DE10291108D2 - Halbleiter mit einem semimagnetischen Kontakt - Google Patents

Halbleiter mit einem semimagnetischen Kontakt

Info

Publication number
DE10291108D2
DE10291108D2 DE10291108T DE10291108T DE10291108D2 DE 10291108 D2 DE10291108 D2 DE 10291108D2 DE 10291108 T DE10291108 T DE 10291108T DE 10291108 T DE10291108 T DE 10291108T DE 10291108 D2 DE10291108 D2 DE 10291108D2
Authority
DE
Germany
Prior art keywords
semi
semiconductor
magnetic contact
magnetic
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10291108T
Other languages
English (en)
Other versions
DE10291108B4 (de
Inventor
Laurens Molenkamp
Georg Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10291108T priority Critical patent/DE10291108B4/de
Application granted granted Critical
Publication of DE10291108D2 publication Critical patent/DE10291108D2/de
Publication of DE10291108B4 publication Critical patent/DE10291108B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Magnetic Heads (AREA)
DE10291108T 2001-03-20 2002-03-19 Magnetoresistives Halbleiterbauelement mit einem semimagnetischen Kontakt, sowie Speicherelement und magnetischer Sensor Expired - Fee Related DE10291108B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE10291108T DE10291108B4 (de) 2001-03-20 2002-03-19 Magnetoresistives Halbleiterbauelement mit einem semimagnetischen Kontakt, sowie Speicherelement und magnetischer Sensor

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE10113495.9 2001-03-20
DE10113495 2001-03-20
DE10114963A DE10114963A1 (de) 2001-03-20 2001-03-27 Halbleiterelement mit einem semimagnetischen Kontakt
DE10114963.8 2001-03-27
PCT/DE2002/000989 WO2002075344A2 (de) 2001-03-20 2002-03-19 Halbleiterelement mit einem semimagnetischen kontakt
DE10291108T DE10291108B4 (de) 2001-03-20 2002-03-19 Magnetoresistives Halbleiterbauelement mit einem semimagnetischen Kontakt, sowie Speicherelement und magnetischer Sensor

Publications (2)

Publication Number Publication Date
DE10291108D2 true DE10291108D2 (de) 2004-04-15
DE10291108B4 DE10291108B4 (de) 2009-11-26

Family

ID=26008839

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10114963A Withdrawn DE10114963A1 (de) 2001-03-20 2001-03-27 Halbleiterelement mit einem semimagnetischen Kontakt
DE10291108T Expired - Fee Related DE10291108B4 (de) 2001-03-20 2002-03-19 Magnetoresistives Halbleiterbauelement mit einem semimagnetischen Kontakt, sowie Speicherelement und magnetischer Sensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10114963A Withdrawn DE10114963A1 (de) 2001-03-20 2001-03-27 Halbleiterelement mit einem semimagnetischen Kontakt

Country Status (7)

Country Link
US (1) US6963096B2 (de)
JP (1) JP4058344B2 (de)
KR (1) KR100583688B1 (de)
CN (1) CN100390561C (de)
DE (2) DE10114963A1 (de)
TW (1) TW571450B (de)
WO (1) WO2002075344A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598555B1 (en) 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
US7274080B1 (en) * 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7252852B1 (en) 2003-12-12 2007-08-07 International Business Machines Corporation Mg-Zn oxide tunnel barriers and method of formation
FR2871280A1 (fr) * 2004-06-03 2005-12-09 Spintron Sa Memoire magnetique a canal de confinement
US7357995B2 (en) 2004-07-02 2008-04-15 International Business Machines Corporation Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
US7270896B2 (en) 2004-07-02 2007-09-18 International Business Machines Corporation High performance magnetic tunnel barriers with amorphous materials
JP2006086476A (ja) * 2004-09-17 2006-03-30 Toshiba Corp 磁気記録素子および磁気記録装置
US7300711B2 (en) 2004-10-29 2007-11-27 International Business Machines Corporation Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials
US7351483B2 (en) 2004-11-10 2008-04-01 International Business Machines Corporation Magnetic tunnel junctions using amorphous materials as reference and free layers
US7626236B2 (en) * 2005-06-28 2009-12-01 Purdue Research Foundation Transistor including paramagnetic impurities and having anti-parallel ferromagnetic contacts
US8669762B2 (en) * 2008-02-13 2014-03-11 University Of Delaware Electromagnetic wave detection methods and apparatus
JP2009200351A (ja) * 2008-02-22 2009-09-03 Tdk Corp 半導体スピンデバイス及びスピンｆｅｔ
DE102008026241B4 (de) * 2008-05-30 2016-12-01 Johannes-Gutenberg-Universität Mainz Inhomogene Verbindungen mit hohem Magnetwiderstand und Verwendung
KR101598542B1 (ko) * 2009-01-13 2016-02-29 삼성전자주식회사 스핀 전계효과 트랜지스터를 이용한 논리소자
JP2010199320A (ja) * 2009-02-25 2010-09-09 Tdk Corp シリコンスピン伝導素子の製造方法及びシリコンスピン伝導素子
US8941379B2 (en) * 2009-05-14 2015-01-27 University Of Delaware Electromagnetic wave detection systems and methods
CN102315255B (zh) * 2010-07-07 2013-10-16 中国科学院物理研究所 一种自旋场效应晶体管及其磁性存储器
US9136398B2 (en) * 2011-02-21 2015-09-15 Northwestern University Bipolar magnetic junction transistor with magnetoamplification and applications of same
EP2887403A4 (de) * 2012-08-14 2015-09-02 Japan Science & Tech Agency Spinpolarisationstransistorelement
DE102014203317A1 (de) 2014-02-25 2015-08-27 Robert Bosch Gmbh Sensorvorrichtung, Herstellungsverfahren für eine Sensorvorrichtung mit mindestens einem Magnetkern und Verfahren zum Ermitteln einer Feldstärke eines Magnetfelds in mindestens einer Raumrichtung
DE102017001963A1 (de) 2017-03-01 2018-09-06 Forschungsverbund Berlin E.V. Tunnelwiderstands-Bauelement und Verfahren zu dessen Herstellung
CN113176483B (zh) * 2020-01-09 2023-04-28 国家纳米科学中心 用于自旋场效应晶体管的自旋信号测量方法及系统
CN112799240B (zh) * 2020-12-30 2022-09-16 广东省科学院半导体研究所 磁光器件及其制作方法
US20220307865A1 (en) * 2021-03-24 2022-09-29 Analog Devices International Unlimited Company Magnetic sensor system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69331895T2 (de) * 1992-12-29 2002-12-19 Eastman Kodak Co Magnetoresistiver Magnetfeldsensor mit sehr langem Wirkbereich
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
JP3207094B2 (ja) * 1995-08-21 2001-09-10 松下電器産業株式会社 磁気抵抗効果素子及びメモリー素子
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5962905A (en) * 1996-09-17 1999-10-05 Kabushiki Kaisha Toshiba Magnetoresistive element
WO1998025263A1 (en) * 1996-12-02 1998-06-11 Koninklijke Philips Electronics N.V. Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
JP2924845B2 (ja) * 1997-03-24 1999-07-26 ティーディーケイ株式会社 スピンバルブ磁気抵抗素子を備えた磁気ヘッド及びその製造方法
JPH1187796A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 磁性半導体装置および磁性記録・再生装置
JP3646508B2 (ja) * 1998-03-18 2005-05-11 株式会社日立製作所 トンネル磁気抵抗効果素子、これを用いた磁気センサー及び磁気ヘッド
WO2000059052A2 (en) * 1999-03-29 2000-10-05 The Gillette Company Alkaline cell separator
FR2791814A1 (fr) * 1999-03-31 2000-10-06 Univ Pasteur Dispositif microelectronique a jonctions tunnel et reseau de memoires et capteur comprenant de tels dispositifs
JP4076197B2 (ja) * 1999-05-19 2008-04-16 株式会社東芝 磁性素子、記憶装置、磁気再生ヘッド、３端子素子、及び磁気ディスク装置
AU2002230791A1 (en) * 2000-10-26 2002-05-06 University Of Iowa Research Foundation Unipolar spin diode and transistor and the applications of the same

Also Published As

Publication number Publication date
US6963096B2 (en) 2005-11-08
DE10114963A1 (de) 2002-10-02
KR100583688B1 (ko) 2006-05-25
DE10291108B4 (de) 2009-11-26
WO2002075344A3 (de) 2002-11-14
CN1509413A (zh) 2004-06-30
WO2002075344A2 (de) 2002-09-26
US20040113188A1 (en) 2004-06-17
CN100390561C (zh) 2008-05-28
TW571450B (en) 2004-01-11
JP4058344B2 (ja) 2008-03-05
JP2004531881A (ja) 2004-10-14
KR20030093249A (ko) 2003-12-06

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee