CN104416453B - 对基材进行化学机械抛光的方法 - Google Patents
对基材进行化学机械抛光的方法 Download PDFInfo
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- CN104416453B CN104416453B CN201410438133.7A CN201410438133A CN104416453B CN 104416453 B CN104416453 B CN 104416453B CN 201410438133 A CN201410438133 A CN 201410438133A CN 104416453 B CN104416453 B CN 104416453B
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/014,498 US9102034B2 (en) | 2013-08-30 | 2013-08-30 | Method of chemical mechanical polishing a substrate |
| US14/014,498 | 2013-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104416453A CN104416453A (zh) | 2015-03-18 |
| CN104416453B true CN104416453B (zh) | 2017-07-28 |
Family
ID=52470535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410438133.7A Active CN104416453B (zh) | 2013-08-30 | 2014-08-29 | 对基材进行化学机械抛光的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9102034B2 (enExample) |
| JP (1) | JP2015047692A (enExample) |
| KR (1) | KR20150026902A (enExample) |
| CN (1) | CN104416453B (enExample) |
| DE (1) | DE102014012378A1 (enExample) |
| FR (1) | FR3009989B1 (enExample) |
| TW (1) | TWI630066B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9216489B2 (en) * | 2014-03-28 | 2015-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| USD785339S1 (en) * | 2014-10-23 | 2017-05-02 | Griot's Garage, Inc. | Hand applicator buffing pad |
| US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9868185B2 (en) | 2015-11-03 | 2018-01-16 | Cabot Microelectronics Corporation | Polishing pad with foundation layer and window attached thereto |
| JP6963075B2 (ja) * | 2016-08-26 | 2021-11-05 | 株式会社東京精密 | ウェハの表面処理装置 |
| US10086494B2 (en) * | 2016-09-13 | 2018-10-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High planarization efficiency chemical mechanical polishing pads and methods of making |
| KR101853021B1 (ko) * | 2017-01-12 | 2018-04-30 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
| US10391606B2 (en) | 2017-06-06 | 2019-08-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pads for improved removal rate and planarization |
| US11179822B2 (en) * | 2017-08-31 | 2021-11-23 | Hubei Dinghui Microelectronics Materials Co., Ltd | Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material |
| JP6968651B2 (ja) * | 2017-10-12 | 2021-11-17 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
| WO2021011260A1 (en) * | 2019-07-12 | 2021-01-21 | Cabot Microelectronics Corporation | Polishing pad employing polyamine and cyclohexanedimethanol curatives |
| KR102387060B1 (ko) * | 2020-06-16 | 2022-04-14 | 임용성 | 연마제품 펀칭장치 |
| CN112720248B (zh) * | 2020-12-16 | 2022-05-03 | 浙江工业大学 | 一种具有剪切膨胀特性的高效抛光盘及其制备方法 |
| US20230390970A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making low specific gravity polishing pads |
| US20230390889A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp pad having polishing layer of low specific gravity |
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| US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| US5632789A (en) * | 1995-02-16 | 1997-05-27 | Fuji Photo Film Co., Ltd. | Abrasive tape |
| EP0813932A1 (en) * | 1996-06-21 | 1997-12-29 | Ebara Corporation | Polishing apparatus having a cloth cartridge |
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| US7455571B1 (en) * | 2007-06-20 | 2008-11-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window polishing pad |
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| KR100697904B1 (ko) * | 2002-09-25 | 2007-03-20 | 피피지 인더스트리즈 오하이오 인코포레이티드 | 평탄화를 위한 연마 패드 |
| US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| US7101275B2 (en) | 2003-09-26 | 2006-09-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Resilient polishing pad for chemical mechanical polishing |
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| US20090062414A1 (en) | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
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-
2013
- 2013-08-30 US US14/014,498 patent/US9102034B2/en active Active
-
2014
- 2014-08-18 TW TW103128259A patent/TWI630066B/zh active
- 2014-08-20 DE DE102014012378.2A patent/DE102014012378A1/de not_active Withdrawn
- 2014-08-27 KR KR20140112163A patent/KR20150026902A/ko not_active Ceased
- 2014-08-29 CN CN201410438133.7A patent/CN104416453B/zh active Active
- 2014-08-29 JP JP2014174665A patent/JP2015047692A/ja active Pending
- 2014-08-29 FR FR1458106A patent/FR3009989B1/fr not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245790A (en) * | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
| US5632789A (en) * | 1995-02-16 | 1997-05-27 | Fuji Photo Film Co., Ltd. | Abrasive tape |
| EP0813932A1 (en) * | 1996-06-21 | 1997-12-29 | Ebara Corporation | Polishing apparatus having a cloth cartridge |
| WO2001071796A2 (en) * | 2000-03-23 | 2001-09-27 | Micron Technology, Inc. | Method for electrochemical polishing of a conductive material |
| CN1914241A (zh) * | 2004-02-03 | 2007-02-14 | 罗门哈斯电子材料Cmp控股股份有限公司 | 聚氨酯抛光垫 |
| US7455571B1 (en) * | 2007-06-20 | 2008-11-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window polishing pad |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150026902A (ko) | 2015-03-11 |
| DE102014012378A1 (de) | 2015-03-05 |
| FR3009989A1 (fr) | 2015-03-06 |
| TW201524676A (zh) | 2015-07-01 |
| US9102034B2 (en) | 2015-08-11 |
| FR3009989B1 (fr) | 2019-05-24 |
| US20150065014A1 (en) | 2015-03-05 |
| TWI630066B (zh) | 2018-07-21 |
| CN104416453A (zh) | 2015-03-18 |
| JP2015047692A (ja) | 2015-03-16 |
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