DE112005002353B8 - Verfahren zur Herstellung von Sammelleitungen aus Kupfer - Google Patents

Verfahren zur Herstellung von Sammelleitungen aus Kupfer Download PDF

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Publication number
DE112005002353B8
DE112005002353B8 DE112005002353T DE112005002353T DE112005002353B8 DE 112005002353 B8 DE112005002353 B8 DE 112005002353B8 DE 112005002353 T DE112005002353 T DE 112005002353T DE 112005002353 T DE112005002353 T DE 112005002353T DE 112005002353 B8 DE112005002353 B8 DE 112005002353B8
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DE
Germany
Prior art keywords
manifolds
copper
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE112005002353T
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German (de)
English (en)
Other versions
DE112005002353B4 (de
DE112005002353T5 (de
Inventor
Mikio Watanabe
Hideaki Zama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
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Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE112005002353T5 publication Critical patent/DE112005002353T5/de
Publication of DE112005002353B4 publication Critical patent/DE112005002353B4/de
Application granted granted Critical
Publication of DE112005002353B8 publication Critical patent/DE112005002353B8/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/92—Ketonic chelates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE112005002353T 2004-09-27 2005-09-12 Verfahren zur Herstellung von Sammelleitungen aus Kupfer Expired - Lifetime DE112005002353B8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004279365A JP4783561B2 (ja) 2004-09-27 2004-09-27 銅配線の形成方法
JP2004-279365 2004-09-27
PCT/JP2005/016712 WO2006035591A1 (ja) 2004-09-27 2005-09-12 銅配線の形成方法

Publications (3)

Publication Number Publication Date
DE112005002353T5 DE112005002353T5 (de) 2007-09-06
DE112005002353B4 DE112005002353B4 (de) 2012-06-14
DE112005002353B8 true DE112005002353B8 (de) 2012-12-20

Family

ID=36118743

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005002353T Expired - Lifetime DE112005002353B8 (de) 2004-09-27 2005-09-12 Verfahren zur Herstellung von Sammelleitungen aus Kupfer

Country Status (7)

Country Link
US (1) US8034403B2 (https=)
JP (1) JP4783561B2 (https=)
KR (2) KR100934887B1 (https=)
CN (1) CN100479114C (https=)
DE (1) DE112005002353B8 (https=)
TW (1) TW200620433A (https=)
WO (1) WO2006035591A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5323425B2 (ja) * 2007-09-03 2013-10-23 株式会社アルバック 半導体装置の製造方法
KR100914982B1 (ko) * 2008-01-02 2009-09-02 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
KR100924557B1 (ko) * 2008-01-04 2009-11-02 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
JP5353109B2 (ja) 2008-08-15 2013-11-27 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100973277B1 (ko) 2008-08-29 2010-07-30 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
CN103135819A (zh) * 2011-11-29 2013-06-05 迎辉科技股份有限公司 具有抗氧化金属层的导电基板
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US11014814B2 (en) * 2016-07-27 2021-05-25 Dowa Thermotech Co., Ltd. Vanadium nitride film, and member coated with vanadium nitride film and method for manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222568A (ja) * 1995-02-10 1996-08-30 Ulvac Japan Ltd 銅配線製造方法、半導体装置、及び銅配線製造装置
WO2003038892A2 (en) * 2001-10-26 2003-05-08 Applied Materials, Inc. Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
JP2003252823A (ja) * 2002-02-28 2003-09-10 Mitsubishi Materials Corp 有機金属化学蒸着法用有機銅化合物及びそれを用いて作製した銅薄膜
JP2003292495A (ja) * 2002-01-31 2003-10-15 Ube Ind Ltd 銅錯体およびこれを用いた銅含有薄膜の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11217673A (ja) * 1997-11-28 1999-08-10 Japan Pionics Co Ltd 窒化膜の製造方法
JP2943805B1 (ja) * 1998-09-17 1999-08-30 日本電気株式会社 半導体装置及びその製造方法
JP2003522827A (ja) * 1998-11-12 2003-07-29 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ 段差被覆率が改善された拡散バリア材料
KR100460746B1 (ko) * 1999-04-13 2004-12-09 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
JP5031953B2 (ja) * 2001-06-28 2012-09-26 株式会社アルバック 銅材料充填プラグ及び銅材料充填プラグの製造方法
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
CN100472739C (zh) * 2004-11-08 2009-03-25 Tel艾派恩有限公司 铜互连布线和形成铜互连布线的方法
JP5820267B2 (ja) * 2008-03-21 2015-11-24 プレジデント アンド フェローズ オブ ハーバード カレッジ 配線用セルフアライン（自己整合）バリア層

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222568A (ja) * 1995-02-10 1996-08-30 Ulvac Japan Ltd 銅配線製造方法、半導体装置、及び銅配線製造装置
WO2003038892A2 (en) * 2001-10-26 2003-05-08 Applied Materials, Inc. Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
JP2003292495A (ja) * 2002-01-31 2003-10-15 Ube Ind Ltd 銅錯体およびこれを用いた銅含有薄膜の製造方法
US20050080282A1 (en) * 2002-01-31 2005-04-14 Ube Indstries, Ltd. Copper complexes and process for formatiom of copper-containing thin films by using the same
JP2003252823A (ja) * 2002-02-28 2003-09-10 Mitsubishi Materials Corp 有機金属化学蒸着法用有機銅化合物及びそれを用いて作製した銅薄膜

Also Published As

Publication number Publication date
TWI371787B (https=) 2012-09-01
KR20070056126A (ko) 2007-05-31
WO2006035591A1 (ja) 2006-04-06
KR100934887B1 (ko) 2010-01-06
KR100934888B1 (ko) 2010-01-06
DE112005002353B4 (de) 2012-06-14
JP4783561B2 (ja) 2011-09-28
KR20080100394A (ko) 2008-11-17
CN101032007A (zh) 2007-09-05
TW200620433A (en) 2006-06-16
US20100291290A1 (en) 2010-11-18
DE112005002353T5 (de) 2007-09-06
CN100479114C (zh) 2009-04-15
JP2006093552A (ja) 2006-04-06
US8034403B2 (en) 2011-10-11

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