DE112017001040T8 - Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung - Google Patents

Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung Download PDF

Info

Publication number
DE112017001040T8
DE112017001040T8 DE112017001040.3T DE112017001040T DE112017001040T8 DE 112017001040 T8 DE112017001040 T8 DE 112017001040T8 DE 112017001040 T DE112017001040 T DE 112017001040T DE 112017001040 T8 DE112017001040 T8 DE 112017001040T8
Authority
DE
Germany
Prior art keywords
production
photonic crystal
emitting laser
dimensional photonic
dimensional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112017001040.3T
Other languages
English (en)
Other versions
DE112017001040T5 (de
Inventor
Susumu Noda
Yoshinori Tanaka
Menaka DE ZOYSA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Hamamatsu Photonics KK
Mitsubishi Electric Corp
Kyoto University NUC
Original Assignee
Rohm Co Ltd
Hamamatsu Photonics KK
Mitsubishi Electric Corp
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Hamamatsu Photonics KK, Mitsubishi Electric Corp, Kyoto University NUC filed Critical Rohm Co Ltd
Publication of DE112017001040T5 publication Critical patent/DE112017001040T5/de
Application granted granted Critical
Publication of DE112017001040T8 publication Critical patent/DE112017001040T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE112017001040.3T 2016-02-29 2017-02-24 Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung Active DE112017001040T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-037876 2016-02-29
JP2016037876 2016-02-29
PCT/JP2017/007184 WO2017150387A1 (ja) 2016-02-29 2017-02-24 ２次元フォトニック結晶面発光レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE112017001040T5 DE112017001040T5 (de) 2018-12-20
DE112017001040T8 true DE112017001040T8 (de) 2019-05-02

Family

ID=59743995

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112017001040.3T Active DE112017001040T8 (de) 2016-02-29 2017-02-24 Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (1) US10461502B2 (de)
JP (1) JP6860175B2 (de)
CN (1) CN108701965B (de)
DE (1) DE112017001040T8 (de)
WO (1) WO2017150387A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10389088B2 (en) * 2015-03-13 2019-08-20 Hamamatsu Photonics K.K. Semiconductor light emitting element
JP7036567B2 (ja) * 2017-10-20 2022-03-15 浜松ホトニクス株式会社 半導体発光素子
JP7103817B2 (ja) * 2018-03-29 2022-07-20 浜松ホトニクス株式会社 半導体発光素子
JP7125327B2 (ja) * 2018-10-25 2022-08-24 浜松ホトニクス株式会社 発光素子及び発光装置
DE102018130560B4 (de) * 2018-11-30 2024-07-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit einer brechungsindexmodulationsschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
JP7306675B2 (ja) * 2019-02-22 2023-07-11 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
US20220271503A1 (en) * 2019-08-30 2022-08-25 Kyoto University Two-dimensional photonic-crystal surface-emitting laser
JP7504368B2 (ja) * 2019-12-16 2024-06-24 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法
WO2021186965A1 (ja) * 2020-03-16 2021-09-23 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法
CN111555115B (zh) * 2020-05-19 2021-05-07 北京工业大学 一种出射相干光的vcsel阵列芯片
CN112496736B (zh) * 2020-11-18 2022-04-15 昆山丘钛微电子科技股份有限公司 一种aa点亮驱动装置及aa机台
US20240047944A1 (en) * 2020-12-18 2024-02-08 Sumitomo Electric Industries, Ltd. Photonic-crystal surface emitting laser and manufacturing method thereof
JPWO2022181722A1 (de) * 2021-02-24 2022-09-01
WO2024024190A1 (ja) * 2022-07-29 2024-02-01 住友電気工業株式会社 フォトニック結晶面発光レーザおよびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561244B2 (ja) * 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 二次元フォトニック結晶面発光レーザ
JP4484134B2 (ja) 2003-03-25 2010-06-16 独立行政法人科学技術振興機構 ２次元フォトニック結晶面発光レーザ
JP4295536B2 (ja) 2003-03-25 2009-07-15 株式会社リコー 画像形成装置
CN100456583C (zh) 2004-03-05 2009-01-28 国立大学法人京都大学 二维光子晶体面发光激光光源
US7257333B2 (en) * 2005-01-06 2007-08-14 Raytheon Company Dynamic control of planck radiation in photonic crystals
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
KR20080049740A (ko) * 2005-09-02 2008-06-04 고쿠리츠 다이가쿠 호진 교토 다이가쿠 2차원 포토닉 결정 면발광 레이저 광원
JP4310297B2 (ja) * 2005-09-05 2009-08-05 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
WO2007029661A1 (ja) 2005-09-05 2007-03-15 Kyoto University ２次元フォトニック結晶面発光レーザ光源
JP4294023B2 (ja) * 2005-12-27 2009-07-08 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP4900572B2 (ja) * 2006-03-20 2012-03-21 国立大学法人京都大学 ２次元フォトニック結晶
JP5147041B2 (ja) * 2006-09-21 2013-02-20 古河電気工業株式会社 フォトニック結晶光素子
JP5072402B2 (ja) 2007-03-26 2012-11-14 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
US9093819B2 (en) * 2010-01-29 2015-07-28 Hewlett-Packard Development Company, L.P. Vertical-cavity surface-emitting lasers with non-periodic gratings
JP5721422B2 (ja) * 2010-12-20 2015-05-20 キヤノン株式会社 面発光レーザ及びアレイ光源
US9748737B2 (en) * 2013-03-07 2017-08-29 Hamamatsu Photonics K.K. Laser element and laser device
CN103259188B (zh) * 2013-05-02 2015-06-24 中国科学院半导体研究所 低发散角单纵模边发射光子晶体激光器

Also Published As

Publication number Publication date
US20190067907A1 (en) 2019-02-28
DE112017001040T5 (de) 2018-12-20
WO2017150387A1 (ja) 2017-09-08
US10461502B2 (en) 2019-10-29
JPWO2017150387A1 (ja) 2018-12-20
CN108701965B (zh) 2020-08-25
CN108701965A (zh) 2018-10-23
JP6860175B2 (ja) 2021-04-14

Similar Documents

Publication Publication Date Title
DE112017001040T8 (de) Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung
MA46916A (fr) Resttumorinfiltrierende lymphozyten und verfahren zur herstellung und verwendung davon
DE112016002417A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112014002391A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
EP3184208A4 (de) System und verfahren zur schellen formung durch bereichsauswahl durch laser mit mehreren wellenlängen
DE112015004443A5 (de) Photonisch integrierter Chip, optisches Bauelement mit photonisch integriertem Chip und Verfahren zu deren Herstellung
GB2542081B (en) Optical Member and Method for Producing Same
DE112015004631A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112017001866A5 (de) Triebradanordnung und Verfahren zur Herstellung einer Triebradanordnung
DE112014001638A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112014004347A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE112015001999A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112017002058A5 (de) Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE112013006065A5 (de) Verfahren zur Herstellung von Halbleiter-Laserelementen und Halbleiter-Laserelement
EP3037855A4 (de) Glasfaser und verfahren zur herstellung davon
SG11201707494RA (en) Optical functional film and method for producing the same
DE112017000332A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112015001351A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
EP3199992A4 (de) Glasfaser und verfahren zur herstellung davon
DE102014107583A8 (de) Verfahren zur Herstellung eines Hohlfasermoduls und Hohlfasermodul
EP3178793A4 (de) Lichtleitfasergrundmaterial und verfahren zur herstellung einer lichtleitfaser
EP3546992A4 (de) Verfahren zur herstellung eines optischen artikels sowie optischer artikel
DE112015003629A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE112015002558A5 (de) Organisches optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE112015001422A5 (de) Aktuator und Verfahren zu deren Herstellung

Legal Events

Date Code Title Description
R082 Change of representative

Representative=s name: HOEGER, STELLRECHT & PARTNER PATENTANWAELTE MB, DE

R012 Request for examination validly filed