DE112011103869T5 - Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind - Google Patents

Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind Download PDF

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DE112011103869T5
DE112011103869T5 DE112011103869T DE112011103869T DE112011103869T5 DE 112011103869 T5 DE112011103869 T5 DE 112011103869T5 DE 112011103869 T DE112011103869 T DE 112011103869T DE 112011103869 T DE112011103869 T DE 112011103869T DE 112011103869 T5 DE112011103869 T5 DE 112011103869T5
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iii
template layer
base material
metal nitride
metal
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German (de)
English (en)
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Ronald Thomas Bertram
Ed Lindow
Chantal Arena
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112011103869T 2010-11-23 2011-11-23 Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind Withdrawn DE112011103869T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41652510P 2010-11-23 2010-11-23
USUS-61/416,525 2010-11-23
FRFR-1060271 2010-12-08
FR1060271A FR2968831B1 (fr) 2010-12-08 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
PCT/EP2011/070771 WO2012069520A1 (en) 2010-11-23 2011-11-23 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers, and structures formed by such methods

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DE112011103869T5 true DE112011103869T5 (de) 2013-08-22

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DE112011103869T Withdrawn DE112011103869T5 (de) 2010-11-23 2011-11-23 Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind

Country Status (7)

Country Link
JP (1) JP5892447B2 (zh)
KR (1) KR20130122640A (zh)
CN (1) CN103221586B (zh)
DE (1) DE112011103869T5 (zh)
FR (1) FR2968831B1 (zh)
TW (1) TWI436409B (zh)
WO (1) WO2012069520A1 (zh)

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KR101713718B1 (ko) * 2015-02-23 2017-03-08 현대자동차 주식회사 연료전지용 분리판의 코팅 방법 및 연료전지용 분리판
CN106012022A (zh) * 2016-08-01 2016-10-12 中国电子科技集团公司第四十六研究所 一种提高半绝缘氮化镓单晶电阻率均匀性的Fe掺杂方法
JP7180984B2 (ja) * 2018-03-01 2022-11-30 株式会社ニューフレアテクノロジー 気相成長方法
CN109468680A (zh) * 2018-12-19 2019-03-15 东莞市中镓半导体科技有限公司 一种应用于氢化物气相外延设备的气体预热装置
TWI832407B (zh) * 2022-09-01 2024-02-11 財團法人金屬工業研究發展中心 電漿輔助退火系統及其退火方法
KR102546997B1 (ko) * 2022-12-02 2023-06-23 이상주 반도체 배기가스 처리장치

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US5610106A (en) 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6784085B2 (en) 2000-11-30 2004-08-31 North Carolina State University MIIIN based materials and methods and apparatus for producing same
WO2010101715A1 (en) 2009-03-03 2010-09-10 S.O.I.Tec Silicon On Insulator Technologies Gas injectors for cvd systems with the same

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JP2001217193A (ja) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd ＡｌＮバッファ層の作成方法、ＡｌＮバッファ層、ＧａＮ単結晶膜の作成方法およびＧａＮ単結晶膜
JP3946448B2 (ja) * 2001-02-08 2007-07-18 日亜化学工業株式会社 窒化物半導体基板の製造方法
EP1374282A1 (en) * 2001-02-27 2004-01-02 CBL Technologies Hybrid deposition system & methods
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4361747B2 (ja) * 2003-03-04 2009-11-11 東京エレクトロン株式会社 薄膜の形成方法
JP4765025B2 (ja) * 2004-02-05 2011-09-07 農工大ティー・エル・オー株式会社 ＡｌＮエピタキシャル層の成長方法及び気相成長装置
JP2005343736A (ja) * 2004-06-02 2005-12-15 Crystal System:Kk 単結晶製造方法とその装置
JP2006096588A (ja) * 2004-09-28 2006-04-13 Sumitomo Electric Ind Ltd 窒化ガリウム独立基板を製造する方法
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
JP4860309B2 (ja) * 2006-03-17 2012-01-25 日本碍子株式会社 Ｉｉｉ族窒化物結晶の作製装置およびｉｉｉ族窒化物結晶の積層構造体の作製方法
WO2008127425A2 (en) * 2006-11-22 2008-10-23 S.O.I.Tec Silicon On Insulator Technologies Abatement of reaction gases from gallium nitride deposition
US8382898B2 (en) 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
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WO2009045217A1 (en) * 2007-10-04 2009-04-09 Applied Materials, Inc. Parasitic particle suppression in the growth of iii-v nitride films using mocvd and hvpe
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Publication number Priority date Publication date Assignee Title
US5610106A (en) 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US6784085B2 (en) 2000-11-30 2004-08-31 North Carolina State University MIIIN based materials and methods and apparatus for producing same
WO2010101715A1 (en) 2009-03-03 2010-09-10 S.O.I.Tec Silicon On Insulator Technologies Gas injectors for cvd systems with the same

Also Published As

Publication number Publication date
TW201250791A (en) 2012-12-16
FR2968831B1 (fr) 2012-12-21
KR20130122640A (ko) 2013-11-07
JP2014502246A (ja) 2014-01-30
CN103221586B (zh) 2016-08-10
WO2012069520A1 (en) 2012-05-31
CN103221586A (zh) 2013-07-24
TWI436409B (zh) 2014-05-01
JP5892447B2 (ja) 2016-03-23
FR2968831A1 (fr) 2012-06-15

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