KR20150026902A - 기판의 화학적 기계적 연마 방법 - Google Patents

기판의 화학적 기계적 연마 방법 Download PDF

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Publication number
KR20150026902A
KR20150026902A KR20140112163A KR20140112163A KR20150026902A KR 20150026902 A KR20150026902 A KR 20150026902A KR 20140112163 A KR20140112163 A KR 20140112163A KR 20140112163 A KR20140112163 A KR 20140112163A KR 20150026902 A KR20150026902 A KR 20150026902A
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KR
South Korea
Prior art keywords
layer
polishing
substrate
chemical mechanical
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20140112163A
Other languages
English (en)
Korean (ko)
Inventor
케이 젠센 미쉘
치안 바이니안
예 펭지
드그루트 마티
티 이슬람 모함매드
리처드 반하네헴 매튜
스트링 다렐
머네인 제임스
제임스 헨드론 제프리
지 나우랜드 존
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
다우 글로벌 테크놀로지스 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드, 다우 글로벌 테크놀로지스 엘엘씨 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20150026902A publication Critical patent/KR20150026902A/ko
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR20140112163A 2013-08-30 2014-08-27 기판의 화학적 기계적 연마 방법 Ceased KR20150026902A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/014,498 US9102034B2 (en) 2013-08-30 2013-08-30 Method of chemical mechanical polishing a substrate
US14/014,498 2013-08-30

Publications (1)

Publication Number Publication Date
KR20150026902A true KR20150026902A (ko) 2015-03-11

Family

ID=52470535

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140112163A Ceased KR20150026902A (ko) 2013-08-30 2014-08-27 기판의 화학적 기계적 연마 방법

Country Status (7)

Country Link
US (1) US9102034B2 (enExample)
JP (1) JP2015047692A (enExample)
KR (1) KR20150026902A (enExample)
CN (1) CN104416453B (enExample)
DE (1) DE102014012378A1 (enExample)
FR (1) FR3009989B1 (enExample)
TW (1) TWI630066B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180029912A (ko) * 2016-09-13 2018-03-21 다우 글로벌 테크놀로지스 엘엘씨 고 평탄화 효율 화학 기계적 연마 패드 및 제조 방법
KR20210155548A (ko) * 2020-06-16 2021-12-23 임용성 연마제품 펀칭장치
KR20220034826A (ko) * 2019-07-12 2022-03-18 씨엠씨 머티리얼즈, 인코포레이티드 폴리아민 및 시클로헥산디메탄올 경화제를 사용한 폴리싱 패드

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
USD785339S1 (en) * 2014-10-23 2017-05-02 Griot's Garage, Inc. Hand applicator buffing pad
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9868185B2 (en) 2015-11-03 2018-01-16 Cabot Microelectronics Corporation Polishing pad with foundation layer and window attached thereto
JP6963075B2 (ja) * 2016-08-26 2021-11-05 株式会社東京精密 ウェハの表面処理装置
KR101853021B1 (ko) * 2017-01-12 2018-04-30 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
JP6968651B2 (ja) * 2017-10-12 2021-11-17 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102058877B1 (ko) * 2018-04-20 2019-12-24 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
CN112720248B (zh) * 2020-12-16 2022-05-03 浙江工业大学 一种具有剪切膨胀特性的高效抛光盘及其制备方法
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads
US20230390889A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp pad having polishing layer of low specific gravity

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5245790A (en) * 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JPH08216033A (ja) * 1995-02-16 1996-08-27 Fuji Photo Film Co Ltd 研磨テープ
EP0779655A3 (en) 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
JP3611404B2 (ja) * 1996-06-21 2005-01-19 株式会社荏原製作所 ポリッシング装置
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6582281B2 (en) * 2000-03-23 2003-06-24 Micron Technology, Inc. Semiconductor processing methods of removing conductive material
US6561891B2 (en) 2000-05-23 2003-05-13 Rodel Holdings, Inc. Eliminating air pockets under a polished pad
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
TW567114B (en) * 2000-12-01 2003-12-21 Toyo Boseki Polishing pad and manufacture method thereof and buffer layer for polishing pad
TWI222390B (en) * 2001-11-13 2004-10-21 Toyo Boseki Polishing pad and its production method
KR100697904B1 (ko) * 2002-09-25 2007-03-20 피피지 인더스트리즈 오하이오 인코포레이티드 평탄화를 위한 연마 패드
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US7101275B2 (en) 2003-09-26 2006-09-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Resilient polishing pad for chemical mechanical polishing
US8066552B2 (en) 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
US7132033B2 (en) 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
US7569268B2 (en) 2007-01-29 2009-08-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7455571B1 (en) * 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20090062414A1 (en) 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
US8052507B2 (en) 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
US20100035529A1 (en) 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
TWM367052U (en) 2009-04-24 2009-10-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
US8157614B2 (en) 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
KR101352235B1 (ko) 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
US8697239B2 (en) 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
JP5634903B2 (ja) 2010-02-25 2014-12-03 東洋ゴム工業株式会社 研磨パッド
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
US8512427B2 (en) 2011-09-29 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acrylate polyurethane chemical mechanical polishing layer
JP5945874B2 (ja) * 2011-10-18 2016-07-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180029912A (ko) * 2016-09-13 2018-03-21 다우 글로벌 테크놀로지스 엘엘씨 고 평탄화 효율 화학 기계적 연마 패드 및 제조 방법
KR20220034826A (ko) * 2019-07-12 2022-03-18 씨엠씨 머티리얼즈, 인코포레이티드 폴리아민 및 시클로헥산디메탄올 경화제를 사용한 폴리싱 패드
KR20210155548A (ko) * 2020-06-16 2021-12-23 임용성 연마제품 펀칭장치

Also Published As

Publication number Publication date
DE102014012378A1 (de) 2015-03-05
FR3009989A1 (fr) 2015-03-06
TW201524676A (zh) 2015-07-01
US9102034B2 (en) 2015-08-11
FR3009989B1 (fr) 2019-05-24
US20150065014A1 (en) 2015-03-05
TWI630066B (zh) 2018-07-21
CN104416453B (zh) 2017-07-28
CN104416453A (zh) 2015-03-18
JP2015047692A (ja) 2015-03-16

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