DE1055131B - Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode - Google Patents

Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode

Info

Publication number
DE1055131B
DE1055131B DEI7142A DEI0007142A DE1055131B DE 1055131 B DE1055131 B DE 1055131B DE I7142 A DEI7142 A DE I7142A DE I0007142 A DEI0007142 A DE I0007142A DE 1055131 B DE1055131 B DE 1055131B
Authority
DE
Germany
Prior art keywords
semiconductor material
semiconductor
powdered
layers
massive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEI7142A
Other languages
German (de)
English (en)
Inventor
Lloyd Philip Hunter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US283222A external-priority patent/US2897105A/en
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE1055131B publication Critical patent/DE1055131B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
DEI7142A 1952-04-19 1953-04-18 Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode Pending DE1055131B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US283222A US2897105A (en) 1952-04-19 1952-04-19 Formation of p-n junctions
US783010A US3014819A (en) 1952-04-19 1958-12-26 Formation of p-n junctions

Publications (1)

Publication Number Publication Date
DE1055131B true DE1055131B (de) 1959-04-16

Family

ID=26961923

Family Applications (2)

Application Number Title Priority Date Filing Date
DEI7142A Pending DE1055131B (de) 1952-04-19 1953-04-18 Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode
DEI15763A Pending DE1102287B (de) 1952-04-19 1953-04-18 Verfahren zur Herstellung von scharfen pn-UEbergaengen in Halbleiterkoerpern von Halbleiter-anordnungen durch Zusammenschmelzen einer p-leitenden Zone mit einer n-leitenden Zone in einem Erhitzungs-prozess

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEI15763A Pending DE1102287B (de) 1952-04-19 1953-04-18 Verfahren zur Herstellung von scharfen pn-UEbergaengen in Halbleiterkoerpern von Halbleiter-anordnungen durch Zusammenschmelzen einer p-leitenden Zone mit einer n-leitenden Zone in einem Erhitzungs-prozess

Country Status (5)

Country Link
US (1) US3014819A (cg-RX-API-DMAC7.html)
DE (2) DE1055131B (cg-RX-API-DMAC7.html)
FR (1) FR1122216A (cg-RX-API-DMAC7.html)
GB (1) GB727447A (cg-RX-API-DMAC7.html)
NL (2) NL95545C (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994627A (en) * 1957-05-08 1961-08-01 Gen Motors Corp Manufacture of semiconductor devices
DE1095401B (de) * 1958-04-16 1960-12-22 Standard Elektrik Lorenz Ag Verfahren zum Eindiffundieren von Fremdstoffen in einen Halbleiterkoerper zur Herstellung einer elektrischen Halbleiteranordnung
NL274847A (cg-RX-API-DMAC7.html) * 1961-02-16
DE1163972B (de) * 1961-05-18 1964-02-27 Bbc Brown Boveri & Cie Verfahren zum Herstellen eines Halbleiterbauelements mit mindestens einem pn-UEbergang
DE1172378B (de) * 1961-07-14 1964-06-18 Siemens Ag Verfahren zur Herstellung einer elektrisch unsymmetrisch leitenden Halbleiteranordnung
US3188252A (en) * 1961-11-20 1965-06-08 Trw Semiconductors Inc Method of producing a broad area fused junction in a semiconductor body
NL300332A (cg-RX-API-DMAC7.html) * 1962-11-14
DE2019251A1 (de) * 1970-04-21 1971-11-04 Siemens Ag Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH247861A (de) * 1943-05-01 1947-03-31 Standard Telephon & Radio Ag Verfahren zur Herstellung von Trockengleichrichterscheiben und nach diesem Verfahren hergestellte Gleichrichterscheibe.
DE968581C (de) * 1952-02-24 1958-03-06 Siemens Ag Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2708255A (en) * 1949-06-18 1955-05-10 Albert C Nolte Minute metallic bodies
NL82014C (cg-RX-API-DMAC7.html) * 1949-11-30
US2708646A (en) * 1951-05-09 1955-05-17 Hughes Aircraft Co Methods of making germanium alloy semiconductors
US2859140A (en) * 1951-07-16 1958-11-04 Sylvania Electric Prod Method of introducing impurities into a semi-conductor
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH247861A (de) * 1943-05-01 1947-03-31 Standard Telephon & Radio Ag Verfahren zur Herstellung von Trockengleichrichterscheiben und nach diesem Verfahren hergestellte Gleichrichterscheibe.
DE968581C (de) * 1952-02-24 1958-03-06 Siemens Ag Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen

Also Published As

Publication number Publication date
NL95545C (cg-RX-API-DMAC7.html)
FR1122216A (fr) 1956-09-04
DE1102287B (de) 1961-03-16
GB727447A (en) 1955-03-30
NL177655B (nl)
US3014819A (en) 1961-12-26

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