DE1027800B - Verfahren zur Herstellung eines Transistors mit einem Halbleiterkoerper aus zwei Schichten - Google Patents
Verfahren zur Herstellung eines Transistors mit einem Halbleiterkoerper aus zwei SchichtenInfo
- Publication number
- DE1027800B DE1027800B DEW12314A DEW0012314A DE1027800B DE 1027800 B DE1027800 B DE 1027800B DE W12314 A DEW12314 A DE W12314A DE W0012314 A DEW0012314 A DE W0012314A DE 1027800 B DE1027800 B DE 1027800B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- electrode
- attached
- collector electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001055367 Dario Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US326312A US2767358A (en) | 1952-12-16 | 1952-12-16 | Semiconductor signal translating devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1027800B true DE1027800B (de) | 1958-04-10 |
Family
ID=23271698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEW12314A Pending DE1027800B (de) | 1952-12-16 | 1953-10-13 | Verfahren zur Herstellung eines Transistors mit einem Halbleiterkoerper aus zwei Schichten |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US2767358A (en, 2012) |
| BE (1) | BE524899A (en, 2012) |
| DE (1) | DE1027800B (en, 2012) |
| FR (1) | FR1095330A (en, 2012) |
| GB (1) | GB748925A (en, 2012) |
| NL (2) | NL183430C (en, 2012) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1093021B (de) * | 1959-01-24 | 1960-11-17 | Telefunken Gmbh | Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen |
| DE1101624B (de) * | 1958-06-27 | 1961-03-09 | Ibm Deutschland | Verfahren zur Herstellung einer Legierungselektrode an einer Halbleiteranordnung |
| DE1184869B (de) * | 1957-11-29 | 1965-01-07 | Comp Generale Electricite | Gesteuerter Halbleiter-Leistungsgleichrichter mit vier Zonen abwechselnden Leitungstyps |
| DE1208012B (de) * | 1959-08-06 | 1965-12-30 | Telefunken Patent | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2899652A (en) * | 1959-08-11 | Distance | ||
| BE529698A (en, 2012) * | 1953-06-19 | |||
| US2883313A (en) * | 1954-08-16 | 1959-04-21 | Rca Corp | Semiconductor devices |
| US2895058A (en) * | 1954-09-23 | 1959-07-14 | Rca Corp | Semiconductor devices and systems |
| US2843516A (en) * | 1954-11-08 | 1958-07-15 | Siemens Ag | Semiconductor junction rectifier |
| NL204025A (en, 2012) * | 1955-03-23 | |||
| US3193737A (en) * | 1955-05-18 | 1965-07-06 | Ibm | Bistable junction transistor |
| US2895109A (en) * | 1955-06-20 | 1959-07-14 | Bell Telephone Labor Inc | Negative resistance semiconductive element |
| US2921362A (en) * | 1955-06-27 | 1960-01-19 | Honeywell Regulator Co | Process for the production of semiconductor devices |
| DE1035780B (de) * | 1955-08-29 | 1958-08-07 | Ibm Deutschland | Transistor mit eigenleitender Zone |
| US2843515A (en) * | 1955-08-30 | 1958-07-15 | Raytheon Mfg Co | Semiconductive devices |
| DE1208010B (de) * | 1955-11-21 | 1965-12-30 | Siemens Ag | Flaechenhafter Halbleitergleichrichter |
| US2996918A (en) * | 1955-12-27 | 1961-08-22 | Ibm | Junction transistor thermostat |
| DE1101622B (de) * | 1956-01-03 | 1961-03-09 | Csf | Halbleiterdiode mit einem PI- oder NI-UEbergang im Halbleiterkoerper |
| NL100457C (en, 2012) * | 1956-01-03 | |||
| US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
| US2869084A (en) * | 1956-07-20 | 1959-01-13 | Bell Telephone Labor Inc | Negative resistance semiconductive device |
| US2878152A (en) * | 1956-11-28 | 1959-03-17 | Texas Instruments Inc | Grown junction transistors |
| US3162770A (en) * | 1957-06-06 | 1964-12-22 | Ibm | Transistor structure |
| FR1193194A (fr) * | 1958-03-12 | 1959-10-30 | Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions | |
| US3082131A (en) * | 1959-01-16 | 1963-03-19 | Texas Instruments Inc | Versatile transistor structure |
| US2989713A (en) * | 1959-05-11 | 1961-06-20 | Bell Telephone Labor Inc | Semiconductor resistance element |
| US3084078A (en) * | 1959-12-02 | 1963-04-02 | Texas Instruments Inc | High frequency germanium transistor |
| GB985864A (en) * | 1960-08-05 | 1965-03-10 | Telefunken Patent | A semiconductor device |
| US3231793A (en) * | 1960-10-19 | 1966-01-25 | Merck & Co Inc | High voltage rectifier |
| US3244949A (en) * | 1962-03-16 | 1966-04-05 | Fairchild Camera Instr Co | Voltage regulator |
| US3398334A (en) * | 1964-11-23 | 1968-08-20 | Itt | Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions |
| US3421057A (en) * | 1965-08-23 | 1969-01-07 | Ibm | High speed switching transistor and fabrication method therefor |
| JPS4828114B1 (en, 2012) * | 1966-10-29 | 1973-08-29 | ||
| US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| US2623105A (en) * | 1951-09-21 | 1952-12-23 | Bell Telephone Labor Inc | Semiconductor translating device having controlled gain |
-
0
- NL NL91725D patent/NL91725C/xx active
- NL NLAANVRAGE7613182,A patent/NL183430C/xx active
- US US24872D patent/USRE24872E/en not_active Expired
- BE BE524899D patent/BE524899A/xx unknown
-
1952
- 1952-12-16 US US326312A patent/US2767358A/en not_active Expired - Lifetime
-
1953
- 1953-09-11 FR FR1095330D patent/FR1095330A/fr not_active Expired
- 1953-10-13 DE DEW12314A patent/DE1027800B/de active Pending
- 1953-11-25 GB GB32720/53A patent/GB748925A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1184869B (de) * | 1957-11-29 | 1965-01-07 | Comp Generale Electricite | Gesteuerter Halbleiter-Leistungsgleichrichter mit vier Zonen abwechselnden Leitungstyps |
| DE1101624B (de) * | 1958-06-27 | 1961-03-09 | Ibm Deutschland | Verfahren zur Herstellung einer Legierungselektrode an einer Halbleiteranordnung |
| DE1093021B (de) * | 1959-01-24 | 1960-11-17 | Telefunken Gmbh | Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen |
| DE1208012B (de) * | 1959-08-06 | 1965-12-30 | Telefunken Patent | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
| DE1208012C2 (de) * | 1959-08-06 | 1966-10-20 | Telefunken Patent | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1095330A (fr) | 1955-06-01 |
| GB748925A (en) | 1956-05-16 |
| US2767358A (en) | 1956-10-16 |
| NL183430C (nl) | |
| USRE24872E (en) | 1960-09-27 |
| NL91725C (en, 2012) | |
| BE524899A (en, 2012) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1027800B (de) | Verfahren zur Herstellung eines Transistors mit einem Halbleiterkoerper aus zwei Schichten | |
| DE69232185T2 (de) | Tunneleffektanordnung mit drei Elektroden | |
| DE2312414C2 (de) | Verfahren zur Herstellung von integrierten MOSFET-Schaltkreisen | |
| DE3136682C2 (en, 2012) | ||
| DE1564411C3 (de) | Feldeffekt-Transistor | |
| DE1537263A1 (de) | Transistortreiberschaltung mit kapazitiver Rueckkopplung | |
| DE1024119B (de) | Bistabile Gedaechtniseinrichtung mit einem halbleitenden Koerper | |
| DE1279196B (de) | Flaechentransistor | |
| DE2712533C3 (de) | Abschaltbarer Thyrisator | |
| DE102016103243A1 (de) | Halbleitereinrichtung und verfahren zum herstellten derselben | |
| DE1295699B (de) | Schaltbares Halbleiterbauelement | |
| DE1437435B2 (de) | Hochfrequenzverstärker mit Feldeffekttransistor | |
| DE69117866T2 (de) | Heteroübergangsfeldeffekttransistor | |
| DE2719219C2 (de) | Mit Hilfe einer Steuerelektrode abschaltbare Thyristortriode | |
| EP0000863A1 (de) | Temperaturkompensierter integrierter Halbleiterwiderstand | |
| DE2130457C2 (de) | Planares Halbleiterbauelement | |
| DE2736324C2 (de) | Logische Verknüpfungsschaltung | |
| DE1166340B (de) | Halbleiteranordnung aus mit Aktivatoren dotiertem kristallinem Material und mit zweiohmschen Kontaktelektroden | |
| DE1123402B (de) | Halbleiterdiode mit mehreren PN-UEbergaengen | |
| DE1300993B (de) | Elektronisches Duennschichtbauelement | |
| DE1639041A1 (de) | Halbleiter-Verstaerker unter Verwendung einer Feldeffekt-Modulierung der Tunnelwirkung | |
| EP0065174B1 (de) | Verfahren zum Betrieb eines Thyristors mit steuerbaren Emitterkurzschlüssen | |
| DE3406437A1 (de) | Kondensatorelement mit einstellbarer kapazitaet | |
| DE2705183A1 (de) | Auf einem monolithischen substrat ausgebildeter darlington transistor | |
| DE1274738B (de) | Integrierte Halbleiterschaltung zum Nachbilden einer Induktivitaet |