FR1232095A - Procédé pour la fabrication d'un dispositif semi-conducteur, en particulier d'un transistor, et produits en résultant - Google Patents

Procédé pour la fabrication d'un dispositif semi-conducteur, en particulier d'un transistor, et produits en résultant

Info

Publication number
FR1232095A
FR1232095A FR802194A FR802194A FR1232095A FR 1232095 A FR1232095 A FR 1232095A FR 802194 A FR802194 A FR 802194A FR 802194 A FR802194 A FR 802194A FR 1232095 A FR1232095 A FR 1232095A
Authority
FR
France
Prior art keywords
transistor
manufacturing
semiconductor device
resulting products
products
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR802194A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1232095A publication Critical patent/FR1232095A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
FR802194A 1958-08-07 1959-08-06 Procédé pour la fabrication d'un dispositif semi-conducteur, en particulier d'un transistor, et produits en résultant Expired FR1232095A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230316 1958-08-07

Publications (1)

Publication Number Publication Date
FR1232095A true FR1232095A (fr) 1960-10-05

Family

ID=19751303

Family Applications (1)

Application Number Title Priority Date Filing Date
FR802194A Expired FR1232095A (fr) 1958-08-07 1959-08-06 Procédé pour la fabrication d'un dispositif semi-conducteur, en particulier d'un transistor, et produits en résultant

Country Status (6)

Country Link
US (1) US3074826A (fr)
CH (1) CH376186A (fr)
DE (1) DE1105524B (fr)
FR (1) FR1232095A (fr)
GB (1) GB917773A (fr)
NL (2) NL111773C (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247918A (fr) * 1960-01-30
US3220895A (en) * 1961-08-25 1965-11-30 Raytheon Co Fabrication of barrier material devices
US3211594A (en) * 1961-12-19 1965-10-12 Hughes Aircraft Co Semiconductor device manufacture
BE627004A (fr) * 1962-01-12
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
NL297002A (fr) * 1962-08-23 1900-01-01
NL297821A (fr) * 1962-10-08
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3513041A (en) * 1967-06-19 1970-05-19 Motorola Inc Fabrication of a germanium diffused base power transistor
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
BE531626A (fr) * 1953-09-04
US2907969A (en) * 1954-02-19 1959-10-06 Westinghouse Electric Corp Photoelectric device
BE542380A (fr) * 1954-10-29
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies

Also Published As

Publication number Publication date
GB917773A (en) 1963-02-06
NL111773C (fr)
US3074826A (en) 1963-01-22
CH376186A (de) 1964-03-31
DE1105524B (de) 1961-04-27
NL230316A (fr)

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