DE102018210721A8 - Halbleitermodul, Verfahren zum Herstellen desselben und Vorrichtung zur Umwandlung elektrischer Leistung - Google Patents
Halbleitermodul, Verfahren zum Herstellen desselben und Vorrichtung zur Umwandlung elektrischer Leistung Download PDFInfo
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- DE102018210721A8 DE102018210721A8 DE102018210721.1A DE102018210721A DE102018210721A8 DE 102018210721 A8 DE102018210721 A8 DE 102018210721A8 DE 102018210721 A DE102018210721 A DE 102018210721A DE 102018210721 A8 DE102018210721 A8 DE 102018210721A8
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- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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JP2017210900A JP6881238B2 (ja) | 2017-10-31 | 2017-10-31 | 半導体モジュール、その製造方法及び電力変換装置 |
JP2017-210900 | 2017-10-31 |
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Publication Number | Publication Date |
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DE102018210721A1 DE102018210721A1 (de) | 2019-05-02 |
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Country | Link |
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US (1) | US10546800B2 (de) |
JP (1) | JP6881238B2 (de) |
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DE (1) | DE102018210721A1 (de) |
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DE102020203145B4 (de) | 2020-03-11 | 2023-02-09 | Vitesco Technologies GmbH | Leiterplattenanordnung |
JP7313315B2 (ja) * | 2020-05-19 | 2023-07-24 | 三菱電機株式会社 | 半導体装置の製造方法及び電力制御回路の製造方法 |
US11837518B2 (en) * | 2020-08-26 | 2023-12-05 | Texas Instruments Incorporated | Coated semiconductor dies |
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JP2022143295A (ja) * | 2021-03-17 | 2022-10-03 | 株式会社東芝 | 半導体装置 |
JP2022144711A (ja) * | 2021-03-19 | 2022-10-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP7484800B2 (ja) | 2021-04-08 | 2024-05-16 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US20070035019A1 (en) * | 2005-08-15 | 2007-02-15 | Semiconductor Components Industries, Llc. | Semiconductor component and method of manufacture |
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JPWO2011018973A1 (ja) * | 2009-08-11 | 2013-01-17 | アルプス電気株式会社 | Memsセンサパッケージ |
CN102347420A (zh) * | 2010-08-04 | 2012-02-08 | 展晶科技(深圳)有限公司 | 发光二极管制造方法 |
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WO2013021983A1 (ja) * | 2011-08-10 | 2013-02-14 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP2013041884A (ja) * | 2011-08-11 | 2013-02-28 | Furukawa Electric Co Ltd:The | 半導体装置 |
JP2013168545A (ja) * | 2012-02-16 | 2013-08-29 | Toyota Motor Corp | 導電性部材の接合方法 |
JP2014029897A (ja) * | 2012-07-31 | 2014-02-13 | Hitachi Ltd | 導電性接合体およびそれを用いた半導体装置 |
JP5975911B2 (ja) * | 2013-03-15 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2015142059A (ja) * | 2014-01-30 | 2015-08-03 | 株式会社日立製作所 | パワー半導体モジュール |
JP2016143685A (ja) * | 2015-01-30 | 2016-08-08 | 株式会社日立製作所 | 半導体モジュール |
DE112016000904T5 (de) * | 2015-02-25 | 2017-11-09 | Mitsubishi Electric Corporation | Leistungsmodul |
JP6300386B2 (ja) * | 2015-03-23 | 2018-03-28 | 株式会社日立製作所 | 半導体装置 |
JP6576108B2 (ja) | 2015-06-08 | 2019-09-18 | 三菱電機株式会社 | 電力用半導体装置 |
JP6819597B2 (ja) * | 2015-09-07 | 2021-01-27 | 昭和電工マテリアルズ株式会社 | 接合体及び半導体装置 |
JP2017210900A (ja) | 2016-05-24 | 2017-11-30 | スズキ株式会社 | 充電制御装置 |
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2017
- 2017-10-31 JP JP2017210900A patent/JP6881238B2/ja active Active
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2018
- 2018-04-12 US US15/951,235 patent/US10546800B2/en active Active
- 2018-06-29 DE DE102018210721.1A patent/DE102018210721A1/de active Pending
- 2018-10-26 CN CN201811261366.9A patent/CN109727960B/zh active Active
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DE102018210721A1 (de) | 2019-05-02 |
JP6881238B2 (ja) | 2021-06-02 |
CN109727960B (zh) | 2023-11-21 |
JP2019083283A (ja) | 2019-05-30 |
US10546800B2 (en) | 2020-01-28 |
CN109727960A (zh) | 2019-05-07 |
US20190131210A1 (en) | 2019-05-02 |
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