DE112011102890T5 - Kesteritschichtfertigung für Dünnschicht-Solarzellen - Google Patents

Kesteritschichtfertigung für Dünnschicht-Solarzellen Download PDF

Info

Publication number
DE112011102890T5
DE112011102890T5 DE112011102890T DE112011102890T DE112011102890T5 DE 112011102890 T5 DE112011102890 T5 DE 112011102890T5 DE 112011102890 T DE112011102890 T DE 112011102890T DE 112011102890 T DE112011102890 T DE 112011102890T DE 112011102890 T5 DE112011102890 T5 DE 112011102890T5
Authority
DE
Germany
Prior art keywords
substrate
deposited
sulfur
substantially planar
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112011102890T
Other languages
German (de)
English (en)
Inventor
Guha Supratik
Kejia Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE112011102890T5 publication Critical patent/DE112011102890T5/de
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE112011102890T 2010-10-26 2011-10-19 Kesteritschichtfertigung für Dünnschicht-Solarzellen Ceased DE112011102890T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/911,833 US8440497B2 (en) 2010-10-26 2010-10-26 Fabricating kesterite solar cells and parts thereof
US12/911,833 2010-10-26
PCT/EP2011/068254 WO2012055737A2 (en) 2010-10-26 2011-10-19 Kesterite layer fabrication for thin film solar cells

Publications (1)

Publication Number Publication Date
DE112011102890T5 true DE112011102890T5 (de) 2013-06-06

Family

ID=44897726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011102890T Ceased DE112011102890T5 (de) 2010-10-26 2011-10-19 Kesteritschichtfertigung für Dünnschicht-Solarzellen

Country Status (5)

Country Link
US (1) US8440497B2 (enExample)
JP (1) JP2014502039A (enExample)
CN (1) CN103180969A (enExample)
DE (1) DE112011102890T5 (enExample)
WO (1) WO2012055737A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120318361A1 (en) * 2011-06-20 2012-12-20 Alliance For Sustainable Energy, Llc Manufacturing thin films with chalcogen species with independent control over doping and bandgaps
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9153729B2 (en) * 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
US9349906B2 (en) 2014-09-27 2016-05-24 International Business Machines Corporation Anneal techniques for chalcogenide semiconductors
US9917216B2 (en) * 2014-11-04 2018-03-13 International Business Machines Corporation Flexible kesterite photovoltaic device on ceramic substrate
CN105679878A (zh) * 2014-11-17 2016-06-15 中国电子科技集团公司第十八研究所 一种共蒸发制备铜锌锡硫硒薄膜太阳电池吸收层的方法
US10032949B2 (en) * 2015-11-09 2018-07-24 International Business Machines Corporation Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
CN105470113B (zh) * 2015-11-20 2018-07-10 中国电子科技集团公司第十八研究所 一种CZTSSe薄膜太阳电池吸收层的制备方法
KR20170097440A (ko) * 2016-02-18 2017-08-28 전영권 태양전지 및 그 제조방법
PL241416B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu₂SnZnS₄, przeznaczonego do produkcji warstw czynnych w cienkowarstwowych ogniwach fotowoltaicznych
PL241410B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu<sub>₂</sub>SnZnS<sub>₄</sub>
CN110867383B (zh) * 2019-11-21 2023-05-30 中国电子科技集团公司第十八研究所 一种三步硫化工艺制备铜锌锡硫薄膜吸收层的方法
CN114864752A (zh) * 2022-06-15 2022-08-05 金陵科技学院 一种改善柔性CZTSSe薄膜太阳能电池吸收层残余应力的方法及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4543162B2 (ja) * 2001-09-05 2010-09-15 独立行政法人産業技術総合研究所 ＺｎＯＳＳｅ混晶半導体
US7518207B1 (en) * 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
JP5246839B2 (ja) * 2006-08-24 2013-07-24 独立行政法人産業技術総合研究所 半導体薄膜の製造方法、半導体薄膜の製造装置、光電変換素子の製造方法及び光電変換素子
JP2010245238A (ja) * 2009-04-03 2010-10-28 Promatic Kk 光電変換装置およびその製造方法ならびに硫化物焼結体ターゲットの製造方法
US20110017289A1 (en) * 2009-07-24 2011-01-27 Electronics And Telecommunications Research Institute Cigs solar cell and method of fabricating the same
WO2011090728A2 (en) * 2009-12-28 2011-07-28 David Jackrel Low cost solar cells formed using a chalcogenization rate modifier
CN101824638B (zh) * 2010-05-06 2012-12-19 深圳丹邦投资集团有限公司 一种电化学沉积铜锌锡硒半导体薄膜材料的方法

Also Published As

Publication number Publication date
JP2014502039A (ja) 2014-01-23
CN103180969A (zh) 2013-06-26
US8440497B2 (en) 2013-05-14
US20120100664A1 (en) 2012-04-26
WO2012055737A3 (en) 2012-12-27
WO2012055737A2 (en) 2012-05-03

Similar Documents

Publication Publication Date Title
DE112011102890T5 (de) Kesteritschichtfertigung für Dünnschicht-Solarzellen
DE112012003297B4 (de) Deckschichten für verbesserte Kristallisation
DE102009045929A1 (de) Solarzelle und Verfahren zum Herstellen derselben
DE102011018268A1 (de) Single Junction CIGS/CIC Solar Module
EP0715358B1 (de) Verfahren zur Herstellung einer Solarzelle mit Chalkopyrit-Absorberschicht und so hergestellte Solarzelle
DE112011102949T5 (de) Diffusionssperrschicht für Dünnschicht-Solarzelle
DE102012103243B4 (de) Verfahren zur zeitlichen Veränderung der Laserintensität während des Ritzens einer Photovoltaikvorrichtung
DE112009002289T5 (de) Dünnfilm-Natriumspezies-Sperrschicht-Verfahren und eine Struktur für eine Dünnfilm-Photovoltaikzelle auf CIGS-Basis
DE112008003144T5 (de) Schichtstruktur von CIS Solarzelle, integrierte Struktur von CIS Dünnschichtsolarzelle sowie deren Herstellungsverfahren
DE112009002238T5 (de) Verfahren und Struktur für eine photovoltaische Dünnschicht-Tandemzelle
DE202004021800U1 (de) Halbleiterfilme aus einer quartären oder höheren Legierung der Gruppe I-III-VI
DE102012100795A1 (de) Superstrat-Solarzelle
DE102012108901A1 (de) Verfahren und System zum Herstellen von Chalcogenid-Halbleitermaterialien unter Verwendung von Sputter- und Verdampfungsfunktionen
DE102011056565A1 (de) Verfahren zum Bilden einer Cadmiumzinnoxid-Schicht und einer photovoltaischen Vorrichtung
DE102013104232A1 (de) Solarzelle
DE102012109883A1 (de) Verfahren zum Herstellen einer Dünnschichtsolarzelle mit pufferfreiem Fertigungsprozess
DE102012100259A1 (de) Verfahren zum Erzeugen eines halbleitenden Films und Photovoltaikvorrichtung
DE102011056639A1 (de) Verfahren zum Herstellen einer transparenten leitenden Oxidschicht und einer photovoltaischen Vorrichtung
US10319871B2 (en) Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber
De Alwis et al. Influence of the type of conducting glass substrate on the properties of electrodeposited CdS and CdTe thin films
DE102012104616B4 (de) Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis
DE112012001058T5 (de) Tandem-Solarzelle mit verbessertem Absorptionsmaterial
US20190013424A1 (en) Technique for Achieving Large-Grain Ag2ZnSn(S,Se)4 Thin Films
EP2755242B1 (en) Method for producing cigs film, and method for manufacturing cigs solar cell using same
DE3586847T2 (de) Herstellungsverfahren eines zusammengesetzten halbleiters.

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R016 Response to examination communication
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final
R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE