based semiconductor layer constituting the semiconductor laminate. A second buffer layer made of an arsenic-based semiconductor layer containing zinc or magnesium as an impurity was provided in the water. As a result, deterioration of the surface state of the crystal growth surface due to contact between the carbon raw material contained as an impurity in the first light reflecting layer and the phosphorus-based semiconductor can be suppressed, and the stability of device characteristics and the manufacturing yield can be improved. It will be possible.
  • a semiconductor laminate in which a first light-reflecting layer, an active layer, and a second light-reflecting layer composed of an arsenic-based semiconductor layer containing carbon as an impurity are laminated, and A first phosphorus-based semiconductor layer provided on the first light-reflecting layer side of the semiconductor laminate and having one surface facing the semiconductor laminate and another surface opposite to the one surface.
  • Buffer layer and A light emitting device including at least a second buffer layer provided between the first light reflecting layer and the first buffer layer and composed of an arsenic-based semiconductor layer containing zinc or magnesium as an impurity.
  • the arsenic-based semiconductor layer is a single-layer film or a laminated film composed of any one layer or two or more layers of a GaAs layer, an AlGaAs layer, and an AlAs layer.
  • the phosphorus-based semiconductor layer is a single-layer film or a laminated film composed of any one layer or two or more layers of a GaInP layer, an AlGaInP layer, and an AlInP layer. ..
  • the first contact layer is composed of an arsenic-based semiconductor layer containing carbon as an impurity.
  • the semiconductor laminate is one of (1) to (5), wherein the first light-reflecting layer, the active layer, and the second light-reflecting layer are laminated in this order from the substrate side.
  • One of the light emitting devices (8) The semiconductor laminate according to any one of (1) to (7) above, further comprising a current constriction layer having a current injection region between the first light reflecting layer and the active layer. Luminous device. (9) The light emitting device according to any one of (1) to (8) above, further comprising a second contact layer on the side of the second light reflecting layer of the semiconductor laminate. (10) The light emitting device according to any one of (1) to (9) above, further comprising a first electrode and a second electrode provided so as to be able to apply a predetermined voltage to the semiconductor laminate. ..
  • the substrate is a semi-insulating substrate having a p-type or n-type carrier concentration of 5 ⁇ 10 17 cm -3 or less.
  • the semiconductor laminate emits a laser beam above the semiconductor laminate.
  • a first contact layer is formed under the first buffer layer before crystal growth of the first buffer layer and the second buffer layer.
  • the first buffer layer, the second buffer layer, the first light reflecting layer, the active layer and the second light reflecting layer are continuously formed by the metalorganic vapor phase growth method (14). ) Or (15). The method for manufacturing a light emitting device.

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