DE10233526A1 - Bandabstands-Referenzschaltung - Google Patents
Bandabstands-Referenzschaltung Download PDFInfo
- Publication number
- DE10233526A1 DE10233526A1 DE10233526A DE10233526A DE10233526A1 DE 10233526 A1 DE10233526 A1 DE 10233526A1 DE 10233526 A DE10233526 A DE 10233526A DE 10233526 A DE10233526 A DE 10233526A DE 10233526 A1 DE10233526 A1 DE 10233526A1
- Authority
- DE
- Germany
- Prior art keywords
- current
- differential amplifier
- transistor
- reference circuit
- bandgap reference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000010079 rubber tapping Methods 0.000 claims description 6
- 230000001419 dependent effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000001629 suppression Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10233526A DE10233526A1 (de) | 2002-07-23 | 2002-07-23 | Bandabstands-Referenzschaltung |
EP03787666A EP1523703B1 (de) | 2002-07-23 | 2003-07-15 | Bandabstands-referenzschaltung |
DE50312448T DE50312448D1 (de) | 2002-07-23 | 2003-07-15 | Bandabstands-referenzschaltung |
JP2004528373A JP4065274B2 (ja) | 2002-07-23 | 2003-07-15 | バンドギャップ基準回路 |
PCT/DE2003/002377 WO2004017153A1 (de) | 2002-07-23 | 2003-07-15 | Bandabstands-referenzschaltung |
CNB038176645A CN100435060C (zh) | 2002-07-23 | 2003-07-15 | 带隙参考电路 |
US11/041,611 US6972549B2 (en) | 2002-07-23 | 2005-01-24 | Bandgap reference circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10233526A DE10233526A1 (de) | 2002-07-23 | 2002-07-23 | Bandabstands-Referenzschaltung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10233526A1 true DE10233526A1 (de) | 2004-02-12 |
Family
ID=30128307
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10233526A Ceased DE10233526A1 (de) | 2002-07-23 | 2002-07-23 | Bandabstands-Referenzschaltung |
DE50312448T Expired - Lifetime DE50312448D1 (de) | 2002-07-23 | 2003-07-15 | Bandabstands-referenzschaltung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE50312448T Expired - Lifetime DE50312448D1 (de) | 2002-07-23 | 2003-07-15 | Bandabstands-referenzschaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6972549B2 (ja) |
EP (1) | EP1523703B1 (ja) |
JP (1) | JP4065274B2 (ja) |
CN (1) | CN100435060C (ja) |
DE (2) | DE10233526A1 (ja) |
WO (1) | WO2004017153A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1987710B (zh) * | 2005-12-23 | 2010-05-05 | 深圳市芯海科技有限公司 | 一种电压调整装置 |
TWI451697B (zh) * | 2006-05-03 | 2014-09-01 | Synopsys Inc | 極低功率類比補償電路 |
DE102006034560B4 (de) * | 2006-07-26 | 2012-04-26 | Infineon Technologies Ag | Verstärkerstufe, Operationsverstärker und Verfahren zur Signalverstärkung |
US7764059B2 (en) * | 2006-12-20 | 2010-07-27 | Semiconductor Components Industries L.L.C. | Voltage reference circuit and method therefor |
CN100465851C (zh) * | 2007-04-19 | 2009-03-04 | 复旦大学 | 一种带隙基准参考源 |
CN101770249B (zh) * | 2008-12-30 | 2013-06-05 | 联咏科技股份有限公司 | 低电压能带隙参考电路 |
US8324881B2 (en) * | 2010-04-21 | 2012-12-04 | Texas Instruments Incorporated | Bandgap reference circuit with sampling and averaging circuitry |
US8461912B1 (en) * | 2011-12-20 | 2013-06-11 | Atmel Corporation | Switched-capacitor, curvature-compensated bandgap voltage reference |
US9218014B2 (en) | 2012-10-25 | 2015-12-22 | Fairchild Semiconductor Corporation | Supply voltage independent bandgap circuit |
EP3021189B1 (en) * | 2014-11-14 | 2020-12-30 | ams AG | Voltage reference source and method for generating a reference voltage |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6278320B1 (en) * | 1999-12-16 | 2001-08-21 | National Semiconductor Corporation | Low noise high PSRR band-gap with fast turn-on time |
EP0895147B1 (en) * | 1997-07-29 | 2002-05-22 | Kabushiki Kaisha Toshiba | Reference voltage generation circuit and reference current generation circuit |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4349778A (en) * | 1981-05-11 | 1982-09-14 | Motorola, Inc. | Band-gap voltage reference having an improved current mirror circuit |
JPH087636B2 (ja) * | 1990-01-18 | 1996-01-29 | シャープ株式会社 | 半導体装置の電圧降下回路 |
EP0576774B1 (en) * | 1992-06-30 | 1999-09-15 | STMicroelectronics S.r.l. | Voltage regulator for memory devices |
US5686823A (en) * | 1996-08-07 | 1997-11-11 | National Semiconductor Corporation | Bandgap voltage reference circuit |
US5900773A (en) * | 1997-04-22 | 1999-05-04 | Microchip Technology Incorporated | Precision bandgap reference circuit |
US6150872A (en) * | 1998-08-28 | 2000-11-21 | Lucent Technologies Inc. | CMOS bandgap voltage reference |
CN1154032C (zh) * | 1999-09-02 | 2004-06-16 | 深圳赛意法微电子有限公司 | 预调节器、产生参考电压的电路和方法 |
JP2001320243A (ja) * | 2000-05-12 | 2001-11-16 | Sony Corp | バイアス回路およびこれを用いた無線通信装置 |
JP3519361B2 (ja) * | 2000-11-07 | 2004-04-12 | Necエレクトロニクス株式会社 | バンドギャップレファレンス回路 |
US6815941B2 (en) * | 2003-02-05 | 2004-11-09 | United Memories, Inc. | Bandgap reference circuit |
-
2002
- 2002-07-23 DE DE10233526A patent/DE10233526A1/de not_active Ceased
-
2003
- 2003-07-15 WO PCT/DE2003/002377 patent/WO2004017153A1/de active Application Filing
- 2003-07-15 CN CNB038176645A patent/CN100435060C/zh not_active Expired - Fee Related
- 2003-07-15 JP JP2004528373A patent/JP4065274B2/ja not_active Expired - Fee Related
- 2003-07-15 EP EP03787666A patent/EP1523703B1/de not_active Expired - Fee Related
- 2003-07-15 DE DE50312448T patent/DE50312448D1/de not_active Expired - Lifetime
-
2005
- 2005-01-24 US US11/041,611 patent/US6972549B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0895147B1 (en) * | 1997-07-29 | 2002-05-22 | Kabushiki Kaisha Toshiba | Reference voltage generation circuit and reference current generation circuit |
US6278320B1 (en) * | 1999-12-16 | 2001-08-21 | National Semiconductor Corporation | Low noise high PSRR band-gap with fast turn-on time |
Also Published As
Publication number | Publication date |
---|---|
CN100435060C (zh) | 2008-11-19 |
JP2005534124A (ja) | 2005-11-10 |
US6972549B2 (en) | 2005-12-06 |
EP1523703B1 (de) | 2010-02-24 |
JP4065274B2 (ja) | 2008-03-19 |
WO2004017153A1 (de) | 2004-02-26 |
CN1672110A (zh) | 2005-09-21 |
DE50312448D1 (de) | 2010-04-08 |
US20050184718A1 (en) | 2005-08-25 |
EP1523703A1 (de) | 2005-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8131 | Rejection |