JP2015047692A - 基材を化学機械研磨する方法 - Google Patents

基材を化学機械研磨する方法 Download PDF

Info

Publication number
JP2015047692A
JP2015047692A JP2014174665A JP2014174665A JP2015047692A JP 2015047692 A JP2015047692 A JP 2015047692A JP 2014174665 A JP2014174665 A JP 2014174665A JP 2014174665 A JP2014174665 A JP 2014174665A JP 2015047692 A JP2015047692 A JP 2015047692A
Authority
JP
Japan
Prior art keywords
layer
polishing
substrate
chemical mechanical
hard layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014174665A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015047692A5 (enExample
Inventor
ミッシェル・ケイ・ジェンセン
K Jensen Michelle
バイニャン・チャン
Bainian Qian
フェンジィ・イエ
Fengji Yeh
マーティー・ディグルート
Degroot Marty
モハマッド・ティー・イスラム
T Islam Mohammad
マシュー・リチャード・ヴァンハネヘム
Richard Van Hanehem Matthew
ダレル・ストリング
Darrell String
ジェームズ・ムルナン
Murnane James
ジェフリー・ジェームズ・ヘンドロン
James Hendron Jeffrey
ジョン・ジー・ノーランド
G Nowland John
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2015047692A publication Critical patent/JP2015047692A/ja
Publication of JP2015047692A5 publication Critical patent/JP2015047692A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00Polymeric products of isocyanates or isothiocyanates
    • C08G18/06Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08Processes
    • C08G18/10Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2014174665A 2013-08-30 2014-08-29 基材を化学機械研磨する方法 Pending JP2015047692A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/014,498 US9102034B2 (en) 2013-08-30 2013-08-30 Method of chemical mechanical polishing a substrate
US14/014,498 2013-08-30

Publications (2)

Publication Number Publication Date
JP2015047692A true JP2015047692A (ja) 2015-03-16
JP2015047692A5 JP2015047692A5 (enExample) 2017-09-28

Family

ID=52470535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014174665A Pending JP2015047692A (ja) 2013-08-30 2014-08-29 基材を化学機械研磨する方法

Country Status (7)

Country Link
US (1) US9102034B2 (enExample)
JP (1) JP2015047692A (enExample)
KR (1) KR20150026902A (enExample)
CN (1) CN104416453B (enExample)
DE (1) DE102014012378A1 (enExample)
FR (1) FR3009989B1 (enExample)
TW (1) TWI630066B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018533489A (ja) * 2015-11-03 2018-11-15 キャボット マイクロエレクトロニクス コーポレイション 基礎層及びこれに取付けられた窓を有する研磨パッド
WO2019074098A1 (ja) * 2017-10-12 2019-04-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP2020205443A (ja) * 2016-08-26 2020-12-24 株式会社東京精密 ウェハの表面処理装置
CN112720248A (zh) * 2020-12-16 2021-04-30 浙江工业大学 一种具有剪切膨胀特性的高效抛光盘及其制备方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
USD785339S1 (en) * 2014-10-23 2017-05-02 Griot's Garage, Inc. Hand applicator buffing pad
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10086494B2 (en) * 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
KR101853021B1 (ko) * 2017-01-12 2018-04-30 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
WO2021011260A1 (en) * 2019-07-12 2021-01-21 Cabot Microelectronics Corporation Polishing pad employing polyamine and cyclohexanedimethanol curatives
KR102387060B1 (ko) * 2020-06-16 2022-04-14 임용성 연마제품 펀칭장치
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005539398A (ja) * 2002-09-25 2005-12-22 ピーピージー インダストリーズ オハイオ, インコーポレイテッド 平坦化するための研磨パッド
JP2007520617A (ja) * 2004-02-03 2007-07-26 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ポリウレタン研磨パッド
US7455571B1 (en) * 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20130084702A1 (en) * 2011-09-29 2013-04-04 Jia Xie Acrylate polyurethane chemical mechanical polishing layer

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JPH08216033A (ja) * 1995-02-16 1996-08-27 Fuji Photo Film Co Ltd 研磨テープ
EP0779655A3 (en) 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
JP3611404B2 (ja) * 1996-06-21 2005-01-19 株式会社荏原製作所 ポリッシング装置
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6582281B2 (en) * 2000-03-23 2003-06-24 Micron Technology, Inc. Semiconductor processing methods of removing conductive material
US6561891B2 (en) 2000-05-23 2003-05-13 Rodel Holdings, Inc. Eliminating air pockets under a polished pad
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
TW567114B (en) * 2000-12-01 2003-12-21 Toyo Boseki Polishing pad and manufacture method thereof and buffer layer for polishing pad
TWI222390B (en) * 2001-11-13 2004-10-21 Toyo Boseki Polishing pad and its production method
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US7101275B2 (en) 2003-09-26 2006-09-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Resilient polishing pad for chemical mechanical polishing
US8066552B2 (en) 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US7132033B2 (en) 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
US7569268B2 (en) 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
US20100035529A1 (en) 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
TWM367052U (en) 2009-04-24 2009-10-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
US8157614B2 (en) 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
KR101352235B1 (ko) 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
US8697239B2 (en) 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
JP5634903B2 (ja) 2010-02-25 2014-12-03 東洋ゴム工業株式会社 研磨パッド
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP5945874B2 (ja) * 2011-10-18 2016-07-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005539398A (ja) * 2002-09-25 2005-12-22 ピーピージー インダストリーズ オハイオ, インコーポレイテッド 平坦化するための研磨パッド
JP2007520617A (ja) * 2004-02-03 2007-07-26 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ポリウレタン研磨パッド
US7455571B1 (en) * 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20130084702A1 (en) * 2011-09-29 2013-04-04 Jia Xie Acrylate polyurethane chemical mechanical polishing layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018533489A (ja) * 2015-11-03 2018-11-15 キャボット マイクロエレクトロニクス コーポレイション 基礎層及びこれに取付けられた窓を有する研磨パッド
JP7000320B2 (ja) 2015-11-03 2022-01-19 シーエムシー マテリアルズ,インコーポレイティド 基礎層及びこれに取付けられた窓を有する研磨パッド
JP2020205443A (ja) * 2016-08-26 2020-12-24 株式会社東京精密 ウェハの表面処理装置
WO2019074098A1 (ja) * 2017-10-12 2019-04-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP2019072777A (ja) * 2017-10-12 2019-05-16 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
CN112720248A (zh) * 2020-12-16 2021-04-30 浙江工业大学 一种具有剪切膨胀特性的高效抛光盘及其制备方法

Also Published As

Publication number Publication date
KR20150026902A (ko) 2015-03-11
DE102014012378A1 (de) 2015-03-05
FR3009989A1 (fr) 2015-03-06
TW201524676A (zh) 2015-07-01
US9102034B2 (en) 2015-08-11
FR3009989B1 (fr) 2019-05-24
US20150065014A1 (en) 2015-03-05
TWI630066B (zh) 2018-07-21
CN104416453B (zh) 2017-07-28
CN104416453A (zh) 2015-03-18

Similar Documents

Publication Publication Date Title
JP2015047692A (ja) 基材を化学機械研磨する方法
CN104416452B (zh) 化学机械抛光垫
CN104942702B (zh) 具有抛光层和窗口的化学机械抛光垫
TWI551395B (zh) 製造化學機械硏磨層之方法
KR102195526B1 (ko) 연성이고 컨디셔닝가능한 화학 기계적 창 연마 패드
JP6091276B2 (ja) 窓を有するケミカルメカニカル研磨層の製造方法
JP6367611B2 (ja) 軟質かつコンディショニング可能な研磨層を有する多層化学機械研磨パッドスタック
KR102191947B1 (ko) 연성이고 컨디셔닝가능한 화학 기계적 연마 패드 적층물
JP6538397B2 (ja) 軟質かつコンディショニング可能なウィンドウ付きケミカルメカニカル研磨パッド
JP2014072527A (ja) 溝付き化学機械研磨層の製造方法
JP2022155532A (ja) 研磨パッド及び研磨加工物の製造方法
TWI450811B (zh) A storage tank and a polishing pad manufacturing method using the same

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170815

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170815

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190305