DE1105524B - Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors,mit einer auflegierten Elektrode - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors,mit einer auflegierten ElektrodeInfo
- Publication number
- DE1105524B DE1105524B DEN17048A DEN0017048A DE1105524B DE 1105524 B DE1105524 B DE 1105524B DE N17048 A DEN17048 A DE N17048A DE N0017048 A DEN0017048 A DE N0017048A DE 1105524 B DE1105524 B DE 1105524B
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- diffused
- zone
- electrode
- electrode material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 24
- 239000007772 electrode material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000000155 melt Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000035515 penetration Effects 0.000 claims description 10
- 238000010309 melting process Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000003303 reheating Methods 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 11
- 239000000370 acceptor Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 bismuth-aluminum-arsenic Chemical compound 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL230316 | 1958-08-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1105524B true DE1105524B (de) | 1961-04-27 |
Family
ID=19751303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN17048A Pending DE1105524B (de) | 1958-08-07 | 1959-08-04 | Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors,mit einer auflegierten Elektrode |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221362B (de) * | 1962-01-12 | 1966-07-21 | Philips Nv | Verfahren zum Herstellen einer Halbleiteranordnung |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3172785A (en) * | 1960-01-30 | 1965-03-09 | Method of manufacturing transistors particularly for switching purposes | |
| US3220895A (en) * | 1961-08-25 | 1965-11-30 | Raytheon Co | Fabrication of barrier material devices |
| US3211594A (en) * | 1961-12-19 | 1965-10-12 | Hughes Aircraft Co | Semiconductor device manufacture |
| US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
| US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
| US3257589A (en) * | 1962-05-22 | 1966-06-21 | Texas Instruments Inc | Transistors and the fabrication thereof |
| US3268375A (en) * | 1962-05-22 | 1966-08-23 | Gordon J Ratcliff | Alloy-diffusion process for fabricating germanium transistors |
| NL297002A (US07534539-20090519-C00280.png) * | 1962-08-23 | 1900-01-01 | ||
| NL297821A (US07534539-20090519-C00280.png) * | 1962-10-08 | |||
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| US3235419A (en) * | 1963-01-15 | 1966-02-15 | Philips Corp | Method of manufacturing semiconductor devices |
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| US3513041A (en) * | 1967-06-19 | 1970-05-19 | Motorola Inc | Fabrication of a germanium diffused base power transistor |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1163048A (fr) * | 1955-09-02 | 1958-09-22 | Gen Electric Co Ltd | Diffusion différentielle d'impuretés dans les semi-conducteurs |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
| US2836522A (en) * | 1952-11-15 | 1958-05-27 | Rca Corp | Junction type semiconductor device and method of its manufacture |
| BE531626A (US07534539-20090519-C00280.png) * | 1953-09-04 | |||
| US2907969A (en) * | 1954-02-19 | 1959-10-06 | Westinghouse Electric Corp | Photoelectric device |
| BE542380A (US07534539-20090519-C00280.png) * | 1954-10-29 |
-
0
- NL NL111773D patent/NL111773C/xx active
- NL NL230316D patent/NL230316A/xx unknown
-
1959
- 1959-07-03 US US824868A patent/US3074826A/en not_active Expired - Lifetime
- 1959-08-04 CH CH7656159A patent/CH376186A/de unknown
- 1959-08-04 DE DEN17048A patent/DE1105524B/de active Pending
- 1959-08-04 GB GB26566/59A patent/GB917773A/en not_active Expired
- 1959-08-06 FR FR802194A patent/FR1232095A/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1163048A (fr) * | 1955-09-02 | 1958-09-22 | Gen Electric Co Ltd | Diffusion différentielle d'impuretés dans les semi-conducteurs |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221362B (de) * | 1962-01-12 | 1966-07-21 | Philips Nv | Verfahren zum Herstellen einer Halbleiteranordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1232095A (fr) | 1960-10-05 |
| NL111773C (US07534539-20090519-C00280.png) | |
| GB917773A (en) | 1963-02-06 |
| NL230316A (US07534539-20090519-C00280.png) | |
| US3074826A (en) | 1963-01-22 |
| CH376186A (de) | 1964-03-31 |
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