DE102014217956B4 - Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat - Google Patents
Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat Download PDFInfo
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- DE102014217956B4 DE102014217956B4 DE102014217956.4A DE102014217956A DE102014217956B4 DE 102014217956 B4 DE102014217956 B4 DE 102014217956B4 DE 102014217956 A DE102014217956 A DE 102014217956A DE 102014217956 B4 DE102014217956 B4 DE 102014217956B4
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- 239000013078 crystal Substances 0.000 title claims abstract description 178
- 239000000758 substrate Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 35
- 230000012010 growth Effects 0.000 claims abstract description 190
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 110
- 239000000463 material Substances 0.000 claims abstract description 99
- 239000002019 doping agent Substances 0.000 claims abstract description 72
- 238000003860 storage Methods 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 58
- 239000012528 membrane Substances 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 29
- 238000000859 sublimation Methods 0.000 claims description 23
- 230000008022 sublimation Effects 0.000 claims description 23
- 239000002244 precipitate Substances 0.000 claims description 12
- 239000011148 porous material Substances 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 4
- 238000012258 culturing Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 279
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 268
- 238000009395 breeding Methods 0.000 description 52
- 230000001488 breeding effect Effects 0.000 description 52
- 239000012535 impurity Substances 0.000 description 19
- 230000007547 defect Effects 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000008710 crystal-8 Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 150000003682 vanadium compounds Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 239000000729 antidote Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012364 cultivation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 150000003681 vanadium Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014217956.4A DE102014217956B4 (de) | 2014-09-09 | 2014-09-09 | Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat |
| JP2015176543A JP6760721B2 (ja) | 2014-09-09 | 2015-09-08 | バナジウムでドープしたＳｉＣ塊状単結晶の製造方法及びバナジウムでドープしたＳｉＣ基板 |
| US14/848,560 US9732438B2 (en) | 2014-09-09 | 2015-09-09 | Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014217956.4A DE102014217956B4 (de) | 2014-09-09 | 2014-09-09 | Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102014217956A1 DE102014217956A1 (de) | 2016-03-10 |
| DE102014217956B4 true DE102014217956B4 (de) | 2018-05-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102014217956.4A Active DE102014217956B4 (de) | 2014-09-09 | 2014-09-09 | Herstellungsverfahren für einen Vanadium-dotierten SiC-Volumeneinkristall und Vanadium-dotiertes SiC-Substrat |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9732438B2 (https=) |
| JP (1) | JP6760721B2 (https=) |
| DE (1) | DE102014217956B4 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180265970A1 (en) * | 2017-03-14 | 2018-09-20 | Eastman Kodak Company | Porous gas-bearing backer |
| EP3382068B1 (en) | 2017-03-29 | 2022-05-18 | SiCrystal GmbH | Silicon carbide substrate and method of growing sic single crystal boules |
| KR102381395B1 (ko) * | 2017-09-18 | 2022-04-01 | 한국전기연구원 | 절연 또는 반절연 ６Ｈ-ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법 |
| JP7258273B2 (ja) | 2018-09-06 | 2023-04-17 | 株式会社レゾナック | ＳｉＣ単結晶の製造方法及び被覆部材 |
| KR102276450B1 (ko) * | 2019-10-29 | 2021-07-12 | 에스케이씨 주식회사 | 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템 |
| TWI723650B (zh) * | 2019-11-26 | 2021-04-01 | 國家中山科學研究院 | 一種均勻碳化矽晶體製備裝置 |
| US11072871B2 (en) | 2019-12-20 | 2021-07-27 | National Chung-Shan Institute Of Science And Technology | Preparation apparatus for silicon carbide crystals comprising a circular cylinder, a doping tablet, and a plate |
| DE102020104226A1 (de) | 2020-02-18 | 2021-08-19 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Verfahren zur Herstellung eines Einkristalls in einem Wachstumstiegel |
| DE102020117661A1 (de) | 2020-07-03 | 2022-01-20 | Friedrich-Alexander-Universität Erlangen-Nürnberg | Kristallzüchtungsanlage zur Herstellung eines Einkristalls |
| US20220251725A1 (en) * | 2021-02-09 | 2022-08-11 | National Chung Shan Institute Of Science And Technology | Method of growing on-axis silicon carbide single crystal by regulating silicon carbide source material in size |
| SE545281C2 (en) * | 2021-03-11 | 2023-06-13 | Kiselkarbid I Stockholm Ab | Simultaneous growth of two silicon carbide layers |
| EP4060098A1 (de) * | 2021-03-19 | 2022-09-21 | SiCrystal GmbH | Herstellungsverfahren für einen sic-volumeneinkristall inhomogener schraubenversetzungsverteilung und sic-substrat |
| WO2023283471A1 (en) * | 2021-07-09 | 2023-01-12 | Pallidus, Inc. | Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same |
| WO2024095640A1 (ja) * | 2022-10-31 | 2024-05-10 | 住友電気工業株式会社 | 炭化珪素基板、エピタキシャル基板、半導体装置の製造方法および炭化珪素基板の製造方法 |
| WO2026080822A1 (en) * | 2024-10-11 | 2026-04-16 | Morgan Advanced Materials And Technology Inc. | Growth chamber for single crystal silicon carbide production |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| WO2002097173A2 (en) | 2001-05-25 | 2002-12-05 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| WO2006041067A1 (en) | 2004-10-13 | 2006-04-20 | Nippon Steel Corporation | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same |
| WO2010111473A1 (en) | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
| EP1874985B1 (en) | 2005-04-19 | 2011-03-02 | II-VI Incorporated | Method of and system for forming sic crystals having spatially uniform doping impurities |
| DE102008063129B4 (de) | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat |
| DE102008063124B4 (de) | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat |
| US20130153836A1 (en) | 2010-09-02 | 2013-06-20 | Bridgestone Corporation | Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0788274B2 (ja) * | 1985-09-18 | 1995-09-27 | 三洋電機株式会社 | ＳｉＣ単結晶の成長方法 |
| JP2868328B2 (ja) * | 1991-03-01 | 1999-03-10 | 新日本製鐵株式会社 | 大口径炭化珪素単結晶インゴットの作製方法および種結晶用炭化珪素単結晶 |
| JPH0710697A (ja) * | 1993-06-28 | 1995-01-13 | Nisshin Steel Co Ltd | 炭化ケイ素単結晶の製造装置 |
| JP2005008472A (ja) * | 2003-06-18 | 2005-01-13 | Nippon Steel Corp | 高品質４ｈ型炭化珪素単結晶、および単結晶ウェハ |
| JP2011102205A (ja) * | 2009-11-10 | 2011-05-26 | Sumitomo Osaka Cement Co Ltd | α型炭化ケイ素粉体の粒径制御方法及び炭化ケイ素単結晶 |
| US8377806B2 (en) * | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
| EP2664695B1 (en) * | 2012-05-16 | 2015-07-15 | SiCrystal AG | Physical vapor transport growth system for simultaneously growing more than one SiC single crystal, and method of growing |
-
2014
- 2014-09-09 DE DE102014217956.4A patent/DE102014217956B4/de active Active
-
2015
- 2015-09-08 JP JP2015176543A patent/JP6760721B2/ja active Active
- 2015-09-09 US US14/848,560 patent/US9732438B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| WO2002097173A2 (en) | 2001-05-25 | 2002-12-05 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| WO2006041067A1 (en) | 2004-10-13 | 2006-04-20 | Nippon Steel Corporation | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same |
| EP1807557B1 (en) | 2004-10-13 | 2010-07-21 | Nippon Steel Corporation | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same |
| EP1874985B1 (en) | 2005-04-19 | 2011-03-02 | II-VI Incorporated | Method of and system for forming sic crystals having spatially uniform doping impurities |
| DE102008063129B4 (de) | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen codotierten SiC-Volumeneinkristall und hochohmiges SiC-Substrat |
| DE102008063124B4 (de) | 2008-12-24 | 2013-05-16 | Sicrystal Ag | Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat |
| WO2010111473A1 (en) | 2009-03-26 | 2010-09-30 | Ii-Vi Incorporated | Sic single crystal sublimation growth method and apparatus |
| US20130153836A1 (en) | 2010-09-02 | 2013-06-20 | Bridgestone Corporation | Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate |
Non-Patent Citations (3)
| Title |
|---|
| "Growth and high temperature performance of semi-insulating silicon carbide", S. A. Reshanov, Diamond and Related Materials 9 (2000), S. 480-482. * |
| „Deep level transient spectroscopic and Hall effect investigation of the position of vanadium acceptor level in 4H and 6H SiC", von J.R. Jenny et al., aus Applied Physics Letters, 68 (14), 01.04.1996, Seiten 1963 bis 1965 |
| „Growth and high temperature performance of semi-insulating silicon carbide" von S. A. Reshanov, aus Diamond and Related Materials 9, 2000, Seiten 480-482 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102014217956A1 (de) | 2016-03-10 |
| US20160068994A1 (en) | 2016-03-10 |
| JP2016056088A (ja) | 2016-04-21 |
| JP6760721B2 (ja) | 2020-09-23 |
| US9732438B2 (en) | 2017-08-15 |
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