DE102016106119B4 - Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern - Google Patents

Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern Download PDF

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Publication number
DE102016106119B4
DE102016106119B4 DE102016106119.0A DE102016106119A DE102016106119B4 DE 102016106119 B4 DE102016106119 B4 DE 102016106119B4 DE 102016106119 A DE102016106119 A DE 102016106119A DE 102016106119 B4 DE102016106119 B4 DE 102016106119B4
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filter
energy
substrate
ion
implantation
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DE102016106119.0A
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German (de)
English (en)
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DE102016106119A1 (de
Inventor
Florian Krippendorf
Constantin Csato
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MI2 Factory GmbH
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MI2 Factory GmbH
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Priority to DE102016106119.0A priority Critical patent/DE102016106119B4/de
Application filed by MI2 Factory GmbH filed Critical MI2 Factory GmbH
Priority to EP25163764.1A priority patent/EP4546375A3/de
Priority to JP2019502159A priority patent/JP6831133B2/ja
Priority to CN202110225252.4A priority patent/CN113035676B/zh
Priority to PCT/EP2017/058018 priority patent/WO2017174597A1/de
Priority to EP17717106.3A priority patent/EP3440690B1/de
Priority to US16/090,521 priority patent/US10847338B2/en
Priority to EP25167441.2A priority patent/EP4553855A3/de
Priority to EP21183792.7A priority patent/EP3926658B1/de
Priority to CN201780029666.1A priority patent/CN109155228B/zh
Publication of DE102016106119A1 publication Critical patent/DE102016106119A1/de
Application granted granted Critical
Publication of DE102016106119B4 publication Critical patent/DE102016106119B4/de
Priority to US17/036,966 priority patent/US11183358B2/en
Priority to JP2021003936A priority patent/JP7134508B2/ja
Priority to US17/491,963 priority patent/US11837430B2/en
Priority to JP2022132936A priority patent/JP7384480B2/ja
Priority to US18/378,421 priority patent/US12080510B2/en
Priority to JP2023187393A priority patent/JP7572751B2/ja
Priority to US18/783,964 priority patent/US20250014854A1/en
Priority to JP2024174677A priority patent/JP7809377B2/ja
Priority to JP2026004510A priority patent/JP2026065111A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE102016106119.0A 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern Active DE102016106119B4 (de)

Priority Applications (19)

Application Number Priority Date Filing Date Title
DE102016106119.0A DE102016106119B4 (de) 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
JP2019502159A JP6831133B2 (ja) 2016-04-04 2017-04-04 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素
CN202110225252.4A CN113035676B (zh) 2016-04-04 2017-04-04 用于生产晶片的离子注入系统的能量过滤元件
PCT/EP2017/058018 WO2017174597A1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP25163764.1A EP4546375A3 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP17717106.3A EP3440690B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
US16/090,521 US10847338B2 (en) 2016-04-04 2017-04-04 Energy filter element for ion implantation systems for the use in the production of wafers
EP25167441.2A EP4553855A3 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
EP21183792.7A EP3926658B1 (de) 2016-04-04 2017-04-04 Energiefilterelement für ionenimplantationsanlagen für den einsatz in der produktion von wafern
CN201780029666.1A CN109155228B (zh) 2016-04-04 2017-04-04 用于生产晶片的离子注入系统的能量过滤元件
US17/036,966 US11183358B2 (en) 2016-04-04 2020-09-29 Energy filter element for ion implantation systems for the use in the production of wafers
JP2021003936A JP7134508B2 (ja) 2016-04-04 2021-01-14 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素
US17/491,963 US11837430B2 (en) 2016-04-04 2021-10-01 Energy filter element for ion implantation systems for the use in the production of wafers
JP2022132936A JP7384480B2 (ja) 2016-04-04 2022-08-24 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素
US18/378,421 US12080510B2 (en) 2016-04-04 2023-10-10 Energy filter element for ion implantation systems for the use in the production of wafers
JP2023187393A JP7572751B2 (ja) 2016-04-04 2023-11-01 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素
US18/783,964 US20250014854A1 (en) 2016-04-04 2024-07-25 Energy filter element for ion implantation systems for the use in the production of wafers
JP2024174677A JP7809377B2 (ja) 2016-04-04 2024-10-04 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素
JP2026004510A JP2026065111A (ja) 2016-04-04 2026-01-14 ウェハの製造に使用されるイオン注入システムのためのエネルギーフィルタ要素

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102016106119.0A DE102016106119B4 (de) 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern

Publications (2)

Publication Number Publication Date
DE102016106119A1 DE102016106119A1 (de) 2017-10-05
DE102016106119B4 true DE102016106119B4 (de) 2019-03-07

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DE102016106119.0A Active DE102016106119B4 (de) 2016-04-04 2016-04-04 Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern

Country Status (6)

Country Link
US (5) US10847338B2 (https=)
EP (4) EP3440690B1 (https=)
JP (6) JP6831133B2 (https=)
CN (2) CN113035676B (https=)
DE (1) DE102016106119B4 (https=)
WO (1) WO2017174597A1 (https=)

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LU101808B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh An ion implantation device comprising energy filter and additional heating element
LU101807B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh Ion implantation device with energy filter having additional thermal energy dissipation surface area
WO2022128594A1 (en) 2020-12-17 2022-06-23 mi2-factory GmbH Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filter
WO2022128593A1 (en) 2020-12-17 2022-06-23 mi2-factory GmbH Energy filter assembly for ion implantation system with at least one coupling element
WO2022180124A1 (en) 2021-02-24 2022-09-01 mi2-factory GmbH A computer-implemented method for the simulation of an energy-filtered ion implantation (efii)
WO2022180037A1 (en) 2021-02-24 2022-09-01 mi2-factory GmbH A computer-implemented method for the simulation of an energy-filtered ion implantation (efii) using an ion tunnel
DE102023103315B4 (de) 2023-02-10 2024-11-28 Ernst-Abbe-Hochschule Jena, Körperschaft des öffentlichen Rechts Messvorrichtung, Ionenimplantationsvorrichtung und Verfahren zur ladungsunabhängigen In-Situ-Dosismessung

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DE102016106119B4 (de) 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
DE102016122791B3 (de) * 2016-11-25 2018-05-30 mi2-factory GmbH Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements
EP3605555A4 (en) * 2017-03-22 2020-12-16 Japan Atomic Energy Agency FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, BEAM LINE DEVICE USING A FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, FILTER DEVICE USING A FUNCTIONAL MEMBRANE FOR ION BEAM TRANSMISSION, AND METHOD OF ADJUSTING A DEVICE FILTER
US10217654B1 (en) * 2018-02-12 2019-02-26 Varian Semiconductor Equipment Associates, Inc. Embedded features for interlocks using additive manufacturing
DE102018114667B3 (de) 2018-06-19 2019-09-19 Infineon Technologies Ag Ionenstrahl-moderatorvorrichtung, ionenstrahl-implantationsgerät und ionen-implantationsverfahren
DE102019112773B4 (de) * 2019-05-15 2023-11-30 mi2-factory GmbH Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat
DE102019120623B4 (de) * 2019-07-31 2024-01-25 mi2-factory GmbH Energiefilter zur Verwendung bei der Implantation von Ionen in ein Substrat
CN111634899B (zh) * 2020-06-14 2022-11-18 南开大学 一种基于金属-有机框架衍生合成碳包覆磷酸钛钾纳米花的制备方法
DE102020134222A1 (de) * 2020-12-18 2022-06-23 mi2-factory GmbH Verfahren zur Herstellung eines vorbehandelten Verbundsubstrats und vorbehandeltes Verbundsubstrat
US11569063B2 (en) 2021-04-02 2023-01-31 Applied Materials, Inc. Apparatus, system and method for energy spread ion beam
CN114758730B (zh) * 2022-01-05 2024-08-16 西安理工大学 等离子体活性粒子与绝缘材料表面作用的仿真方法
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LU101807B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh Ion implantation device with energy filter having additional thermal energy dissipation surface area
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WO2022128594A1 (en) 2020-12-17 2022-06-23 mi2-factory GmbH Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filter
WO2022128593A1 (en) 2020-12-17 2022-06-23 mi2-factory GmbH Energy filter assembly for ion implantation system with at least one coupling element
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DE102023103315B4 (de) 2023-02-10 2024-11-28 Ernst-Abbe-Hochschule Jena, Körperschaft des öffentlichen Rechts Messvorrichtung, Ionenimplantationsvorrichtung und Verfahren zur ladungsunabhängigen In-Situ-Dosismessung

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