DE102014012378A1 - Verfahren zum chemisch-mechanischen polieren eines substrats - Google Patents

Verfahren zum chemisch-mechanischen polieren eines substrats Download PDF

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Publication number
DE102014012378A1
DE102014012378A1 DE102014012378.2A DE102014012378A DE102014012378A1 DE 102014012378 A1 DE102014012378 A1 DE 102014012378A1 DE 102014012378 A DE102014012378 A DE 102014012378A DE 102014012378 A1 DE102014012378 A1 DE 102014012378A1
Authority
DE
Germany
Prior art keywords
layer
polishing
substrate
rigid
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102014012378.2A
Other languages
German (de)
English (en)
Inventor
Michelle K. Jensen
Bainian Qian
Fengji Yeh
Marty DeGroot
Mohammad T. Islam
Matthew Richard VanHanehem
Darrell String
James Murnane
Jeffrey James Hendron
John G. Nowland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102014012378A1 publication Critical patent/DE102014012378A1/de
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE102014012378.2A 2013-08-30 2014-08-20 Verfahren zum chemisch-mechanischen polieren eines substrats Withdrawn DE102014012378A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/014,498 US9102034B2 (en) 2013-08-30 2013-08-30 Method of chemical mechanical polishing a substrate
US14/014,498 2013-08-30

Publications (1)

Publication Number Publication Date
DE102014012378A1 true DE102014012378A1 (de) 2015-03-05

Family

ID=52470535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014012378.2A Withdrawn DE102014012378A1 (de) 2013-08-30 2014-08-20 Verfahren zum chemisch-mechanischen polieren eines substrats

Country Status (7)

Country Link
US (1) US9102034B2 (enExample)
JP (1) JP2015047692A (enExample)
KR (1) KR20150026902A (enExample)
CN (1) CN104416453B (enExample)
DE (1) DE102014012378A1 (enExample)
FR (1) FR3009989B1 (enExample)
TW (1) TWI630066B (enExample)

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US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
USD785339S1 (en) * 2014-10-23 2017-05-02 Griot's Garage, Inc. Hand applicator buffing pad
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9868185B2 (en) 2015-11-03 2018-01-16 Cabot Microelectronics Corporation Polishing pad with foundation layer and window attached thereto
JP6963075B2 (ja) * 2016-08-26 2021-11-05 株式会社東京精密 ウェハの表面処理装置
US10086494B2 (en) * 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
KR101853021B1 (ko) * 2017-01-12 2018-04-30 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
JP6968651B2 (ja) * 2017-10-12 2021-11-17 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
KR102743611B1 (ko) * 2019-07-12 2024-12-17 씨엠씨 머티리얼즈 엘엘씨 폴리아민 및 시클로헥산디메탄올 경화제를 사용한 폴리싱 패드
KR102387060B1 (ko) * 2020-06-16 2022-04-14 임용성 연마제품 펀칭장치
CN112720248B (zh) * 2020-12-16 2022-05-03 浙江工业大学 一种具有剪切膨胀特性的高效抛光盘及其制备方法
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity

Citations (1)

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Publication number Priority date Publication date Assignee Title
US8288448B2 (en) 2004-02-03 2012-10-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polyurethane polishing pad

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Also Published As

Publication number Publication date
US9102034B2 (en) 2015-08-11
FR3009989A1 (fr) 2015-03-06
CN104416453A (zh) 2015-03-18
KR20150026902A (ko) 2015-03-11
TW201524676A (zh) 2015-07-01
CN104416453B (zh) 2017-07-28
JP2015047692A (ja) 2015-03-16
US20150065014A1 (en) 2015-03-05
TWI630066B (zh) 2018-07-21
FR3009989B1 (fr) 2019-05-24

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee