TWI630066B - 化學機械硏磨基材之方法 - Google Patents
化學機械硏磨基材之方法 Download PDFInfo
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- TWI630066B TWI630066B TW103128259A TW103128259A TWI630066B TW I630066 B TWI630066 B TW I630066B TW 103128259 A TW103128259 A TW 103128259A TW 103128259 A TW103128259 A TW 103128259A TW I630066 B TWI630066 B TW I630066B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/014,498 US9102034B2 (en) | 2013-08-30 | 2013-08-30 | Method of chemical mechanical polishing a substrate |
| US14/014,498 | 2013-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201524676A TW201524676A (zh) | 2015-07-01 |
| TWI630066B true TWI630066B (zh) | 2018-07-21 |
Family
ID=52470535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103128259A TWI630066B (zh) | 2013-08-30 | 2014-08-18 | 化學機械硏磨基材之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9102034B2 (enExample) |
| JP (1) | JP2015047692A (enExample) |
| KR (1) | KR20150026902A (enExample) |
| CN (1) | CN104416453B (enExample) |
| DE (1) | DE102014012378A1 (enExample) |
| FR (1) | FR3009989B1 (enExample) |
| TW (1) | TWI630066B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9216489B2 (en) * | 2014-03-28 | 2015-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| USD785339S1 (en) * | 2014-10-23 | 2017-05-02 | Griot's Garage, Inc. | Hand applicator buffing pad |
| US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9868185B2 (en) | 2015-11-03 | 2018-01-16 | Cabot Microelectronics Corporation | Polishing pad with foundation layer and window attached thereto |
| JP6963075B2 (ja) * | 2016-08-26 | 2021-11-05 | 株式会社東京精密 | ウェハの表面処理装置 |
| US10086494B2 (en) * | 2016-09-13 | 2018-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High planarization efficiency chemical mechanical polishing pads and methods of making |
| KR101853021B1 (ko) * | 2017-01-12 | 2018-04-30 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
| US10391606B2 (en) | 2017-06-06 | 2019-08-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pads for improved removal rate and planarization |
| US11179822B2 (en) * | 2017-08-31 | 2021-11-23 | Hubei Dinghui Microelectronics Materials Co., Ltd | Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material |
| JP6968651B2 (ja) * | 2017-10-12 | 2021-11-17 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
| WO2021011260A1 (en) * | 2019-07-12 | 2021-01-21 | Cabot Microelectronics Corporation | Polishing pad employing polyamine and cyclohexanedimethanol curatives |
| KR102387060B1 (ko) * | 2020-06-16 | 2022-04-14 | 임용성 | 연마제품 펀칭장치 |
| CN112720248B (zh) * | 2020-12-16 | 2022-05-03 | 浙江工业大学 | 一种具有剪切膨胀特性的高效抛光盘及其制备方法 |
| US20230390970A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making low specific gravity polishing pads |
| US20230390889A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp pad having polishing layer of low specific gravity |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| US5632789A (en) * | 1995-02-16 | 1997-05-27 | Fuji Photo Film Co., Ltd. | Abrasive tape |
| TW567114B (en) * | 2000-12-01 | 2003-12-21 | Toyo Boseki | Polishing pad and manufacture method thereof and buffer layer for polishing pad |
| TWI222390B (en) * | 2001-11-13 | 2004-10-21 | Toyo Boseki | Polishing pad and its production method |
| TW200530382A (en) * | 2004-02-03 | 2005-09-16 | Rohm & Haas Elect Mat | Polyurethane polishing pad |
| TW200835577A (en) * | 2006-12-21 | 2008-09-01 | Rohm & Haas Elect Mat | Elastomer-modified chemical mechanical polishing pad |
| TW201242711A (en) * | 2011-04-15 | 2012-11-01 | Fujibo Holdings Inc | Polishing pad and manufacturing method thereof |
| TW201321493A (zh) * | 2011-10-18 | 2013-06-01 | Fujibo Holdings Inc | 研磨墊及其製造方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5257478A (en) | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
| US5212910A (en) | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
| US5287663A (en) | 1992-01-21 | 1994-02-22 | National Semiconductor Corporation | Polishing pad and method for polishing semiconductor wafers |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| EP0779655A3 (en) | 1995-12-14 | 1997-07-16 | International Business Machines Corporation | A method of chemically-mechanically polishing an electronic component |
| JP3611404B2 (ja) * | 1996-06-21 | 2005-01-19 | 株式会社荏原製作所 | ポリッシング装置 |
| US5692950A (en) | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
| US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
| US6582281B2 (en) * | 2000-03-23 | 2003-06-24 | Micron Technology, Inc. | Semiconductor processing methods of removing conductive material |
| US6561891B2 (en) | 2000-05-23 | 2003-05-13 | Rodel Holdings, Inc. | Eliminating air pockets under a polished pad |
| US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
| US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
| KR100697904B1 (ko) * | 2002-09-25 | 2007-03-20 | 피피지 인더스트리즈 오하이오 인코포레이티드 | 평탄화를 위한 연마 패드 |
| US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US7101275B2 (en) | 2003-09-26 | 2006-09-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Resilient polishing pad for chemical mechanical polishing |
| US8066552B2 (en) | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
| US7132033B2 (en) | 2004-02-27 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a layered polishing pad |
| US7569268B2 (en) | 2007-01-29 | 2009-08-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
| US7455571B1 (en) * | 2007-06-20 | 2008-11-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window polishing pad |
| US20090062414A1 (en) | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| US8052507B2 (en) | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| US20100035529A1 (en) | 2008-08-05 | 2010-02-11 | Mary Jo Kulp | Chemical mechanical polishing pad |
| TWM367052U (en) | 2009-04-24 | 2009-10-21 | Bestac Advanced Material Co Ltd | Polishing pad and polishing device |
| US8157614B2 (en) | 2009-04-30 | 2012-04-17 | Applied Materials, Inc. | Method of making and apparatus having windowless polishing pad and protected fiber |
| KR101352235B1 (ko) | 2009-05-27 | 2014-01-15 | 로저스코포레이션 | 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법 |
| US8697239B2 (en) | 2009-07-24 | 2014-04-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-functional polishing pad |
| US8551201B2 (en) | 2009-08-07 | 2013-10-08 | Praxair S.T. Technology, Inc. | Polyurethane composition for CMP pads and method of manufacturing same |
| JP5634903B2 (ja) | 2010-02-25 | 2014-12-03 | 東洋ゴム工業株式会社 | 研磨パッド |
| US8512427B2 (en) | 2011-09-29 | 2013-08-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Acrylate polyurethane chemical mechanical polishing layer |
-
2013
- 2013-08-30 US US14/014,498 patent/US9102034B2/en active Active
-
2014
- 2014-08-18 TW TW103128259A patent/TWI630066B/zh active
- 2014-08-20 DE DE102014012378.2A patent/DE102014012378A1/de not_active Withdrawn
- 2014-08-27 KR KR20140112163A patent/KR20150026902A/ko not_active Ceased
- 2014-08-29 CN CN201410438133.7A patent/CN104416453B/zh active Active
- 2014-08-29 JP JP2014174665A patent/JP2015047692A/ja active Pending
- 2014-08-29 FR FR1458106A patent/FR3009989B1/fr not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| US5632789A (en) * | 1995-02-16 | 1997-05-27 | Fuji Photo Film Co., Ltd. | Abrasive tape |
| TW567114B (en) * | 2000-12-01 | 2003-12-21 | Toyo Boseki | Polishing pad and manufacture method thereof and buffer layer for polishing pad |
| TWI222390B (en) * | 2001-11-13 | 2004-10-21 | Toyo Boseki | Polishing pad and its production method |
| TW200530382A (en) * | 2004-02-03 | 2005-09-16 | Rohm & Haas Elect Mat | Polyurethane polishing pad |
| TW200835577A (en) * | 2006-12-21 | 2008-09-01 | Rohm & Haas Elect Mat | Elastomer-modified chemical mechanical polishing pad |
| TW201242711A (en) * | 2011-04-15 | 2012-11-01 | Fujibo Holdings Inc | Polishing pad and manufacturing method thereof |
| TW201321493A (zh) * | 2011-10-18 | 2013-06-01 | Fujibo Holdings Inc | 研磨墊及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150026902A (ko) | 2015-03-11 |
| DE102014012378A1 (de) | 2015-03-05 |
| FR3009989A1 (fr) | 2015-03-06 |
| TW201524676A (zh) | 2015-07-01 |
| US9102034B2 (en) | 2015-08-11 |
| FR3009989B1 (fr) | 2019-05-24 |
| US20150065014A1 (en) | 2015-03-05 |
| CN104416453B (zh) | 2017-07-28 |
| CN104416453A (zh) | 2015-03-18 |
| JP2015047692A (ja) | 2015-03-16 |
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