GB681829A - Improvements in or relating to amplifiers employing semi-conductors - Google Patents
Improvements in or relating to amplifiers employing semi-conductorsInfo
- Publication number
- GB681829A GB681829A GB604149A GB604149A GB681829A GB 681829 A GB681829 A GB 681829A GB 604149 A GB604149 A GB 604149A GB 604149 A GB604149 A GB 604149A GB 681829 A GB681829 A GB 681829A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- electrodes
- collector
- electrode
- controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 235000012469 Cleome gynandra Nutrition 0.000 abstract 2
- 240000007918 Tacca chantrieri Species 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
Abstract
681,829. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. March 10, 1950 [April 1, 1949], No. 6041/50. Divided out of 681,810. Class 40 (iv). [Also in Group XL (c)] An electric amplifying circuit comprises a semi-conductor body 1 having emitter 3, collector 4 and base 2 electrodes, and an additional cat's-whisker controller electrode 5 in contact with the semi-conductor surface at a distance from the collector and emitter electrodes which exceeds the distance between these electrodes, the controller electrode 5 being biased in the same direction as the emitter and spaced such that the gain can be adjusted by varying the controller current. The emitter is biased in the good conducting direction, and the collector is biased in the reverse direction, the input circuit being connected between the emitter 3 and base 2 electrodes, and the output circuit between the collector 4 and base 2 electrodes. The arrangement increases the amplification of the device. A variable resistance 11 may be included to control the current in the controller electrode circuit, which serves to control the amplification and the input and output impedances of the device. The controller electrode may be displaced in the direction normal to the line joining the emitter and collector electrodes. The base electrode may be provided by an additional cat's-whisker electrode as described in Specification 681,810. Specification 681,809 also is referred to.
Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE558880D BE558880A (en) | 1949-04-01 | ||
BE505195D BE505195A (en) | 1949-04-01 | ||
NL7512441.A NL162732B (en) | 1949-04-01 | GAS HEATED STEAM BOILER. | |
US152302A US2701281A (en) | 1949-04-01 | 1950-03-28 | Amplifier employing semiconductor |
GB21041/50A GB692802A (en) | 1949-04-01 | 1950-08-25 | Improvements in or relating to electric trigger circuits |
FR1033789D FR1033789A (en) | 1949-04-01 | 1951-03-09 | Triodes using crystals such as germanium crystals |
FR61931D FR61931E (en) | 1949-04-01 | 1951-07-26 | Triodes using crystals such as germanium crystals |
CH316530D CH316530A (en) | 1949-04-01 | 1951-08-09 | Two-position tripping electrical circuit |
US243557A US2624016A (en) | 1949-04-01 | 1951-08-24 | Electric trigger circuits |
DEJ4541A DE939699C (en) | 1949-04-01 | 1951-08-25 | Bistable multivibrator with crystal triode |
US472109A US2918627A (en) | 1949-04-01 | 1954-11-30 | Temperature-compensated directcurrent amplifier |
FR69045D FR69045E (en) | 1949-04-01 | 1955-11-29 | Triodes using crystals such as germanium crystals |
FR70708D FR70708E (en) | 1949-04-01 | 1956-01-26 | Triodes using crystals such as germanium crystals |
US595378A US2830257A (en) | 1949-04-01 | 1956-07-02 | Temperature-compensated directcurrent transistor amplifier |
FR72080D FR72080E (en) | 1949-04-01 | 1957-06-28 | Triodes using crystals such as germanium crystals |
GB20481/57A GB809214A (en) | 1949-04-01 | 1957-06-28 | Temperature-compensated direct-current amplifier |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB21041/50A GB692802A (en) | 1949-04-01 | 1950-08-25 | Improvements in or relating to electric trigger circuits |
US472109A US2918627A (en) | 1949-04-01 | 1954-11-30 | Temperature-compensated directcurrent amplifier |
US595378A US2830257A (en) | 1949-04-01 | 1956-07-02 | Temperature-compensated directcurrent transistor amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
GB681829A true GB681829A (en) | 1952-10-29 |
Family
ID=27258989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB604149A Expired GB681829A (en) | 1949-04-01 | 1949-04-01 | Improvements in or relating to amplifiers employing semi-conductors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB681829A (en) |
-
1949
- 1949-04-01 GB GB604149A patent/GB681829A/en not_active Expired
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