DE112019005789T5 - Festkörperbildgebungsvorrichtung und elektronische Einrichtung - Google Patents

Festkörperbildgebungsvorrichtung und elektronische Einrichtung Download PDF

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Publication number
DE112019005789T5
DE112019005789T5 DE112019005789.8T DE112019005789T DE112019005789T5 DE 112019005789 T5 DE112019005789 T5 DE 112019005789T5 DE 112019005789 T DE112019005789 T DE 112019005789T DE 112019005789 T5 DE112019005789 T5 DE 112019005789T5
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Germany
Prior art keywords
imaging device
state imaging
semiconductor layer
film thickness
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112019005789.8T
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German (de)
English (en)
Inventor
Shogo FURUYA
Yorito Sakano
Ryo Takahashi
Atsushi Suzuki
Ryoichi Yoshikawa
Jun Suenaga
Shinichi Koga
Yohei Chiba
Tadamasa Shioyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112019005789T5 publication Critical patent/DE112019005789T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112019005789.8T 2018-11-19 2019-11-19 Festkörperbildgebungsvorrichtung und elektronische Einrichtung Pending DE112019005789T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018216342 2018-11-19
JP2018-216342 2018-11-19
JP2019-206785 2019-11-15
JP2019206785 2019-11-15
PCT/JP2019/045276 WO2020105634A1 (ja) 2018-11-19 2019-11-19 固体撮像装置および電子機器

Publications (1)

Publication Number Publication Date
DE112019005789T5 true DE112019005789T5 (de) 2021-09-02

Family

ID=70773125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112019005789.8T Pending DE112019005789T5 (de) 2018-11-19 2019-11-19 Festkörperbildgebungsvorrichtung und elektronische Einrichtung

Country Status (7)

Country Link
US (1) US12490529B2 (https=)
JP (1) JP7520721B2 (https=)
KR (1) KR102861849B1 (https=)
CN (1) CN112970117A (https=)
DE (1) DE112019005789T5 (https=)
TW (1) TWI835928B (https=)
WO (1) WO2020105634A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4084090B1 (en) * 2019-12-25 2024-10-09 Sony Semiconductor Solutions Corporation Light-receiving element and light-receiving device
WO2022059132A1 (ja) * 2020-09-17 2022-03-24 キオクシア株式会社 半導体記憶装置
JP2023182872A (ja) 2020-11-12 2023-12-27 ソニーグループ株式会社 固体撮像素子およびその製造方法
JP2023064358A (ja) * 2021-10-26 2023-05-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2023172505A (ja) * 2022-05-24 2023-12-06 キヤノン株式会社 光電変換装置
JP2024029309A (ja) * 2022-08-22 2024-03-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
JP2019206785A (ja) 2018-05-30 2019-12-05 三菱瓦斯化学株式会社 漂白パルプの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349259A (ja) * 1999-06-09 2000-12-15 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100738516B1 (ko) * 2006-05-25 2007-07-11 (주) 픽셀플러스 커플링 캐패시터를 사용하는 핀드 포토다이오드를 포함하는액티브 픽셀 및 그의 신호 감지 방법
JP2009283552A (ja) * 2008-05-20 2009-12-03 Panasonic Corp 固体撮像素子
JP4862878B2 (ja) * 2008-10-30 2012-01-25 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP2012129799A (ja) * 2010-12-15 2012-07-05 Sony Corp 固体撮像素子および駆動方法、並びに電子機器
JP5970834B2 (ja) * 2012-02-02 2016-08-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
US9490373B2 (en) 2012-02-02 2016-11-08 Sony Corporation Solid-state imaging device and electronic apparatus with improved storage portion
CN103258829A (zh) * 2012-02-16 2013-08-21 索尼公司 固态成像装置、图像传感器及其制造方法以及电子设备
JP2017004985A (ja) * 2013-11-08 2017-01-05 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP6319426B2 (ja) 2014-03-31 2018-05-09 株式会社ニコン 検出装置、電子機器および製造方法
CN108807434B (zh) * 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
JP2019206785A (ja) 2018-05-30 2019-12-05 三菱瓦斯化学株式会社 漂白パルプの製造方法

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Publication number Publication date
JPWO2020105634A1 (ja) 2021-09-30
WO2020105634A1 (ja) 2020-05-28
JP7520721B2 (ja) 2024-07-23
TWI835928B (zh) 2024-03-21
KR102861849B1 (ko) 2025-09-22
TW202029489A (zh) 2020-08-01
US20220013557A1 (en) 2022-01-13
US12490529B2 (en) 2025-12-02
KR20210093859A (ko) 2021-07-28
CN112970117A (zh) 2021-06-15

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