GB681810A - Improvements in or relating to crystal triodes - Google Patents

Improvements in or relating to crystal triodes

Info

Publication number
GB681810A
GB681810A GB890649A GB890649A GB681810A GB 681810 A GB681810 A GB 681810A GB 890649 A GB890649 A GB 890649A GB 890649 A GB890649 A GB 890649A GB 681810 A GB681810 A GB 681810A
Authority
GB
United Kingdom
Prior art keywords
distance
emitter
collector
disc
point contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB890649A
Inventor
Charles De Boismaison White
Kenneth Albert Matthews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB890649A priority Critical patent/GB681810A/en
Publication of GB681810A publication Critical patent/GB681810A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

681,810. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. March 10, 1950 [April 1, 1949], No. 8906/49. Class 40 (iv). [Also in Group XL (c)] An electric amplifying device comprises a semiconductor body having two surface contacts spaced apart by less than the critical distance necessary to ensure that current carriers from the emitter are collected by the collector, and a cat's-whisker electrode in contact with the body at a distance from either of the said contacts greater than this critical distance. Fig. 1 shows an amplifier circuit in which a semi-conductor body 1 is provided with an emitter 3 and collector 4, which are separated by a small distance such as 0.001 inch. An additional point contact 5 is provided spaced at a greater distance, such as 0.015 inch, from the other electrodes, and which serves as the common connection for the input and output circuits and thus corresponds in function to that of the base electrode in previous transistor circuits. An additional low resistance contact 2 may also be provided on the base of the semiconductor body. An alternative arrangement is described in which the emitter and collector electrodes are on opposite sides of a thin disc, and the third connection is provided by a point contact situated on the edge of the disc. The disc is housed in a hollow tube. The invention results in improved amplification which may be due to the introduction of positive feedback by the additional point contact. Reference is made to Specification 681,809, and the Provisional Specification refers to Specification 681,829.
GB890649A 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes Expired GB681810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB890649A GB681810A (en) 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB890649A GB681810A (en) 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes

Publications (1)

Publication Number Publication Date
GB681810A true GB681810A (en) 1952-10-29

Family

ID=9861600

Family Applications (1)

Application Number Title Priority Date Filing Date
GB890649A Expired GB681810A (en) 1949-04-01 1949-04-01 Improvements in or relating to crystal triodes

Country Status (1)

Country Link
GB (1) GB681810A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1033333B (en) * 1953-05-14 1958-07-03 Ibm Deutschland Transistor with a second emitter electrode
DE1067471B (en) * 1953-12-31 1959-10-22 Ibm Deutschland Bistable amplifier circuit with a tip transistor, which has a rectifying and a non-rectifying base electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1033333B (en) * 1953-05-14 1958-07-03 Ibm Deutschland Transistor with a second emitter electrode
DE1067471B (en) * 1953-12-31 1959-10-22 Ibm Deutschland Bistable amplifier circuit with a tip transistor, which has a rectifying and a non-rectifying base electrode

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