DE102009006144A1 - Magnetischer Sensor und Drehwinkel-Erfassungsvorrichtung - Google Patents

Magnetischer Sensor und Drehwinkel-Erfassungsvorrichtung Download PDF

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Publication number
DE102009006144A1
DE102009006144A1 DE102009006144A DE102009006144A DE102009006144A1 DE 102009006144 A1 DE102009006144 A1 DE 102009006144A1 DE 102009006144 A DE102009006144 A DE 102009006144A DE 102009006144 A DE102009006144 A DE 102009006144A DE 102009006144 A1 DE102009006144 A1 DE 102009006144A1
Authority
DE
Germany
Prior art keywords
angle
elements
layer
magnetoresistive
magnetoresistive elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102009006144A
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German (de)
English (en)
Inventor
Yasuyuki Kumagaya-shi Okada
Chiharu Kumagaya-shi Mitsumata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of DE102009006144A1 publication Critical patent/DE102009006144A1/de
Ceased legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G01D5/145Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
DE102009006144A 2008-01-29 2009-01-26 Magnetischer Sensor und Drehwinkel-Erfassungsvorrichtung Ceased DE102009006144A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008-018031 2008-01-29
JP2008018031 2008-01-29
JP2008164644 2008-06-24
JP2008-164644 2008-06-24
JP2008238938A JP5170679B2 (ja) 2008-01-29 2008-09-18 磁気センサおよび回転角度検出装置
JP2008-238938 2008-09-18

Publications (1)

Publication Number Publication Date
DE102009006144A1 true DE102009006144A1 (de) 2009-10-08

Family

ID=40898559

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009006144A Ceased DE102009006144A1 (de) 2008-01-29 2009-01-26 Magnetischer Sensor und Drehwinkel-Erfassungsvorrichtung

Country Status (3)

Country Link
US (1) US8054067B2 (https=)
JP (1) JP5170679B2 (https=)
DE (1) DE102009006144A1 (https=)

Cited By (4)

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DE102013102165A1 (de) 2012-07-18 2014-02-06 Tdk Corporation Magnetsensorsystem
DE102017106322B4 (de) * 2016-03-23 2020-01-30 Analog Devices Global Magnetfelddetektor
US10739165B2 (en) 2017-07-05 2020-08-11 Analog Devices Global Magnetic field sensor
US11656301B2 (en) 2019-11-19 2023-05-23 Tdk Corporation Magnetic sensor including magnetoresistive effect element and sealed chip

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US8779764B2 (en) 2009-07-13 2014-07-15 Hitachi Metals, Ltd. Method for producing magnetoresistive effect element, magnetic sensor, rotation-angle detection device
JP5476518B2 (ja) * 2010-03-12 2014-04-23 アルプス電気株式会社 磁気センサの製造方法
US11506732B2 (en) 2010-10-20 2022-11-22 Infineon Technologies Ag XMR sensors with serial segment strip configurations
JP5131339B2 (ja) * 2010-11-17 2013-01-30 Tdk株式会社 回転磁界センサ
CN102540112B (zh) * 2011-04-06 2014-04-16 江苏多维科技有限公司 单一芯片推挽桥式磁场传感器
CN102226836A (zh) 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片桥式磁场传感器及其制备方法
CN202013413U (zh) 2011-04-06 2011-10-19 江苏多维科技有限公司 单一芯片桥式磁场传感器
TWI510768B (zh) * 2011-06-21 2015-12-01 Ind Tech Res Inst 力感測裝置及其力感測系統
JP5802565B2 (ja) * 2012-01-18 2015-10-28 アルプス電気株式会社 磁気センサ
DE102012209232A1 (de) * 2012-05-31 2013-12-05 Robert Bosch Gmbh Magnetfeldsensor
JP6080555B2 (ja) * 2013-01-11 2017-02-15 アルプス電気株式会社 回転検出装置及びその製造方法
US9240546B2 (en) * 2013-03-26 2016-01-19 Infineon Technologies Ag Magnetoresistive devices and methods for manufacturing magnetoresistive devices
US9377327B2 (en) * 2013-06-28 2016-06-28 Analog Devices Global Magnetic field direction sensor
JP6127271B2 (ja) * 2013-09-19 2017-05-17 パナソニックIpマネジメント株式会社 巨大磁気抵抗素子
CN103645448A (zh) * 2013-12-20 2014-03-19 叶友忠 改型惠斯通半桥电路及传感器
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
US9625281B2 (en) * 2014-12-23 2017-04-18 Infineon Technologies Ag Fail-safe operation of an angle sensor with mixed bridges having separate power supplies
JP2016166748A (ja) * 2015-03-09 2016-09-15 Tdk株式会社 磁気センサ
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10557726B2 (en) * 2018-01-31 2020-02-11 Allegro Microsystems, Llc Systems and methods for reducing angle error for magnetic field angle sensors
US11199424B2 (en) 2018-01-31 2021-12-14 Allegro Microsystems, Llc Reducing angle error in a magnetic field angle sensor
JP6597820B2 (ja) * 2018-03-12 2019-10-30 Tdk株式会社 磁気センサおよび位置検出装置
JP6900936B2 (ja) * 2018-06-08 2021-07-14 Tdk株式会社 磁気検出装置
EP3667347B1 (en) * 2018-12-13 2021-09-08 Crocus Technology S.A. Magnetoresistive-based sensing circuit for two-dimensional sensing of high magnetic fields
WO2021041093A1 (en) * 2019-08-28 2021-03-04 Allegro Microsystems, Llc Reducing angle error in a magnetic field angle sensor
US11175359B2 (en) 2019-08-28 2021-11-16 Allegro Microsystems, Llc Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (TMR) elements
JP2021047083A (ja) * 2019-09-18 2021-03-25 株式会社東海理化電機製作所 磁気センサ
US11467233B2 (en) 2020-03-18 2022-10-11 Allegro Microsystems, Llc Linear bridges having nonlinear elements
US11408948B2 (en) 2020-03-18 2022-08-09 Allegro Microsystems, Llc Linear bridge having nonlinear elements for operation in high magnetic field intensities
EP4012431B1 (en) * 2020-12-11 2025-07-02 Allegro MicroSystems, LLC Magnetoresistive element for sensing a magnetic field in a z-axis
US11630168B2 (en) 2021-02-03 2023-04-18 Allegro Microsystems, Llc Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
JP7837343B2 (ja) * 2021-03-19 2026-03-30 アレグロ・マイクロシステムズ・エルエルシー 高感度かつ低ゼロ磁場オフセットシフトを持つ磁気抵抗素子及び磁気センサ装置
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field
CN117250571B (zh) * 2023-09-18 2024-08-30 苏州纳芯微电子股份有限公司 高精度磁场感测装置及运动传感器

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JPH0333934A (ja) 1989-06-29 1991-02-14 Nec Corp レジスタ退避復帰方式
JP2001159542A (ja) 1999-12-03 2001-06-12 Hitachi Metals Ltd 回転角度センサー及び回転角度センサーユニット
JP2003502876A (ja) 1999-06-18 2003-01-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不可逆特性を持つ磁気システムおよびこの種システムを作成し修理し操作する方法
JP2004296000A (ja) 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
JP3587678B2 (ja) 1998-03-20 2004-11-10 Tdk株式会社 磁界センサ
JP2005024287A (ja) 2003-06-30 2005-01-27 Alps Electric Co Ltd 角度検出センサ

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JPH1097709A (ja) * 1996-09-20 1998-04-14 Fujitsu Ltd スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録再生装置
JP3623367B2 (ja) * 1998-07-17 2005-02-23 アルプス電気株式会社 巨大磁気抵抗効果素子を備えたポテンショメータ
US6633462B2 (en) * 2000-07-13 2003-10-14 Koninklijke Philips Electronics N.V. Magnetoresistive angle sensor having several sensing elements
TWI361503B (en) * 2005-03-17 2012-04-01 Yamaha Corp Three-axis magnetic sensor and manufacturing method therefor
JP4458103B2 (ja) * 2007-02-27 2010-04-28 Tdk株式会社 磁気センサ、磁気方位センサ、磁界検出方法および磁気方位検出方法
US8203332B2 (en) * 2008-06-24 2012-06-19 Magic Technologies, Inc. Gear tooth sensor (GTS) with magnetoresistive bridge

Patent Citations (6)

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JPH0333934A (ja) 1989-06-29 1991-02-14 Nec Corp レジスタ退避復帰方式
JP3587678B2 (ja) 1998-03-20 2004-11-10 Tdk株式会社 磁界センサ
JP2003502876A (ja) 1999-06-18 2003-01-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不可逆特性を持つ磁気システムおよびこの種システムを作成し修理し操作する方法
JP2001159542A (ja) 1999-12-03 2001-06-12 Hitachi Metals Ltd 回転角度センサー及び回転角度センサーユニット
JP2004296000A (ja) 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
JP2005024287A (ja) 2003-06-30 2005-01-27 Alps Electric Co Ltd 角度検出センサ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013102165A1 (de) 2012-07-18 2014-02-06 Tdk Corporation Magnetsensorsystem
DE102013102165B4 (de) * 2012-07-18 2014-11-20 Tdk Corporation Magnetsensorsystem
DE102017106322B4 (de) * 2016-03-23 2020-01-30 Analog Devices Global Magnetfelddetektor
US11187763B2 (en) 2016-03-23 2021-11-30 Analog Devices International Unlimited Company Offset compensation for magnetic field detector
US11294003B2 (en) 2016-03-23 2022-04-05 Analog Devices International Unlimited Company Magnetic field detector
US12025683B2 (en) 2016-03-23 2024-07-02 Analog Devices International Unlimited Company Length detector with magnetoresitive elements
US10739165B2 (en) 2017-07-05 2020-08-11 Analog Devices Global Magnetic field sensor
US11656301B2 (en) 2019-11-19 2023-05-23 Tdk Corporation Magnetic sensor including magnetoresistive effect element and sealed chip
US11965941B2 (en) 2019-11-19 2024-04-23 Tdk Corporation Magnetic sensor
US12298363B2 (en) 2019-11-19 2025-05-13 Tdk Corporation Magnetic sensor having magnetoresistive effect element with inclined magnetization direction of pinned layer

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JP2010032484A (ja) 2010-02-12
US20090189601A1 (en) 2009-07-30
JP5170679B2 (ja) 2013-03-27
US8054067B2 (en) 2011-11-08

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