DE102010045196A1 - Verbindungshalbleitersubstrat - Google Patents

Verbindungshalbleitersubstrat Download PDF

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Publication number
DE102010045196A1
DE102010045196A1 DE102010045196A DE102010045196A DE102010045196A1 DE 102010045196 A1 DE102010045196 A1 DE 102010045196A1 DE 102010045196 A DE102010045196 A DE 102010045196A DE 102010045196 A DE102010045196 A DE 102010045196A DE 102010045196 A1 DE102010045196 A1 DE 102010045196A1
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DE
Germany
Prior art keywords
single crystal
layer
atoms
compound semiconductor
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102010045196A
Other languages
German (de)
English (en)
Inventor
Jun Hadano Komiyama
Kenichi Hadano Eriguchi
Hiroshi Hadano Oishi
Yoshihisa Hadano Abe
Akira Hadano Yoshida
Shunichi Hadano Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Covalent Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Covalent Materials Corp filed Critical Covalent Materials Corp
Publication of DE102010045196A1 publication Critical patent/DE102010045196A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice

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  • Junction Field-Effect Transistors (AREA)
DE102010045196A 2009-09-14 2010-09-13 Verbindungshalbleitersubstrat Ceased DE102010045196A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009211189 2009-09-14
JP2009-211189 2009-09-14
JP2010-153634 2010-07-06
JP2010153634A JP5188545B2 (ja) 2009-09-14 2010-07-06 化合物半導体基板

Publications (1)

Publication Number Publication Date
DE102010045196A1 true DE102010045196A1 (de) 2011-03-24

Family

ID=43603673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010045196A Ceased DE102010045196A1 (de) 2009-09-14 2010-09-13 Verbindungshalbleitersubstrat

Country Status (3)

Country Link
US (1) US8212288B2 (https=)
JP (1) JP5188545B2 (https=)
DE (1) DE102010045196A1 (https=)

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* Cited by examiner, † Cited by third party
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JP5707767B2 (ja) * 2010-07-29 2015-04-30 住友電気工業株式会社 半導体装置
JP5649112B2 (ja) 2010-07-30 2015-01-07 パナソニック株式会社 電界効果トランジスタ
CN103155124A (zh) * 2010-11-19 2013-06-12 松下电器产业株式会社 氮化物半导体装置
JP5624940B2 (ja) * 2011-05-17 2014-11-12 古河電気工業株式会社 半導体素子及びその製造方法
JP2012243886A (ja) * 2011-05-18 2012-12-10 Sharp Corp 半導体装置
US8796738B2 (en) * 2011-09-21 2014-08-05 International Rectifier Corporation Group III-V device structure having a selectively reduced impurity concentration
JP5912383B2 (ja) * 2011-10-03 2016-04-27 クアーズテック株式会社 窒化物半導体基板
US9165766B2 (en) * 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP6151487B2 (ja) 2012-07-10 2017-06-21 富士通株式会社 化合物半導体装置及びその製造方法
JP6002508B2 (ja) 2012-09-03 2016-10-05 住友化学株式会社 窒化物半導体ウェハ
JP2014072429A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置
JPWO2014108946A1 (ja) 2013-01-10 2017-01-19 パナソニックＩｐマネジメント株式会社 電界効果トランジスタ
EP2767620B1 (en) 2013-02-15 2024-10-09 AZUR SPACE Solar Power GmbH P-doping of group-III-nitride buffer layer structure on a heterosubstrate
US9245992B2 (en) * 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
JP2014220407A (ja) * 2013-05-09 2014-11-20 ローム株式会社 窒化物半導体素子
JP2015053328A (ja) * 2013-09-05 2015-03-19 富士通株式会社 半導体装置
JP2015060987A (ja) * 2013-09-19 2015-03-30 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2015070064A (ja) 2013-09-27 2015-04-13 富士通株式会社 半導体装置及び半導体装置の製造方法
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
JP6249868B2 (ja) * 2014-04-18 2017-12-20 サンケン電気株式会社 半導体基板及び半導体素子
JP2016004948A (ja) * 2014-06-18 2016-01-12 株式会社東芝 半導体装置
US9876143B2 (en) 2014-10-01 2018-01-23 Rayvio Corporation Ultraviolet light emitting device doped with boron
US9608103B2 (en) * 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
TWI657578B (zh) * 2014-11-07 2019-04-21 日商住友化學股份有限公司 半導體基板及半導體基板的檢查方法
FR3028670B1 (fr) * 2014-11-18 2017-12-22 Commissariat Energie Atomique Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales
JP6473017B2 (ja) 2015-03-09 2019-02-20 エア・ウォーター株式会社 化合物半導体基板
TW201637078A (zh) * 2015-04-01 2016-10-16 環球晶圓股份有限公司 半導體元件
JP2017163050A (ja) * 2016-03-10 2017-09-14 株式会社東芝 半導体装置
JP6233476B2 (ja) * 2016-09-07 2017-11-22 富士通株式会社 化合物半導体装置
EP3364463A3 (en) 2017-02-20 2018-11-14 CoorsTek KK Nitride semiconductor substrate and method for manufactuing the same
EP3731260A4 (en) * 2017-12-19 2021-12-22 Sumco Corporation METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
JP7179706B2 (ja) * 2018-12-12 2022-11-29 クアーズテック株式会社 窒化物半導体基板
US10825895B2 (en) 2018-12-12 2020-11-03 Coorstek Kk Nitride semiconductor substrate
JP7158272B2 (ja) * 2018-12-25 2022-10-21 エア・ウォーター株式会社 化合物半導体基板
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
US20240112909A1 (en) * 2021-02-22 2024-04-04 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor epitaxial substrate, method for producing same, and nitride semiconductor device
JP7388422B2 (ja) * 2021-12-23 2023-11-29 信越半導体株式会社 窒化物半導体基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067077A (ja) 2005-08-30 2007-03-15 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
JP2008171843A (ja) 2007-01-05 2008-07-24 Furukawa Electric Co Ltd:The 半導体電子デバイス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10290051A (ja) * 1997-04-16 1998-10-27 Furukawa Electric Co Ltd:The 半導体装置とその製造方法
JP3648386B2 (ja) * 1998-07-08 2005-05-18 株式会社東芝 半導体素子およびウェーハならびにそれらの製造方法
JP2002100837A (ja) * 2000-09-25 2002-04-05 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2003059948A (ja) * 2001-08-20 2003-02-28 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
JP4792814B2 (ja) * 2005-05-26 2011-10-12 住友電気工業株式会社 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびｉｉｉ族窒化物系トランジスタを作製する方法
JP5064824B2 (ja) * 2006-02-20 2012-10-31 古河電気工業株式会社 半導体素子
JP2010239034A (ja) * 2009-03-31 2010-10-21 Furukawa Electric Co Ltd:The 半導体装置の製造方法および半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067077A (ja) 2005-08-30 2007-03-15 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
JP2008171843A (ja) 2007-01-05 2008-07-24 Furukawa Electric Co Ltd:The 半導体電子デバイス

Also Published As

Publication number Publication date
US8212288B2 (en) 2012-07-03
JP5188545B2 (ja) 2013-04-24
US20110062556A1 (en) 2011-03-17
JP2011082494A (ja) 2011-04-21

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Owner name: COORSTEK KK, JP

Free format text: FORMER OWNER: COVALENT MATERIALS CORP., TOKYO, JP

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Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE

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