DE10335618A1 - Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers - Google Patents
Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers Download PDFInfo
- Publication number
- DE10335618A1 DE10335618A1 DE10335618A DE10335618A DE10335618A1 DE 10335618 A1 DE10335618 A1 DE 10335618A1 DE 10335618 A DE10335618 A DE 10335618A DE 10335618 A DE10335618 A DE 10335618A DE 10335618 A1 DE10335618 A1 DE 10335618A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- temperature
- dependent
- leakage currents
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4068—Voltage or leakage in refresh operations
Abstract
Die Erfindung betrifft einen Halbleiterspeicher (1) mit Speicherzellen (2), die Speicherkondensatoren sowie Transistoren mit einer Elektrode aufweisen, die zum Öffnen und zum Sperren des Transistors mit zwei unterschiedlichen elektrischen Potentialen (V1, V2) elektrisch vorspannbar ist. Erfindungsgemäß ist vorgesehen, daß das für den sperrenden Zustand des Transistors vorgesehene Elektrodenpotential (V2) ein temperaturabhängigen Potential ist, dessen Höhe der Halbleiterspeicher (1) temperaturabhängig reguliert. Ein temperaturabhängig veränderbares Wortleitungspotential verringert bei sperrendem Transistor eine durch Leckströme verursachte Entladung der Speicherzellen (2). Im Gegensatz zu herkömmlichen Bemühungen, diese Leckströme durch veränderte Speicherzellengeometrien einzudämmen, erlaubt die erfindungsgemäße Regulierung des Elektrodenpotentials eine differenziertere, weil temperaturabhängige Minimierung von Leckströmen.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10335618A DE10335618B4 (de) | 2003-08-04 | 2003-08-04 | Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers |
US10/911,230 US7120074B2 (en) | 2003-08-04 | 2004-08-04 | Semiconductor memory and method for operating a semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10335618A DE10335618B4 (de) | 2003-08-04 | 2003-08-04 | Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10335618A1 true DE10335618A1 (de) | 2005-03-10 |
DE10335618B4 DE10335618B4 (de) | 2005-12-08 |
Family
ID=34177285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10335618A Expired - Fee Related DE10335618B4 (de) | 2003-08-04 | 2003-08-04 | Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers |
Country Status (2)
Country | Link |
---|---|
US (1) | US7120074B2 (de) |
DE (1) | DE10335618B4 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101642909B1 (ko) | 2010-05-19 | 2016-08-11 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템 |
KR101938659B1 (ko) * | 2012-02-29 | 2019-01-15 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것을 포함한 메모리 시스템 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002627A (en) * | 1997-06-17 | 1999-12-14 | Micron Technology, Inc. | Integrated circuit with temperature detector |
US6016281A (en) * | 1997-12-17 | 2000-01-18 | Siemens Aktiengesellschaft | Memory with word line voltage control |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198995A (en) * | 1990-10-30 | 1993-03-30 | International Business Machines Corporation | Trench-capacitor-one-transistor storage cell and array for dynamic random access memories |
KR100281600B1 (ko) * | 1993-01-07 | 2001-03-02 | 가나이 쓰도무 | 전력저감 기구를 가지는 반도체 집적회로 |
US5650976A (en) * | 1993-05-14 | 1997-07-22 | Micron Technology, Inc. | Dual strobed negative pumped wordlines for dynamic random access memories |
US6198670B1 (en) * | 1999-06-22 | 2001-03-06 | Micron Technology, Inc. | Bias generator for a four transistor load less memory cell |
JP2001052476A (ja) * | 1999-08-05 | 2001-02-23 | Mitsubishi Electric Corp | 半導体装置 |
US6205074B1 (en) * | 2000-02-29 | 2001-03-20 | Advanced Micro Devices, Inc. | Temperature-compensated bias generator |
DE10345469A1 (de) * | 2003-09-30 | 2005-05-12 | Infineon Technologies Ag | Schaltungsanordnung zur Einstellung einer Spannungsversorgung für einen Testbetrieb eines integrierten Speichers |
US7009904B2 (en) * | 2003-11-19 | 2006-03-07 | Infineon Technologies Ag | Back-bias voltage generator with temperature control |
-
2003
- 2003-08-04 DE DE10335618A patent/DE10335618B4/de not_active Expired - Fee Related
-
2004
- 2004-08-04 US US10/911,230 patent/US7120074B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002627A (en) * | 1997-06-17 | 1999-12-14 | Micron Technology, Inc. | Integrated circuit with temperature detector |
US6016281A (en) * | 1997-12-17 | 2000-01-18 | Siemens Aktiengesellschaft | Memory with word line voltage control |
Also Published As
Publication number | Publication date |
---|---|
US7120074B2 (en) | 2006-10-10 |
US20050057982A1 (en) | 2005-03-17 |
DE10335618B4 (de) | 2005-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
R081 | Change of applicant/patentee |
Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE |
|
R081 | Change of applicant/patentee |
Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |