DE112018002101T5 - Halbleitermodul und Leistungswandlergerät - Google Patents

Halbleitermodul und Leistungswandlergerät Download PDF

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Publication number
DE112018002101T5
DE112018002101T5 DE112018002101.7T DE112018002101T DE112018002101T5 DE 112018002101 T5 DE112018002101 T5 DE 112018002101T5 DE 112018002101 T DE112018002101 T DE 112018002101T DE 112018002101 T5 DE112018002101 T5 DE 112018002101T5
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Germany
Prior art keywords
emitter
semiconductor switching
switching element
current
electrode
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Pending
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DE112018002101.7T
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German (de)
English (en)
Inventor
Shota Morisaki
Yoshiko Tamada
Junichi Nakashima
Daisuke Oya
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE112018002101T5 publication Critical patent/DE112018002101T5/de
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H—ELECTRICITY
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    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristors (AREA)
DE112018002101.7T 2017-04-19 2018-04-11 Halbleitermodul und Leistungswandlergerät Pending DE112018002101T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-083088 2017-04-19
JP2017083088 2017-04-19
PCT/JP2018/015198 WO2018193929A1 (ja) 2017-04-19 2018-04-11 半導体モジュールおよび電力変換装置

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Publication Number Publication Date
DE112018002101T5 true DE112018002101T5 (de) 2020-02-20

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DE112018002101.7T Pending DE112018002101T5 (de) 2017-04-19 2018-04-11 Halbleitermodul und Leistungswandlergerät

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Country Link
US (1) US11271043B2 (ja)
JP (1) JP6912560B2 (ja)
CN (1) CN110495087B (ja)
DE (1) DE112018002101T5 (ja)
WO (1) WO2018193929A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021112410A1 (de) 2021-05-12 2022-11-17 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Substrat, Leistungshalbleiterbauelementen und mit einer Gleichspannungsanschlusseinrichtung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020174535A1 (ja) * 2019-02-25 2020-09-03 三菱電機株式会社 回路基板、半導体装置、電力変換装置及び移動体
CN110495187B (zh) * 2019-06-24 2021-10-08 深圳东原电子有限公司 一种并联式超薄扬声器及其装配方法
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