DE102008058436B4 - Kantenemittierender Halbleiterlaserchip - Google Patents

Kantenemittierender Halbleiterlaserchip Download PDF

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Publication number
DE102008058436B4
DE102008058436B4 DE102008058436.3A DE102008058436A DE102008058436B4 DE 102008058436 B4 DE102008058436 B4 DE 102008058436B4 DE 102008058436 A DE102008058436 A DE 102008058436A DE 102008058436 B4 DE102008058436 B4 DE 102008058436B4
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Prior art keywords
contact strip
semiconductor laser
laser chip
edge
structures
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DE102008058436.3A
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German (de)
English (en)
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DE102008058436A1 (de
Inventor
Christian Lauer
Dr. König Harald
Wolfgang Reill
Dr. Strauß Uwe
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to DE102008058436.3A priority Critical patent/DE102008058436B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PL09765010T priority patent/PL2347482T3/pl
Priority to EP09765010.5A priority patent/EP2347482B1/de
Priority to CN2009801468590A priority patent/CN102224647B/zh
Priority to JP2011536734A priority patent/JP5528465B2/ja
Priority to KR1020117014107A priority patent/KR101637054B1/ko
Priority to PCT/DE2009/001482 priority patent/WO2010057455A2/de
Priority to US13/127,887 priority patent/US8831061B2/en
Publication of DE102008058436A1 publication Critical patent/DE102008058436A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
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    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Acoustics & Sound (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE102008058436.3A 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip Active DE102008058436B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008058436.3A DE102008058436B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip
EP09765010.5A EP2347482B1 (de) 2008-11-21 2009-10-21 Kantenemittierender halbleiterlaserchip
CN2009801468590A CN102224647B (zh) 2008-11-21 2009-10-21 边发射半导体激光器芯片
JP2011536734A JP5528465B2 (ja) 2008-11-21 2009-10-21 エッジ発光型半導体レーザチップ
PL09765010T PL2347482T3 (pl) 2008-11-21 2009-10-21 Półprzewodnikowy chip laserowy z emisją krawędziową
KR1020117014107A KR101637054B1 (ko) 2008-11-21 2009-10-21 에지방출형 반도체 레이저칩
PCT/DE2009/001482 WO2010057455A2 (de) 2008-11-21 2009-10-21 Kantenemittierender halbleiterlaserchip
US13/127,887 US8831061B2 (en) 2008-11-21 2009-10-21 Edge emitting semiconductor laser chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008058436.3A DE102008058436B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip

Publications (2)

Publication Number Publication Date
DE102008058436A1 DE102008058436A1 (de) 2010-05-27
DE102008058436B4 true DE102008058436B4 (de) 2019-03-07

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DE102008058436.3A Active DE102008058436B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip

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US (1) US8831061B2 (https=)
EP (1) EP2347482B1 (https=)
JP (1) JP5528465B2 (https=)
KR (1) KR101637054B1 (https=)
CN (1) CN102224647B (https=)
DE (1) DE102008058436B4 (https=)
PL (1) PL2347482T3 (https=)
WO (1) WO2010057455A2 (https=)

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DE102009056387B9 (de) 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE102011075502A1 (de) * 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
DE102011111604B4 (de) * 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
DE102011055891B9 (de) 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CN103557445A (zh) * 2013-08-26 2014-02-05 中国科学院苏州纳米技术与纳米仿生研究所 侧边发射半导体发光器件、背光模组及面发光光源
US9800020B2 (en) * 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
DE102017103789B4 (de) * 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode
DE102017122330B4 (de) * 2017-09-26 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Halbleiterbauelement
CN110021877B (zh) * 2018-01-10 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 一种脊形波导半导体激光器及其制备方法
RU2685434C1 (ru) * 2018-02-05 2019-04-18 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Инжекционный лазер
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür
WO2020092290A1 (en) 2018-10-30 2020-05-07 Exceutas Canada, Inc. Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition
WO2020092287A1 (en) 2018-11-01 2020-05-07 Excelitas Canada, Inc. Quad flat no-leads package for side emitting laser diode
CN111361781A (zh) * 2018-12-25 2020-07-03 海太半导体（无锡）有限公司 一种宽带激光器带再包装保存方法
DE102019106805A1 (de) * 2019-03-18 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement
DE102020108941B4 (de) * 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
CN115172331B (zh) * 2021-04-06 2025-05-27 芯恩（青岛）集成电路有限公司 晶圆对准标记、制作方法、晶圆对准装置及晶圆对准方法
DE102021122145A1 (de) * 2021-08-26 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung mindestens eines Laserchips und Laserchip
WO2023049297A1 (en) * 2021-09-23 2023-03-30 Freedom Photonics Llc Segmented contact for current control in semiconductor lasers and optical amplifiers
CN120749530B (zh) * 2025-09-02 2025-11-18 深圳市星汉激光科技股份有限公司 一种集成量子点阵列的可调谐激光芯片及制备方法

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EP2347482A2 (de) 2011-07-27
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JP2012509580A (ja) 2012-04-19
EP2347482B1 (de) 2017-01-25
KR20110097856A (ko) 2011-08-31
DE102008058436A1 (de) 2010-05-27
JP5528465B2 (ja) 2014-06-25
US20110243169A1 (en) 2011-10-06
CN102224647B (zh) 2013-09-18
KR101637054B1 (ko) 2016-07-06
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PL2347482T3 (pl) 2017-07-31

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