DE102011002233A8 - GaN-basierte Leistungsvorrichtungen mit integrierten Schutzvorrichtungen: Strukturen und Verfahren - Google Patents

GaN-basierte Leistungsvorrichtungen mit integrierten Schutzvorrichtungen: Strukturen und Verfahren Download PDF

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Publication number
DE102011002233A8
DE102011002233A8 DE102011002233A DE102011002233A DE102011002233A8 DE 102011002233 A8 DE102011002233 A8 DE 102011002233A8 DE 102011002233 A DE102011002233 A DE 102011002233A DE 102011002233 A DE102011002233 A DE 102011002233A DE 102011002233 A8 DE102011002233 A8 DE 102011002233A8
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devices
gan
structures
processes
based power
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DE102011002233A1 (de
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Francois Hebert
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Intersil Corp
Intersil Americas LLC
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Intersil Americas LLC
Intersil Inc
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/2003—Nitride compounds
DE102011002233A 2010-04-23 2011-04-21 GaN based power devices with integrated protection devices: structures and methods Withdrawn DE102011002233A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US32733410P 2010-04-23 2010-04-23
US32729110P 2010-04-23 2010-04-23
US61/327,291 2010-04-23
US61/327,334 2010-04-23
US12/950,202 US8637360B2 (en) 2010-04-23 2010-11-19 Power devices with integrated protection devices: structures and methods
US12/950,202 2010-11-19

Publications (2)

Publication Number Publication Date
DE102011002233A1 DE102011002233A1 (de) 2011-11-17
DE102011002233A8 true DE102011002233A8 (de) 2012-01-26

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DE102011002234A Withdrawn DE102011002234A1 (de) 2010-04-23 2011-04-21 GaN-basierte Leistungsvorrichtung mit integrierten Schutzvorrichtungen: Strukturen und Verfahren
DE102011002233A Withdrawn DE102011002233A1 (de) 2010-04-23 2011-04-21 GaN based power devices with integrated protection devices: structures and methods

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DE102011002234A Withdrawn DE102011002234A1 (de) 2010-04-23 2011-04-21 GaN-basierte Leistungsvorrichtung mit integrierten Schutzvorrichtungen: Strukturen und Verfahren

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US (2) US8492773B2 (de)
KR (2) KR20110118580A (de)
CN (2) CN102237360A (de)
DE (2) DE102011002234A1 (de)
TW (2) TW201205681A (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455209B (zh) * 2009-10-12 2014-10-01 Pfc Device Co 溝渠式金氧半ｐ－ｎ接面蕭基二極體結構及其製作方法
JP5891650B2 (ja) * 2011-08-18 2016-03-23 富士通株式会社 化合物半導体装置及びその製造方法
US20130140671A1 (en) * 2011-12-06 2013-06-06 Win Semiconductors Corp. Compound semiconductor integrated circuit with three-dimensionally formed components
US9165839B2 (en) 2012-03-13 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma protection diode for a HEMT device
JP5607096B2 (ja) * 2012-03-23 2014-10-15 株式会社東芝 窒化物半導体装置
CN103367393B (zh) * 2012-03-28 2016-04-13 上海华虹宏力半导体制造有限公司 瞬态电压抑制器件及制造工艺方法
US9276097B2 (en) * 2012-03-30 2016-03-01 Infineon Technologies Austria Ag Gate overvoltage protection for compound semiconductor transistors
KR101946008B1 (ko) * 2012-07-17 2019-02-08 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법
DE102012217073A1 (de) * 2012-09-21 2014-03-27 Robert Bosch Gmbh Vertikales mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren
US9048106B2 (en) * 2012-12-13 2015-06-02 Diodes Incorporated Semiconductor diode assembly
US9111750B2 (en) 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
TWI566328B (zh) 2013-07-29 2017-01-11 高效電源轉換公司 具有用於產生附加構件之多晶矽層的氮化鎵電晶體
JP6143598B2 (ja) * 2013-08-01 2017-06-07 株式会社東芝 半導体装置
US8969882B1 (en) * 2013-08-26 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an ohmic contact by screen layer and method of making the same
JP2015056556A (ja) * 2013-09-12 2015-03-23 株式会社東芝 半導体装置
US9330961B2 (en) * 2013-09-23 2016-05-03 Freescale Semiconductor, Inc. Stacked protection devices and related fabrication methods
CN103606566A (zh) * 2013-11-14 2014-02-26 中航（重庆）微电子有限公司 一种沟槽式肖特基二极管结构及其制造方法
CN103618003B (zh) * 2013-11-18 2017-04-12 石以瑄 具有改良栅极的高电子迁移率晶体管
EP2922093B1 (de) * 2014-03-19 2017-05-10 Nxp B.V. HEMT-Temperatursensor
US9461034B2 (en) * 2014-06-23 2016-10-04 Infineon Technologies Americas Corp. Composite group III-V and group IV transistor having a switched substrate
US9356134B2 (en) * 2014-06-24 2016-05-31 Alpha And Omega Semiconductor Incorporated Charged balanced devices with shielded gate trench
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
US9741711B2 (en) 2014-10-28 2017-08-22 Semiconductor Components Industries, Llc Cascode semiconductor device structure and method therefor
US9755639B2 (en) 2015-03-02 2017-09-05 Infineon Technologies Austria Ag Device and method for an electronic circuit having a driver and rectifier
US9773898B2 (en) * 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
EP3174102B1 (de) * 2015-11-27 2022-09-28 Nexperia B.V. Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements
US10840334B2 (en) 2016-06-24 2020-11-17 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US10192980B2 (en) * 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10892356B2 (en) 2016-06-24 2021-01-12 Cree, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
CN109216471A (zh) * 2017-02-27 2019-01-15 杭州赛晶电子有限公司 异型杂质扩散对接的p+n+型低压硅扩散片及其硅二极管
US10157904B2 (en) * 2017-03-31 2018-12-18 Alpha And Omega Semiconductor (Cayman) Ltd. High surge bi-directional transient voltage suppressor
JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
CN109755308B (zh) * 2017-11-08 2022-04-29 世界先进积体电路股份有限公司 半导体结构和高电子迁移率晶体管的制造方法
US11121229B2 (en) 2017-12-28 2021-09-14 Vanguard International Semiconductor Corporation Methods of fabricating semiconductor structures and high electron mobility transistors
GB2570318B (en) 2018-01-19 2022-03-09 X Fab Semiconductor Foundries Gmbh Ohmic contacts in semiconductor devices
FR3086797B1 (fr) * 2018-09-27 2021-10-22 St Microelectronics Tours Sas Circuit electronique comprenant des diodes
US10840798B1 (en) 2018-09-28 2020-11-17 Dialog Semiconductor (Uk) Limited Bidirectional signaling method for high-voltage floating circuits
US11069770B2 (en) * 2018-10-01 2021-07-20 Ipower Semiconductor Carrier injection control fast recovery diode structures
CN112331718B (zh) * 2019-08-05 2022-02-22 苏州捷芯威半导体有限公司 一种半导体器件及其制备方法
US11393806B2 (en) 2019-09-23 2022-07-19 Analog Devices, Inc. Gallium nitride and silicon carbide hybrid power device
CN219040486U (zh) * 2020-01-16 2023-05-16 华为技术有限公司 一种氮化物半导体晶体管及电子设备
CN111293174A (zh) * 2020-02-25 2020-06-16 英诺赛科（珠海）科技有限公司 半导体器件及其制造方法
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
CN115472605B (zh) * 2022-09-10 2023-11-28 江苏晟驰微电子有限公司 一种大功率低钳位保护器件的制作方法及保护器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259129B1 (en) 1999-04-20 2001-07-10 International Business Machines Corporation Strap with intrinsically conductive barrier
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
US6862189B2 (en) 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
US20030030056A1 (en) * 2001-08-06 2003-02-13 Motorola, Inc. Voltage and current reference circuits using different substrate-type components
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20070032029A1 (en) * 2005-04-19 2007-02-08 Rensselaer Polytechnic Institute Lateral trench power MOSFET with reduced gate-to-drain capacitance
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems

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US20110260216A1 (en) 2011-10-27
TW201205681A (en) 2012-02-01
US20110260174A1 (en) 2011-10-27
TW201203542A (en) 2012-01-16
DE102011002234A1 (de) 2011-10-27
KR20110118580A (ko) 2011-10-31
DE102011002233A1 (de) 2011-11-17
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