DE1033333B - Transistor mit einer zweiten Emitterelektrode - Google Patents
Transistor mit einer zweiten EmitterelektrodeInfo
- Publication number
- DE1033333B DE1033333B DEI8651A DEI0008651A DE1033333B DE 1033333 B DE1033333 B DE 1033333B DE I8651 A DEI8651 A DE I8651A DE I0008651 A DEI0008651 A DE I0008651A DE 1033333 B DE1033333 B DE 1033333B
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- emitter
- collector
- transistor
- emitter electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1108124XA | 1953-05-14 | 1953-05-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1033333B true DE1033333B (de) | 1958-07-03 |
Family
ID=22335073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEI8651A Pending DE1033333B (de) | 1953-05-14 | 1954-05-13 | Transistor mit einer zweiten Emitterelektrode |
Country Status (3)
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1200579B (de) * | 1961-04-21 | 1965-09-09 | Ibm | Binaeres Verknuepfungsglieder-Schaltnetz und Verfahren zu dessen Herstellung |
DE1214806B (de) * | 1959-12-18 | 1966-04-21 | Ibm | Photoempfindlicher Feld-Effekt-Unipolar-transistor und seine Betriebsschaltung |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE494827A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-03-31 | |||
BE505195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-01 | |||
BE502674A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-04-21 | 1900-01-01 | ||
GB681810A (en) * | 1949-04-01 | 1952-10-29 | Standard Telephones Cables Ltd | Improvements in or relating to crystal triodes |
US2629802A (en) * | 1951-12-07 | 1953-02-24 | Rca Corp | Photocell amplifier construction |
-
0
- NL NL97560D patent/NL97560C/xx active
- NL NL187425D patent/NL187425A/xx unknown
-
1954
- 1954-05-04 FR FR1108124D patent/FR1108124A/fr not_active Expired
- 1954-05-13 DE DEI8651A patent/DE1033333B/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE494827A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-03-31 | |||
BE505195A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-01 | |||
GB681810A (en) * | 1949-04-01 | 1952-10-29 | Standard Telephones Cables Ltd | Improvements in or relating to crystal triodes |
BE502674A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1950-04-21 | 1900-01-01 | ||
US2629802A (en) * | 1951-12-07 | 1953-02-24 | Rca Corp | Photocell amplifier construction |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1214806B (de) * | 1959-12-18 | 1966-04-21 | Ibm | Photoempfindlicher Feld-Effekt-Unipolar-transistor und seine Betriebsschaltung |
DE1200579B (de) * | 1961-04-21 | 1965-09-09 | Ibm | Binaeres Verknuepfungsglieder-Schaltnetz und Verfahren zu dessen Herstellung |
Also Published As
Publication number | Publication date |
---|---|
NL187425A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
NL97560C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
FR1108124A (fr) | 1956-01-09 |
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