DE1075238B - Selenium photo element - Google Patents
Selenium photo elementInfo
- Publication number
- DE1075238B DE1075238B DENDAT1075238D DE1075238DA DE1075238B DE 1075238 B DE1075238 B DE 1075238B DE NDAT1075238 D DENDAT1075238 D DE NDAT1075238D DE 1075238D A DE1075238D A DE 1075238DA DE 1075238 B DE1075238 B DE 1075238B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- selenium
- conductive
- support
- photo element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 18
- 229910052711 selenium Inorganic materials 0.000 title claims description 18
- 239000011669 selenium Substances 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
Selenphotoelement Die Erfindung betrifft ein Selenphotoelement mit einem durchsichtigen und auf der einen Oberfläche leitenden Träger aus Quarz, Quarzglas, Glas oder einem anderen anorganischen Träger, einer auf der leitenden Seite des Trägers aufliegenden Selenschicht und einer auf der Selenschicht liegenden Gegenelektrode.Selenium photo element The invention relates to a selenium photo element a transparent carrier made of quartz, quartz glass, which is conductive on one surface, Glass or other inorganic support, one on the conductive side of the Selenium layer resting on the carrier and a counter electrode lying on the selenium layer.
Bei den bekannten photoelektrischen Elementen, deren vorderste Schicht aus Glas bestand, welches an seiner Rückseite einen Belag aus einer dünnen Metallschicht trug, mußte diese Metallschicht sowohl als lichtdurchlässige Abnahmeelektrode als auch als Spiegel dienen, da diese Zelle gleichzeitig als Spiegel in Spiegelreflexkameras verwendet wurde. Die Lichtverluste dieser Zelle waren naturgemäß sehr groß, so daß sie nur einen sehr geringen Wirkungsgrad hatte.In the case of the known photoelectric elements, their foremost layer consisted of glass, which on its back was covered with a thin metal layer carried, this metal layer had to act as both a translucent pick-up electrode as well as a Also serve as a mirror, as this cell doubles as a mirror in SLR cameras was used. The light losses in this cell were naturally very great, so that it had only a very low level of efficiency.
Um diese Nachteile zu beseitigen, wird vorgeschlagen, bei Selenphotoelementen der eingangs angegebenen Art, sogenannten »Vorderwandzellen«, bei denen das Licht durch den durchsichtigen Träger, nicht aber durch die Selenschicht hindurchgehen muß, erfindungsgemäß die elektrisch leitende Oberflächenschicht durch unter gegebenenfalls mehrmaligem Erwärmen des Trägers auf 500 bis 650° C und darauffolgendem Abkühlen erfolgtes Eindiffundieren einer vorher auf den Träger aufgedampften Zinnschicht zu bilden.In order to overcome these disadvantages, it is proposed to use selenium photo elements of the type mentioned at the beginning, so-called "front wall cells", in which the light go through the transparent support, but not through the selenium layer must, according to the invention, the electrically conductive surface layer through under if necessary repeated heating of the carrier to 500 to 650 ° C. and subsequent cooling A tin layer previously vapor-deposited onto the carrier has diffused in to build.
In der Zeichnung ist ein erfindungsgemäß --aufgebautes Selenphotoelement im Schnitt beispielsweise dargestellt. Hierbei ist mit 1 der lichtdurchlässige, aus Glas, Quarzglas, Quarz oder einem anderen lichtdurchlässigen anorganischen Stoff bestehende Träger bezeichnet. 2 bedeutet die auf diesen Träger aufgebrachte lichtdurchlässige und elektrisch leitende Schicht und 3 die auf dieser Schicht liegende Selenschicht. Auf der Trägerplatte 1 kann eine Abnahmeelektrode 4 angeordnet sein. Als Gegenelektrode dient die Metallschicht 5, welche die Selenschicht 3 abdeckt. Der Lichteinfall erfolgt in der mit dem Pfeil 6 bezeichneten Richtung.In the drawing is a selenium photo element constructed according to the invention shown in section, for example. Here with 1 the translucent, made of glass, quartz glass, quartz or another translucent inorganic substance existing carriers. 2 means the translucent layer applied to this carrier and electrically conductive layer and 3 the selenium layer lying on this layer. A pick-up electrode 4 can be arranged on the carrier plate 1. As a counter electrode the metal layer 5, which covers the selenium layer 3, is used. The incidence of light occurs in the direction indicated by arrow 6.
Zur Herstellung des gemäß der Erfindung aufgebauten Selenphotoelementes wird auf den Träger 1 zunächst eine sehr dünne Zinnschicht aufgedampft. Diese wird durch eine Temperung bei einer Temperatur von 500 bis 650° C zur Hineindiffusion in die Oberfläche des Trägers gebracht; dabei bildet sich eine elektrisch halbleitende Schicht und gleichzeitig an der Oberfläche (Grenzfläche) die für die Funktion des Photoelementes notwendige Sperrschicht. Es hat sich hierbei gezeigt, daß der günstigste Widerstandswert der dabei entstehenden Halbleiterschicht dann erreicht wird, wenn der Träger mit dieser Zinnschicht plötzlich auf die angegebene Temperatur gebracht und nach dem Einbrennen ebenso rasch wieder abgekühlt wird. Um besonders geringe Oberflächenwiderstände zu erreichen, kann dieser Vorgang mehrmals wiederholt werden. Auf die leitend gemachte Oberfläche des Trägers wird nun die dünne Selenschicht 3 und auf diese die als Gegenelektrode dienende Metallschicht 5 aufgedampft.For the production of the selenium photo element constructed according to the invention a very thin layer of tin is first vapor-deposited onto the carrier 1. This will by tempering at a temperature of 500 to 650 ° C for diffusion into it brought into the surface of the support; this forms an electrically semiconducting one Layer and at the same time on the surface (interface) that is responsible for the function of the Photoelement necessary barrier layer. It has been shown here that the cheapest The resistance value of the resulting semiconductor layer is reached when the carrier with this tin layer was suddenly brought to the specified temperature and is cooled again just as quickly after baking. To particularly low To achieve surface resistances, this process can be repeated several times. The thin selenium layer is now placed on the surface of the carrier that has been made conductive 3 and onto this the metal layer 5 serving as a counter electrode is vapor-deposited.
Die erforderliche Formierung der Selenschicht - eine Wärmebehandlung bei Temperaturen zwischen 120 und 130° C, durch welche das Selen in die lichtempfindliche Modifikation übergeführt wird - kann vor oder nach dem Aufdampfen der Gegenelektrode erfolgen.The necessary formation of the selenium layer - a heat treatment at temperatures between 120 and 130 ° C, through which the selenium in the photosensitive Modification is transferred - can be before or after the vapor deposition of the counter electrode take place.
Die freie Oberfläche des Trägers kann mit einer reflexmindernden Schicht (Antireflexbelag) versehen werden, um die Lichtverluste an der freien Oberfläche infolge Reflexion herabzusetzen.The free surface of the support can be coated with an anti-reflective layer (Anti-reflective coating) are provided to reduce the loss of light on the free surface decrease as a result of reflection.
Durch die Ausbildung des Selenphotoelementes gemäß der Erfindung ergibt sich eine wesentlich höhere Empfindlichkeit gegenüber den bekannten Vorderwandzellen.The formation of the selenium photo element according to the invention results a much higher sensitivity compared to the known anterior wall cells.
Claims (2)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1075238T |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1075238B true DE1075238B (en) | 1960-02-11 |
Family
ID=7720251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1075238D Pending DE1075238B (en) | Selenium photo element |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE1075238B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1194493B (en) * | 1962-02-09 | 1965-06-10 | Telefunken Patent | Coating-free surface electrode for a pn-electroluminescent light source |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE592734C (en) * | 1931-07-11 | 1934-02-13 | Max A E Pressler | Barrier photocell, especially vacuum barrier cell |
DE838924C (en) * | 1950-08-05 | 1952-07-10 | Sueddeutsche App Fabrik Gmbh | Dry rectifier and photo element |
AT175617B (en) * | 1950-09-23 | 1953-07-25 | Alois Dr Vogt | Opto-electrical converter with a translucent metal electrode and process for manufacturing opto-electrical converter |
US2677714A (en) * | 1951-09-21 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
DE922726C (en) * | 1931-01-09 | 1955-01-24 | Siemens Ag | Photo cell for converting light into current or voltage changes from a semiconductor |
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0
- DE DENDAT1075238D patent/DE1075238B/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE922726C (en) * | 1931-01-09 | 1955-01-24 | Siemens Ag | Photo cell for converting light into current or voltage changes from a semiconductor |
DE592734C (en) * | 1931-07-11 | 1934-02-13 | Max A E Pressler | Barrier photocell, especially vacuum barrier cell |
DE838924C (en) * | 1950-08-05 | 1952-07-10 | Sueddeutsche App Fabrik Gmbh | Dry rectifier and photo element |
AT175617B (en) * | 1950-09-23 | 1953-07-25 | Alois Dr Vogt | Opto-electrical converter with a translucent metal electrode and process for manufacturing opto-electrical converter |
US2677714A (en) * | 1951-09-21 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1194493B (en) * | 1962-02-09 | 1965-06-10 | Telefunken Patent | Coating-free surface electrode for a pn-electroluminescent light source |
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