CH247861A - Verfahren zur Herstellung von Trockengleichrichterscheiben und nach diesem Verfahren hergestellte Gleichrichterscheibe. - Google Patents
Verfahren zur Herstellung von Trockengleichrichterscheiben und nach diesem Verfahren hergestellte Gleichrichterscheibe.Info
- Publication number
- CH247861A CH247861A CH247861DA CH247861A CH 247861 A CH247861 A CH 247861A CH 247861D A CH247861D A CH 247861DA CH 247861 A CH247861 A CH 247861A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- rectifier disks
- disks
- rectifier
- dry
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/103—Conversion of the selenium or tellurium to the conductive state
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
- C01B15/12—Peroxyhydrates; Peroxyacids or salts thereof containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/929—Electrical contact feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Powder Metallurgy (AREA)
- Motor Or Generator Current Collectors (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US485384A US2364642A (en) | 1943-05-01 | 1943-05-01 | Method of making selenium elements |
US533426A US2462906A (en) | 1943-05-01 | 1944-04-29 | Manufacture of metal contact rectifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
CH247861A true CH247861A (de) | 1947-03-31 |
Family
ID=27048329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH247861D CH247861A (de) | 1943-05-01 | 1945-04-28 | Verfahren zur Herstellung von Trockengleichrichterscheiben und nach diesem Verfahren hergestellte Gleichrichterscheibe. |
Country Status (6)
Country | Link |
---|---|
US (2) | US2364642A (de) |
BE (2) | BE461663A (de) |
CH (1) | CH247861A (de) |
FR (2) | FR940901A (de) |
GB (2) | GB578208A (de) |
NL (2) | NL136384B (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2749489A (en) * | 1950-12-04 | 1956-06-05 | Int Standard Electric Corp | Dry contact rectifiers |
DE1015542B (de) * | 1939-01-22 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Herstellung von Selengleichrichterplatten |
DE1027799B (de) * | 1952-12-05 | 1958-04-10 | Standard Elektrik Ag | Geheizte Pressvorrichtung zur Herstellung von Selengleichrichtern und Selenphotoelementen |
DE1055131B (de) * | 1952-04-19 | 1959-04-16 | Ibm Deutschland | Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode |
DE975179C (de) * | 1952-12-31 | 1961-09-21 | Rca Corp | Verfahren zur Herstellung eines Flaechengleichrichters oder Flaechentransistors |
DE1153119B (de) * | 1955-08-05 | 1963-08-22 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1212639B (de) * | 1954-07-01 | 1966-03-17 | Sperrschichtelektrodensystem, das einen halbleitenden einkristall aus germanium oder silizium enthaelt |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2575392A (en) * | 1947-12-11 | 1951-11-20 | Vickers Inc | Method of annealing a selenium coating |
US2599478A (en) * | 1948-03-15 | 1952-06-03 | Vickers Inc | Apparatus for making devices which have selenium as constituent parts thereof |
DE925847C (de) * | 1949-10-31 | 1955-03-31 | Licentia Gmbh | Verfahren zum Herstellen von Selengleichrichtern |
US2877284A (en) * | 1950-05-23 | 1959-03-10 | Rca Corp | Photovoltaic apparatus |
US2629039A (en) * | 1950-06-07 | 1953-02-17 | Weston Electrical Instr Corp | Selenium cell and process for manufacturing the same |
US2644915A (en) * | 1950-07-24 | 1953-07-07 | Bell Telephone Labor Inc | Selenium rectifier and method of its production |
DE976655C (de) * | 1951-11-24 | 1964-01-30 | Francois Gans | Verfahren zur Herstellung von Photowiderstandszellen aus Pulvern von Cadmiumsulfid, Cadmiumselenid oder Cadmiumtellurid |
US2795033A (en) * | 1952-01-31 | 1957-06-11 | Raytheon Mfg Co | Molded cathodes |
NL178572B (nl) * | 1952-06-19 | Vaw Ver Aluminium Werke Ag | Werkwijze voor het vloeimiddelvrij solderen van aluminium materialen. | |
DE1068818B (de) * | 1954-06-16 | 1959-11-12 | ||
US2903666A (en) * | 1955-08-23 | 1959-09-08 | Speer Carbon Company | Resistors with integral molded metal terminals |
NL263391A (de) * | 1960-06-21 | |||
US3148981A (en) * | 1961-04-21 | 1964-09-15 | Nat Beryllia Corp | Metal-oxide gradient ceramic bodies |
US3243862A (en) * | 1961-10-24 | 1966-04-05 | Westinghouse Electric Corp | Method of making semiconductor devices |
US3214651A (en) * | 1961-10-27 | 1965-10-26 | Westinghouse Electric Corp | Semiconductor device base electrode assembly and process for producing the same |
US3432365A (en) * | 1963-02-07 | 1969-03-11 | North American Rockwell | Composite thermoelectric assembly having preformed intermediate layers of graded composition |
US4244722A (en) * | 1977-12-09 | 1981-01-13 | Noboru Tsuya | Method for manufacturing thin and flexible ribbon of dielectric material having high dielectric constant |
DE2856795C2 (de) * | 1977-12-30 | 1984-12-06 | Noboru Prof. Sendai Tsuya | Verwendung einer Stahlschmelze für ein Verfahren zum Stranggießen eines dünnen Bandes |
US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
SE448381B (sv) * | 1978-09-19 | 1987-02-16 | Tsuya Noboru | Sett att framstella ett tunt band av kiselstal, tunt kiselstalband och anvendning av dylikt |
DE3035563C2 (de) * | 1980-09-20 | 1984-10-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer polykristallinen Silizium-Solarzelle |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2342278A (en) * | 1944-02-22 | Manufacturing selenium cells | ||
US1826955A (en) * | 1927-03-30 | 1931-10-13 | Ruben Rectifier Corp | Electric current rectifier |
US1678826A (en) * | 1927-04-26 | 1928-07-31 | Ruben Rectifier Corp | Electric-current rectifier |
US1896853A (en) * | 1930-09-22 | 1933-02-07 | Gen Electric | Welding process |
NL46218C (de) * | 1936-06-20 | 1900-01-01 | ||
NL53994C (de) * | 1937-06-25 | 1900-01-01 | ||
US2267954A (en) * | 1939-05-17 | 1941-12-30 | Bell Telephone Labor Inc | Electrically conductive device |
US2325071A (en) * | 1940-11-30 | 1943-07-27 | Indium Corp America | Bearing and like article |
-
0
- BE BE459936D patent/BE459936A/xx unknown
- NL NL69281D patent/NL69281C/xx active
- NL NL136384D patent/NL136384B/xx unknown
- BE BE461663D patent/BE461663A/xx unknown
-
1943
- 1943-05-01 US US485384A patent/US2364642A/en not_active Expired - Lifetime
-
1944
- 1944-04-29 US US533426A patent/US2462906A/en not_active Expired - Lifetime
- 1944-05-01 GB GB8159/44A patent/GB578208A/en not_active Expired
-
1945
- 1945-03-30 GB GB8130/45A patent/GB596404A/en not_active Expired
- 1945-04-28 CH CH247861D patent/CH247861A/de unknown
- 1945-07-31 FR FR940901D patent/FR940901A/fr not_active Expired
- 1945-09-29 FR FR915182D patent/FR915182A/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1015542B (de) * | 1939-01-22 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Herstellung von Selengleichrichterplatten |
US2749489A (en) * | 1950-12-04 | 1956-06-05 | Int Standard Electric Corp | Dry contact rectifiers |
DE1055131B (de) * | 1952-04-19 | 1959-04-16 | Ibm Deutschland | Verfahren zur Herstellung von pn-Schichten in Halbleitern nach der Pulverschmelz-Methode |
DE1027799B (de) * | 1952-12-05 | 1958-04-10 | Standard Elektrik Ag | Geheizte Pressvorrichtung zur Herstellung von Selengleichrichtern und Selenphotoelementen |
DE975179C (de) * | 1952-12-31 | 1961-09-21 | Rca Corp | Verfahren zur Herstellung eines Flaechengleichrichters oder Flaechentransistors |
DE1212639B (de) * | 1954-07-01 | 1966-03-17 | Sperrschichtelektrodensystem, das einen halbleitenden einkristall aus germanium oder silizium enthaelt | |
DE1153119B (de) * | 1955-08-05 | 1963-08-22 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
GB596404A (en) | 1948-01-02 |
US2462906A (en) | 1949-03-01 |
NL136384B (de) | 1900-01-01 |
BE461663A (de) | 1900-01-01 |
BE459936A (de) | 1900-01-01 |
NL69281C (de) | 1900-01-01 |
FR915182A (fr) | 1946-10-29 |
GB578208A (en) | 1946-06-19 |
US2364642A (en) | 1944-12-12 |
FR940901A (fr) | 1948-12-28 |
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