DE112015004682B4 - Bonddraht für Halbleitervorrichtung - Google Patents

Bonddraht für Halbleitervorrichtung Download PDF

Info

Publication number
DE112015004682B4
DE112015004682B4 DE112015004682.8T DE112015004682T DE112015004682B4 DE 112015004682 B4 DE112015004682 B4 DE 112015004682B4 DE 112015004682 T DE112015004682 T DE 112015004682T DE 112015004682 B4 DE112015004682 B4 DE 112015004682B4
Authority
DE
Germany
Prior art keywords
wire
mass
concentration
alloy
core material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112015004682.8T
Other languages
German (de)
English (en)
Other versions
DE112015004682T5 (de
Inventor
Daizo Oda
Motoki ETO
Kazuyuki Saito
Teruo Haibara
Ryo Oishi
Takashi Yamada
Tomohiro Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Micrometal Corp
Nippon Steel Chemical and Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Micrometal Corp, Nippon Steel Chemical and Materials Co Ltd filed Critical Nippon Micrometal Corp
Publication of DE112015004682T5 publication Critical patent/DE112015004682T5/de
Application granted granted Critical
Publication of DE112015004682B4 publication Critical patent/DE112015004682B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01565—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07555—Controlling the environment, e.g. atmosphere composition or temperature changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H10W72/523—Multilayered bond wires, e.g. having a coating concentric around a core characterised by the structures of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
DE112015004682.8T 2015-08-12 2015-09-17 Bonddraht für Halbleitervorrichtung Active DE112015004682B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-159692 2015-08-12
JP2015159692 2015-08-12
PCT/JP2015/076487 WO2017026077A1 (ja) 2015-08-12 2015-09-17 半導体装置用ボンディングワイヤ

Publications (2)

Publication Number Publication Date
DE112015004682T5 DE112015004682T5 (de) 2017-07-13
DE112015004682B4 true DE112015004682B4 (de) 2020-07-30

Family

ID=57249634

Family Applications (2)

Application Number Title Priority Date Filing Date
DE112015004682.8T Active DE112015004682B4 (de) 2015-08-12 2015-09-17 Bonddraht für Halbleitervorrichtung
DE112015007271.3T Active DE112015007271B3 (de) 2015-08-12 2015-09-17 Bonddraht für Halbleitervorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE112015007271.3T Active DE112015007271B3 (de) 2015-08-12 2015-09-17 Bonddraht für Halbleitervorrichtung

Country Status (11)

Country Link
US (2) US9887172B2 (https=)
EP (1) EP3157046B1 (https=)
JP (3) JP6002337B1 (https=)
KR (2) KR101758038B1 (https=)
CN (2) CN106463495B (https=)
DE (2) DE112015004682B4 (https=)
MY (2) MY183371A (https=)
PH (2) PH12016502022B1 (https=)
SG (2) SG10201705029XA (https=)
TW (3) TW202111728A (https=)
WO (1) WO2017026077A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106233447A (zh) 2014-04-21 2016-12-14 新日铁住金高新材料株式会社 半导体装置用接合线
US10137534B2 (en) 2015-06-15 2018-11-27 Nippon Micrometal Corporation Bonding wire for semiconductor device
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
DE112015004682B4 (de) * 2015-08-12 2020-07-30 Nippon Micrometal Corporation Bonddraht für Halbleitervorrichtung
JP6452661B2 (ja) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN109564881A (zh) 2017-02-22 2019-04-02 日铁化学材料株式会社 半导体装置用接合线
JP6371932B1 (ja) * 2017-02-22 2018-08-08 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
SG11202001066VA (en) * 2017-08-09 2020-03-30 Nippon Steel Chemical & Material Co Ltd Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
JP6618662B2 (ja) * 2017-08-09 2019-12-11 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
WO2019130570A1 (ja) * 2017-12-28 2019-07-04 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2021098886A (ja) * 2019-12-20 2021-07-01 Ｊｘ金属株式会社 積層造形用金属粉末及び該金属粉末を用いて作製した積層造形物
WO2022130906A1 (ja) * 2020-12-18 2022-06-23 ローム株式会社 半導体装置
CN114932336B (zh) * 2022-05-27 2023-05-23 郑州机械研究所有限公司 一种铜磷锌锡焊片及其制备方法和应用
WO2025135010A1 (ja) * 2023-12-19 2025-06-26 日鉄マイクロメタル株式会社 ボンディングワイヤ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148543A (ja) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2012036490A (ja) 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd ボールボンディング用金被覆銅ワイヤ

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255045A (ja) * 1985-05-07 1986-11-12 Nippon Mining Co Ltd 半導体装置用ボンデイングワイヤ及びその製造方法
JPS62130248A (ja) * 1985-11-29 1987-06-12 Furukawa Electric Co Ltd:The ボンデイング用銅細線
JPS63235440A (ja) * 1987-03-23 1988-09-30 Furukawa Electric Co Ltd:The 銅細線及びその製造方法
JP4868694B2 (ja) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
KR100514312B1 (ko) * 2003-02-14 2005-09-13 헤라우스오리엔탈하이텍 주식회사 반도체 소자용 본딩 와이어
JP4158928B2 (ja) * 2004-09-02 2008-10-01 古河電気工業株式会社 ボンディングワイヤー及びその製造方法
US8610291B2 (en) * 2006-08-31 2013-12-17 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor device
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
JP4705078B2 (ja) 2006-08-31 2011-06-22 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
WO2009014168A1 (ja) * 2007-07-24 2009-01-29 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤおよびワイヤボンディング方法
JP4885117B2 (ja) * 2007-12-03 2012-02-29 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP4617375B2 (ja) * 2007-12-03 2011-01-26 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP5222340B2 (ja) * 2007-12-03 2013-06-26 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
WO2009093554A1 (ja) 2008-01-25 2009-07-30 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤ
JP4349641B1 (ja) 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
SG178063A1 (en) 2009-07-30 2012-03-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JP4637256B1 (ja) * 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
SG10201500542TA (en) 2010-01-27 2015-03-30 Sumitomo Bakelite Co Semiconductor device
JP5550369B2 (ja) 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
JP5616739B2 (ja) * 2010-10-01 2014-10-29 新日鉄住金マテリアルズ株式会社 複層銅ボンディングワイヤの接合構造
JP2012099577A (ja) 2010-10-29 2012-05-24 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
US20130042912A1 (en) * 2011-08-12 2013-02-21 Hitachi Chemical Company, Ltd. Solder bonded body, method of producing solder bonded body, element, photovoltaic cell, method of producing element and method of producing photovoltaic cell
JP5088981B1 (ja) * 2011-12-21 2012-12-05 田中電子工業株式会社 Ｐｄ被覆銅ボールボンディングワイヤ
CN102776408B (zh) 2012-08-16 2014-01-08 烟台一诺电子材料有限公司 一种银合金丝及其制备方法
JP5219316B1 (ja) * 2012-09-28 2013-06-26 田中電子工業株式会社 半導体装置接続用銅白金合金細線
WO2014070795A1 (en) * 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
TWI413702B (zh) * 2013-02-19 2013-11-01 呂傳盛 固相擴散反應銅鈀合金線及其製造方法
JP5668087B2 (ja) 2013-02-22 2015-02-12 田中電子工業株式会社 半導体装置接合用銅希薄ニッケル合金ワイヤの構造
JP5546670B1 (ja) * 2013-06-13 2014-07-09 田中電子工業株式会社 超音波接合用コーティング銅ワイヤの構造
KR101582449B1 (ko) 2013-09-12 2016-01-05 엠케이전자 주식회사 은 합금 본딩 와이어 및 이를 이용한 반도체 장치
KR101668975B1 (ko) * 2014-01-31 2016-10-24 다츠다 덴센 가부시키가이샤 와이어 본딩 및 그 제조 방법
WO2016189752A1 (ja) * 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
DE112015004682B4 (de) * 2015-08-12 2020-07-30 Nippon Micrometal Corporation Bonddraht für Halbleitervorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148543A (ja) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP2012036490A (ja) 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd ボールボンディング用金被覆銅ワイヤ

Also Published As

Publication number Publication date
MY183371A (en) 2021-02-18
DE112015004682T5 (de) 2017-07-13
PH12017501451A1 (en) 2018-05-28
CN106463495B (zh) 2020-09-04
JPWO2017026077A1 (ja) 2017-08-10
PH12016502022A1 (en) 2017-01-09
DE112015007271B3 (de) 2022-10-27
EP3157046B1 (en) 2022-10-26
JP2017038062A (ja) 2017-02-16
JP6002337B1 (ja) 2016-10-05
PH12016502022B1 (en) 2018-06-08
JP2020010067A (ja) 2020-01-16
SG11201608627YA (en) 2017-03-30
US20180122765A1 (en) 2018-05-03
CN106463495A (zh) 2017-02-22
KR102183517B1 (ko) 2020-11-26
SG10201705029XA (en) 2017-07-28
US10121758B2 (en) 2018-11-06
TWI571888B (zh) 2017-02-21
EP3157046A1 (en) 2017-04-19
WO2017026077A1 (ja) 2017-02-16
TW201714186A (zh) 2017-04-16
MY162884A (en) 2017-07-20
JP6605418B2 (ja) 2019-11-13
TW201707009A (zh) 2017-02-16
EP3157046A4 (en) 2017-05-24
KR20170030076A (ko) 2017-03-16
CN111719064B (zh) 2022-03-15
CN111719064A (zh) 2020-09-29
TWI690944B (zh) 2020-04-11
KR101758038B1 (ko) 2017-07-13
US20170194280A1 (en) 2017-07-06
KR20180029946A (ko) 2018-03-21
TW202111728A (zh) 2021-03-16
US9887172B2 (en) 2018-02-06

Similar Documents

Publication Publication Date Title
DE112015004682B4 (de) Bonddraht für Halbleitervorrichtung
DE112015004364B4 (de) Bonddraht für Halbleitervorrichtung
DE112015004422B4 (de) Bonddraht für Halbleitervorrichtung
DE112017008353B3 (de) Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE112015005005B4 (de) Bonddraht für Halbleitervorrichtung
KR101728650B1 (ko) 반도체 장치용 본딩 와이어
KR101670209B1 (ko) 반도체 장치용 본딩 와이어
DE112022002498T5 (de) Bonddraht für Halbleitervorrichtungen
DE112017000346T5 (de) Bonddraht für Halbleiterbauelement
DE112015007265B4 (de) Bonddraht für Halbleitervorrichtung
DE112022001995T5 (de) Bonddraht für Halbleitervorrichtungen
DE112016005747B4 (de) Bonddrähte für eine Halbleitervorrichtung
DE112018000061T5 (de) Bonddraht für Halbleiterbauelement

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021600000

Ipc: H01L0023490000

R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., JP

Free format text: FORMER OWNERS: NIPPON MICROMETAL CORPORATION, IRUMA-SHI, SAITAMA, JP; NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., TOKYO, JP

Owner name: NIPPON MICROMETAL CORPORATION, IRUMA-SHI, JP

Free format text: FORMER OWNERS: NIPPON MICROMETAL CORPORATION, IRUMA-SHI, SAITAMA, JP; NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., TOKYO, JP

R082 Change of representative

Representative=s name: VOSSIUS & PARTNER PATENTANWAELTE RECHTSANWAELT, DE

R018 Grant decision by examination section/examining division
R130 Divisional application to

Ref document number: 112015007271

Country of ref document: DE

R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023490000

Ipc: H10W0072500000