DE1104032B - Halbleiteranordnung mit nichtlinearer Widerstandskennlinie und Schaltungsanordnung unter Verwendung einer solchen Halbleiter-anordnung - Google Patents

Halbleiteranordnung mit nichtlinearer Widerstandskennlinie und Schaltungsanordnung unter Verwendung einer solchen Halbleiter-anordnung

Info

Publication number
DE1104032B
DE1104032B DEW24463A DEW0024463A DE1104032B DE 1104032 B DE1104032 B DE 1104032B DE W24463 A DEW24463 A DE W24463A DE W0024463 A DEW0024463 A DE W0024463A DE 1104032 B DE1104032 B DE 1104032B
Authority
DE
Germany
Prior art keywords
junction
semiconductor
arrangement
arrangement according
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW24463A
Other languages
German (de)
English (en)
Inventor
Henry Asaph Stone Jun
William Jennings Grubbs Jun
Edwar Izard Doucette
Raymond Myrl Stone Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1104032B publication Critical patent/DE1104032B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Analogue/Digital Conversion (AREA)
  • Electronic Switches (AREA)
  • Thermistors And Varistors (AREA)
DEW24463A 1957-12-03 1958-11-15 Halbleiteranordnung mit nichtlinearer Widerstandskennlinie und Schaltungsanordnung unter Verwendung einer solchen Halbleiter-anordnung Pending DE1104032B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US700319A US2954486A (en) 1957-12-03 1957-12-03 Semiconductor resistance element
US727655A US2954551A (en) 1957-12-03 1958-04-10 Field effect varistor circuits

Publications (1)

Publication Number Publication Date
DE1104032B true DE1104032B (de) 1961-04-06

Family

ID=27106588

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW24463A Pending DE1104032B (de) 1957-12-03 1958-11-15 Halbleiteranordnung mit nichtlinearer Widerstandskennlinie und Schaltungsanordnung unter Verwendung einer solchen Halbleiter-anordnung

Country Status (5)

Country Link
US (2) US2954486A (US08092553-20120110-C00004.png)
BE (1) BE572049A (US08092553-20120110-C00004.png)
DE (1) DE1104032B (US08092553-20120110-C00004.png)
FR (1) FR1213914A (US08092553-20120110-C00004.png)
GB (1) GB896246A (US08092553-20120110-C00004.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528090A1 (de) * 1974-07-01 1976-01-22 Gen Electric Polykristalliner varistor mit vielen anschluessen

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US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
US3023347A (en) * 1960-07-15 1962-02-27 Westinghouse Electric Corp Oscillator having predetermined temperature-frequency characteristics
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3173101A (en) * 1961-02-15 1965-03-09 Westinghouse Electric Corp Monolithic two stage unipolar-bipolar semiconductor amplifier device
US3142021A (en) * 1961-02-27 1964-07-21 Westinghouse Electric Corp Monolithic semiconductor amplifier providing two amplifier stages
US3193740A (en) * 1961-09-16 1965-07-06 Nippon Electric Co Semiconductor device
NL293525A (US08092553-20120110-C00004.png) * 1962-06-01
GB1039342A (en) * 1963-04-17 1966-08-17 Standard Telephones Cables Ltd Improvements in or relating to decoding equipment
US3404321A (en) * 1963-01-29 1968-10-01 Nippon Electric Co Transistor body enclosing a submerged integrated resistor
US3217215A (en) * 1963-07-05 1965-11-09 Int Rectifier Corp Field effect transistor
US3460004A (en) * 1963-08-20 1969-08-05 Siemens Ag Mechanical to electrical semiconductor transducer
US3354364A (en) * 1963-08-22 1967-11-21 Nippon Electric Co Discontinuous resistance semiconductor device
US3343026A (en) * 1963-11-27 1967-09-19 H P Associates Semi-conductive radiation source
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3265905A (en) * 1964-02-06 1966-08-09 Us Army Integrated semiconductor resistance element
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3351824A (en) * 1964-04-28 1967-11-07 Northern Electric Co Constant current device
US3303464A (en) * 1964-05-27 1967-02-07 Harris Intertype Corp Ring-sum logic circuit
US3320568A (en) * 1964-08-10 1967-05-16 Raytheon Co Sensitized notched transducers
US3400390A (en) * 1964-10-05 1968-09-03 Schlumberger Technology Corp Signal converter for converting a binary signal to a reciprocal analog signal
US3435302A (en) * 1964-11-26 1969-03-25 Sumitomo Electric Industries Constant current semiconductor device
GB1194307A (en) * 1969-03-07 1970-06-10 Ibm Digital to Analog Conversion.
US3612773A (en) * 1969-07-22 1971-10-12 Bell Telephone Labor Inc Electronic frequency switching circuit for multifrequency signal generator
US3646587A (en) * 1969-12-16 1972-02-29 Hughes Aircraft Co Digital-to-analog converter using field effect transistor switch resistors
US3755807A (en) * 1972-02-15 1973-08-28 Collins Radio Co Resistor-ladder circuit
US4496963A (en) * 1976-08-20 1985-01-29 National Semiconductor Corporation Semiconductor device with an ion implanted stabilization layer
US4187513A (en) * 1977-11-30 1980-02-05 Eaton Corporation Solid state current limiter
US4209781A (en) * 1978-05-19 1980-06-24 Texas Instruments Incorporated MOS Digital-to-analog converter employing scaled field effect devices
DE2939455C2 (de) * 1979-09-28 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM-Signalen, in diesen entsprechende Analog-Signale, mit einem R-2R-Kettennetzwerk
FR2469836A1 (fr) * 1979-11-16 1981-05-22 Hennion Bernard Systeme de codage et decodage a multiniveaux en courant
DE3005301C2 (de) * 1980-02-13 1985-11-21 Telefunken electronic GmbH, 7100 Heilbronn Varaktor- oder Mischerdiode
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
US4339707A (en) * 1980-12-24 1982-07-13 Honeywell Inc. Band gap voltage regulator
US4472648A (en) * 1981-08-25 1984-09-18 Harris Corporation Transistor circuit for reducing gate leakage current in a JFET
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4603319A (en) * 1984-08-27 1986-07-29 Rca Corporation Digital-to-analog converter with reduced output capacitance
FR2592250B1 (fr) * 1985-12-24 1990-07-13 Thomson Csf Source de courant programmable et convertisseur numerique-analogique comportant une telle source.
FR2623350B1 (fr) * 1987-11-17 1990-02-16 Thomson Hybrides Microondes Convertisseur numerique analogique a haute stabilite de tension de sortie
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
JPH10508430A (ja) * 1994-06-09 1998-08-18 チップスケール・インコーポレーテッド 抵抗器の製造
US10250210B2 (en) 2016-07-05 2019-04-02 Dialog Semiconductor (Uk) Limited Circuit and method for a high common mode rejection amplifier by using a digitally controlled gain trim circuit

Citations (1)

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Publication number Priority date Publication date Assignee Title
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices

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Publication number Priority date Publication date Assignee Title
US2803815A (en) * 1957-08-20 wulfsberg
US2015533A (en) * 1932-03-16 1935-09-24 Richard M Ritter Composition for mothproofing
US2170193A (en) * 1935-01-21 1939-08-22 Safety Car Heating & Lighting Electric regulation
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
NL79529C (US08092553-20120110-C00004.png) * 1948-09-24
US2658139A (en) * 1950-03-29 1953-11-03 Raytheon Mfg Co Binary decoding system
US2701289A (en) * 1951-04-28 1955-02-01 Rca Corp Ballast tube
US2738504A (en) * 1951-08-18 1956-03-13 Gen Precision Lab Inc Digital number converter
NL91981C (US08092553-20120110-C00004.png) * 1951-08-24
US2731631A (en) * 1952-10-31 1956-01-17 Rca Corp Code converter circuit
US2697052A (en) * 1953-07-24 1954-12-14 Bell Telephone Labor Inc Fabricating of semiconductor translating devices
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
US2827233A (en) * 1954-12-13 1958-03-18 Bell Telephone Labor Inc Digital to analog converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2528090A1 (de) * 1974-07-01 1976-01-22 Gen Electric Polykristalliner varistor mit vielen anschluessen

Also Published As

Publication number Publication date
FR1213914A (fr) 1960-04-05
GB896246A (en) 1962-05-16
US2954551A (en) 1960-09-27
US2954486A (en) 1960-09-27
BE572049A (US08092553-20120110-C00004.png) 1900-01-01

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