DE112014003479T8 - GaN-Komponente mit verringerter Ausgangskapazität und Verfahren zur Herstellung derselben - Google Patents
GaN-Komponente mit verringerter Ausgangskapazität und Verfahren zur Herstellung derselben Download PDFInfo
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- DE112014003479T8 DE112014003479T8 DE112014003479.7T DE112014003479T DE112014003479T8 DE 112014003479 T8 DE112014003479 T8 DE 112014003479T8 DE 112014003479 T DE112014003479 T DE 112014003479T DE 112014003479 T8 DE112014003479 T8 DE 112014003479T8
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- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361859508P | 2013-07-29 | 2013-07-29 | |
US61/859,508 | 2013-07-29 | ||
PCT/US2014/048586 WO2015017396A2 (en) | 2013-07-29 | 2014-07-29 | GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112014003479T5 DE112014003479T5 (de) | 2016-04-28 |
DE112014003479T8 true DE112014003479T8 (de) | 2016-10-20 |
Family
ID=52389767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112014003479.7T Active DE112014003479T8 (de) | 2013-07-29 | 2014-07-29 | GaN-Komponente mit verringerter Ausgangskapazität und Verfahren zur Herstellung derselben |
Country Status (7)
Country | Link |
---|---|
US (1) | US9331191B2 (de) |
JP (1) | JP6393758B2 (de) |
KR (1) | KR102193086B1 (de) |
CN (1) | CN105409007B (de) |
DE (1) | DE112014003479T8 (de) |
TW (1) | TWI555209B (de) |
WO (1) | WO2015017396A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9871108B2 (en) * | 2015-04-23 | 2018-01-16 | Rohm Co., Ltd. | Nitride semiconductor device |
JP6642883B2 (ja) * | 2015-10-08 | 2020-02-12 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
CN109196650B (zh) * | 2016-06-01 | 2022-04-29 | 宜普电源转换公司 | 多台阶表面钝化结构及其制造方法 |
US9853145B1 (en) * | 2016-10-04 | 2017-12-26 | Vanguard International Semiconductor Corporation | High-voltage semiconductor device and method of manufacturing the same |
US10818787B1 (en) | 2019-04-18 | 2020-10-27 | Semiconductor Components Industries, Llc | Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film |
US11049991B2 (en) * | 2019-09-09 | 2021-06-29 | Lite-On Singapore Pte. Ltd. | Manufacturing method of an optical module |
US11876118B2 (en) * | 2020-02-14 | 2024-01-16 | Vanguard International Semiconductor Corporation | Semiconductor structure with gate metal layer |
CN112038336B (zh) * | 2020-06-15 | 2023-03-24 | 湖南三安半导体有限责任公司 | 氮化物器件及其esd防护结构和制作方法 |
TWI794650B (zh) * | 2020-09-24 | 2023-03-01 | 世界先進積體電路股份有限公司 | 半導體結構及其製作方法 |
US11552188B2 (en) | 2020-11-24 | 2023-01-10 | Vanguard International Semiconductor Corporation | High-voltage semiconductor structure |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0783108B2 (ja) * | 1986-07-25 | 1995-09-06 | 株式会社日立製作所 | 半導体装置 |
EP1410444B1 (de) * | 2001-07-24 | 2012-08-22 | Cree, Inc. | Isolierendes Gate AlGaN/GaN HEMT |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
JP2007165446A (ja) * | 2005-12-12 | 2007-06-28 | Oki Electric Ind Co Ltd | 半導体素子のオーミックコンタクト構造 |
JP5065616B2 (ja) * | 2006-04-21 | 2012-11-07 | 株式会社東芝 | 窒化物半導体素子 |
US8399911B2 (en) * | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
US8823057B2 (en) * | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
JP2008263140A (ja) * | 2007-04-13 | 2008-10-30 | Toshiba Corp | 窒化物半導体素子 |
JP2008288289A (ja) * | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
US8076699B2 (en) | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
US8785973B2 (en) * | 2010-04-19 | 2014-07-22 | National Semiconductor Corporation | Ultra high voltage GaN ESD protection device |
US8742460B2 (en) * | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
JP5845638B2 (ja) * | 2011-06-02 | 2016-01-20 | 住友電気工業株式会社 | 半導体装置 |
US8653559B2 (en) * | 2011-06-29 | 2014-02-18 | Hrl Laboratories, Llc | AlGaN/GaN hybrid MOS-HFET |
JP5899803B2 (ja) * | 2011-10-28 | 2016-04-06 | サンケン電気株式会社 | 窒化物半導体装置 |
KR20130066396A (ko) | 2011-12-12 | 2013-06-20 | 삼성전기주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
US8803246B2 (en) * | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
US9202906B2 (en) * | 2013-03-14 | 2015-12-01 | Northrop Grumman Systems Corporation | Superlattice crenelated gate field effect transistor |
-
2014
- 2014-07-28 TW TW103125694A patent/TWI555209B/zh active
- 2014-07-29 CN CN201480042237.4A patent/CN105409007B/zh active Active
- 2014-07-29 US US14/445,940 patent/US9331191B2/en active Active
- 2014-07-29 WO PCT/US2014/048586 patent/WO2015017396A2/en active Application Filing
- 2014-07-29 DE DE112014003479.7T patent/DE112014003479T8/de active Active
- 2014-07-29 KR KR1020167005119A patent/KR102193086B1/ko active IP Right Grant
- 2014-07-29 JP JP2016531814A patent/JP6393758B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016529709A (ja) | 2016-09-23 |
DE112014003479T5 (de) | 2016-04-28 |
CN105409007A (zh) | 2016-03-16 |
KR102193086B1 (ko) | 2020-12-21 |
WO2015017396A2 (en) | 2015-02-05 |
TW201515223A (zh) | 2015-04-16 |
TWI555209B (zh) | 2016-10-21 |
JP6393758B2 (ja) | 2018-09-19 |
KR20160040617A (ko) | 2016-04-14 |
US9331191B2 (en) | 2016-05-03 |
CN105409007B (zh) | 2019-02-22 |
US20150028390A1 (en) | 2015-01-29 |
WO2015017396A3 (en) | 2015-11-05 |
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