DE1110320B - Elektrische Isolierung fuer Halbleiteranordnungen - Google Patents
Elektrische Isolierung fuer HalbleiteranordnungenInfo
- Publication number
- DE1110320B DE1110320B DES56341A DES0056341A DE1110320B DE 1110320 B DE1110320 B DE 1110320B DE S56341 A DES56341 A DE S56341A DE S0056341 A DES0056341 A DE S0056341A DE 1110320 B DE1110320 B DE 1110320B
- Authority
- DE
- Germany
- Prior art keywords
- electrical insulation
- semiconductor
- semiconductor material
- semiconductor assemblies
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000010292 electrical insulation Methods 0.000 title claims description 7
- 230000000712 assembly Effects 0.000 title 1
- 238000000429 assembly Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 241000947853 Vibrionales Species 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/025—Other inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL109367D NL109367C (enrdf_load_stackoverflow) | 1957-12-20 | ||
NL231600D NL231600A (enrdf_load_stackoverflow) | 1957-12-20 | ||
DES56341A DE1110320B (de) | 1957-12-20 | 1957-12-20 | Elektrische Isolierung fuer Halbleiteranordnungen |
CH6730058A CH365116A (de) | 1957-12-20 | 1958-10-13 | Elektrische Isolierung von elektrischen Leitern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES56341A DE1110320B (de) | 1957-12-20 | 1957-12-20 | Elektrische Isolierung fuer Halbleiteranordnungen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1110320B true DE1110320B (de) | 1961-07-06 |
Family
ID=7491034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES56341A Pending DE1110320B (de) | 1957-12-20 | 1957-12-20 | Elektrische Isolierung fuer Halbleiteranordnungen |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH365116A (enrdf_load_stackoverflow) |
DE (1) | DE1110320B (enrdf_load_stackoverflow) |
NL (2) | NL231600A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1230132B (de) * | 1964-05-08 | 1966-12-08 | Telefunken Patent | Halbleiteranordnung mit einem auf einer metallischen Grundplatte befestigten Halbleiterkoerper |
DE2755404A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Halbleiteranordnung |
-
0
- NL NL109367D patent/NL109367C/xx active
- NL NL231600D patent/NL231600A/xx unknown
-
1957
- 1957-12-20 DE DES56341A patent/DE1110320B/de active Pending
-
1958
- 1958-10-13 CH CH6730058A patent/CH365116A/de unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1230132B (de) * | 1964-05-08 | 1966-12-08 | Telefunken Patent | Halbleiteranordnung mit einem auf einer metallischen Grundplatte befestigten Halbleiterkoerper |
DE2755404A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
CH365116A (de) | 1962-10-31 |
NL231600A (enrdf_load_stackoverflow) | |
NL109367C (enrdf_load_stackoverflow) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3851985T2 (de) | Wärmeleitende Packung für elektronische Bauelemente. | |
DE102009043441B4 (de) | Halbleitermodul | |
DE102011077543A1 (de) | Halbleitervorrichtung | |
DE10251247A1 (de) | Halbleiterbaugruppe mit Halbleiterchip, gebildet unter Verwendung eines Halbleiters mit breitem Bandabstand als Basismaterial | |
DE2847853C2 (de) | Halbleiteranordnung | |
EP0124029A2 (de) | Ein elektrisches Bauteil tragendes, gut kühlbares Schaltungsmodul | |
DE4316639C2 (de) | Halbleitermodul mit verbesserter Wärmeableitung und Verfahren zu seiner Herstellung | |
DE2130122A1 (de) | Schottkygrenzschicht-Feldeffekttransistor | |
DE112016007096B4 (de) | Halbleitervorrichtung | |
DE2012440C3 (de) | Halbleiteranordnung für gasdicht abgeschlossene scheibenförmige Halbleiterelemente | |
DE2855493A1 (de) | Leistungs-halbleiterbauelement | |
DE1052572B (de) | Elektrodensystem, das einen halbleitenden Einkristall mit wenigstens zwei Teilen verschiedener Leitungsart enthaelt, z. B. Kristalldiode oder Transistor | |
DE1263190B (de) | Halbleiteranordnung mit einem in ein Gehaeuse eingeschlossenen Halbleiterkoerper | |
DE1170079B (de) | Halbleiteranordnung | |
DE102016105783A1 (de) | Leistungshalbleitereinrichtung | |
DE2632154A1 (de) | Halbleiteranordnung mit einem an einem metallwaermeabstrahler angeloeteten halbleiterbauelement | |
DE1110320B (de) | Elektrische Isolierung fuer Halbleiteranordnungen | |
DE1904118A1 (de) | Halbleitervorrichtung mit verbessertem Elektrodenanschlussaufbau | |
DE1166383B (de) | Halbleiteranordnung | |
DE102021128793A1 (de) | Halbleitergehäuse | |
DE3331631A1 (de) | Halbleiter-bauelement | |
DE112021005246T5 (de) | Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements | |
DE10002362A1 (de) | Halbleiterbauelement | |
DE1262388B (de) | Verfahren zur Erzeugung eines nicht-gleichrichtenden UEbergangs zwischen einer Elektrode und einem dotierten thermoelelktrischen Halbleiter fuer ein thermoelektrisches Geraet | |
DE1539652A1 (de) | Halbleiteranordnung |