DE102016012533A1 - Chemisch-mechanisches Polierverfahren - Google Patents

Chemisch-mechanisches Polierverfahren Download PDF

Info

Publication number
DE102016012533A1
DE102016012533A1 DE102016012533.0A DE102016012533A DE102016012533A1 DE 102016012533 A1 DE102016012533 A1 DE 102016012533A1 DE 102016012533 A DE102016012533 A DE 102016012533A DE 102016012533 A1 DE102016012533 A1 DE 102016012533A1
Authority
DE
Germany
Prior art keywords
polishing
amine
curing agent
substrate
initiated polyol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102016012533.0A
Other languages
German (de)
English (en)
Inventor
Bainian Qian
Yi Guo
Marty W. Degroot
George C. Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102016012533A1 publication Critical patent/DE102016012533A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
DE102016012533.0A 2015-10-30 2016-10-19 Chemisch-mechanisches Polierverfahren Withdrawn DE102016012533A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/927,704 US9484212B1 (en) 2015-10-30 2015-10-30 Chemical mechanical polishing method
US14/927,704 2015-10-30

Publications (1)

Publication Number Publication Date
DE102016012533A1 true DE102016012533A1 (de) 2017-05-04

Family

ID=57189269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016012533.0A Withdrawn DE102016012533A1 (de) 2015-10-30 2016-10-19 Chemisch-mechanisches Polierverfahren

Country Status (7)

Country Link
US (1) US9484212B1 (cg-RX-API-DMAC7.html)
JP (1) JP6849389B2 (cg-RX-API-DMAC7.html)
KR (1) KR20170054266A (cg-RX-API-DMAC7.html)
CN (1) CN106625031A (cg-RX-API-DMAC7.html)
DE (1) DE102016012533A1 (cg-RX-API-DMAC7.html)
FR (1) FR3043001A1 (cg-RX-API-DMAC7.html)
TW (1) TW201715016A (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180169827A1 (en) * 2016-12-16 2018-06-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows
CN106891246B (zh) * 2017-03-30 2019-05-07 湖北鼎龙控股股份有限公司 一种用于半导体、光学材料和磁性材料表面平坦化的化学机械抛光垫
JP2019050307A (ja) 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法
US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US10569384B1 (en) 2018-11-06 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
US10464188B1 (en) * 2018-11-06 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and polishing method
EP3947580A4 (en) * 2019-03-25 2022-12-14 CMC Materials, Inc. ADDITIVES TO IMPROVE PARTICLE DISPERSION FOR CMP SLURRY
US11772230B2 (en) 2021-01-21 2023-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith
KR102561824B1 (ko) 2021-06-02 2023-07-31 에스케이엔펄스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN120206314B (zh) * 2025-05-09 2025-09-05 河北同光半导体股份有限公司 一种大尺寸碳化硅衬底的化学机械抛光方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JP3925041B2 (ja) 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
US6649523B2 (en) 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP3826702B2 (ja) 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
CN100592474C (zh) 2001-11-13 2010-02-24 东洋橡胶工业株式会社 研磨垫及其制造方法
JP4039214B2 (ja) 2002-11-05 2008-01-30 Ｊｓｒ株式会社 研磨パッド
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20040224622A1 (en) 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
JP4475404B2 (ja) 2004-10-14 2010-06-09 Ｊｓｒ株式会社 研磨パッド
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
SG162797A1 (en) 2005-07-15 2010-07-29 Toyo Tire & Rubber Co Layered sheets and processes for producing the same
US20070037491A1 (en) 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
US7445847B2 (en) * 2006-05-25 2008-11-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
KR101181885B1 (ko) 2006-09-08 2012-09-11 도요 고무 고교 가부시키가이샤 연마 패드
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN102152232B (zh) 2007-01-15 2013-06-26 东洋橡胶工业株式会社 研磨垫及其制造方法
US7569268B2 (en) * 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7828634B2 (en) * 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
JP4593643B2 (ja) 2008-03-12 2010-12-08 東洋ゴム工業株式会社 研磨パッド
JP4897082B2 (ja) 2008-04-25 2012-03-14 トーヨーポリマー株式会社 ポリウレタン発泡体及び研磨パッド
US7820005B2 (en) * 2008-07-18 2010-10-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad manufacturing process
JP5393434B2 (ja) 2008-12-26 2014-01-22 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8257544B2 (en) * 2009-06-10 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having a low defect integral window
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
WO2011048889A1 (ja) * 2009-10-22 2011-04-28 日立化成工業株式会社 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
CN102601723B (zh) * 2011-01-20 2014-03-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件的研磨方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9144880B2 (en) 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
US9238296B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9233451B2 (en) * 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
US9238295B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical window polishing pad
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US8980749B1 (en) * 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259820B2 (en) * 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9064806B1 (en) * 2014-03-28 2015-06-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Soft and conditionable chemical mechanical polishing pad with window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9333620B2 (en) * 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9481070B2 (en) * 2014-12-19 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-stability polyurethane polishing pad

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
ASTM D1622
ASTM D1708-10
ASTM D2240
ASTM D412
ASTM-Testverfahren D4274-11

Also Published As

Publication number Publication date
JP6849389B2 (ja) 2021-03-24
JP2017139443A (ja) 2017-08-10
FR3043001A1 (fr) 2017-05-05
CN106625031A (zh) 2017-05-10
US9484212B1 (en) 2016-11-01
KR20170054266A (ko) 2017-05-17
TW201715016A (zh) 2017-05-01

Similar Documents

Publication Publication Date Title
DE102015006980A1 (de) Chemisch-Mechanisches Polierverfahren
DE102007024460B4 (de) Chemisch-mechanisches Polierkissen
DE102016007767A1 (de) Formulierung für eine verbundpolierschicht für ein chemisch-mechanisches polierkissen
TWI480123B (zh) 多功能研磨墊
DE102015007033A1 (de) Chemisch-mechanische Polierschichtformulierung mit Konditionierungstoleranz
DE102013018258A1 (de) Weiches und konditionierbares chemisch-mechanisches Polierkissen
JP6849389B2 (ja) ケミカルメカニカルポリッシング方法
DE102015004786A1 (de) Chemisch-mechanisches Polierkissen
DE102017008616A1 (de) Chemisch-mechanische Polierkissen mit hoher Planarisierungseffizienz und Verfahren zu deren Herstellung
DE102015003240A1 (de) Chemisch-mechanisches polierkissen mit polierschicht und fenster
DE102014015664A1 (de) Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern
DE102014007002A1 (de) Chemisch-mechanischer Mehrschicht-Polierkissenstapel mit weicher und konditionierbarer Polierschicht
DE102018004452A1 (de) Chemisch-mechanische Polierkissen für eine verbesserte Entfernungsgeschwindigkeit und Planarisierung
DE102016007772A1 (de) Verfahren zur Herstellung einer Verbundpolierschicht für ein chemisch-mechanisches Polierkissen
DE102015009512A1 (de) Polyurethan-Polierkissen
DE102015004927A1 (de) Chemisch-mechanisches Polierkissen mit transparentem Endpunkterfassungsfenster
DE102007024459A1 (de) Chemisch-mechanisches Polierkissen
DE102014007027A1 (de) Weiches und konditionierbares chemisch-mechanisches Fensterpolierkissen
DE102014007024A1 (de) Weicher und konditionierbarer chemisch-mechanischer Polierkissenstapel
DE102019007230A1 (de) Chemisch-mechanisches polierkissen und polierverfahren
DE102015003200A1 (de) Weiches und konditionierbares chemisch-mechanisches polierkissen mit fenster
DE602004010871T2 (de) Polierscheibe
DE102016007777A1 (de) Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens
DE102015016424A1 (de) CMP-Gießverfahren mit eingestellter Viskosität
DE102015016427A1 (de) Gießverfahren für ein CMP-Kissen mit eingestellter Expansion

Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee