KR101637054B1 - 에지방출형 반도체 레이저칩 - Google Patents

에지방출형 반도체 레이저칩 Download PDF

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KR101637054B1
KR101637054B1 KR1020117014107A KR20117014107A KR101637054B1 KR 101637054 B1 KR101637054 B1 KR 101637054B1 KR 1020117014107 A KR1020117014107 A KR 1020117014107A KR 20117014107 A KR20117014107 A KR 20117014107A KR 101637054 B1 KR101637054 B1 KR 101637054B1
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contact strip
structures
semiconductor laser
limiting
contact
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KR20110097856A (ko
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크리스티안 라우어
하랄드 쾨니히
볼프강 레일
우베 스트라우스
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
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    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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    • H01S2301/00—Functional characteristics
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
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    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
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    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Acoustics & Sound (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
KR1020117014107A 2008-11-21 2009-10-21 에지방출형 반도체 레이저칩 Active KR101637054B1 (ko)

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Application Number Priority Date Filing Date Title
DE102008058436.3A DE102008058436B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaserchip
DE102008058436.3 2008-11-21

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KR20110097856A KR20110097856A (ko) 2011-08-31
KR101637054B1 true KR101637054B1 (ko) 2016-07-06

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US (1) US8831061B2 (https=)
EP (1) EP2347482B1 (https=)
JP (1) JP5528465B2 (https=)
KR (1) KR101637054B1 (https=)
CN (1) CN102224647B (https=)
DE (1) DE102008058436B4 (https=)
PL (1) PL2347482T3 (https=)
WO (1) WO2010057455A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE102011075502A1 (de) * 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
DE102011111604B4 (de) * 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
DE102011055891B9 (de) 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CN103557445A (zh) * 2013-08-26 2014-02-05 中国科学院苏州纳米技术与纳米仿生研究所 侧边发射半导体发光器件、背光模组及面发光光源
US9800020B2 (en) * 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
DE102017103789B4 (de) * 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode
DE102017122330B4 (de) * 2017-09-26 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Halbleiterbauelement
CN110021877B (zh) * 2018-01-10 2021-02-23 中国科学院苏州纳米技术与纳米仿生研究所 一种脊形波导半导体激光器及其制备方法
RU2685434C1 (ru) * 2018-02-05 2019-04-18 Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ Инжекционный лазер
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür
WO2020092290A1 (en) 2018-10-30 2020-05-07 Exceutas Canada, Inc. Low inductance laser driver packaging using lead-frame and thin dielectric layer mask pad definition
WO2020092287A1 (en) 2018-11-01 2020-05-07 Excelitas Canada, Inc. Quad flat no-leads package for side emitting laser diode
CN111361781A (zh) * 2018-12-25 2020-07-03 海太半导体（无锡）有限公司 一种宽带激光器带再包装保存方法
DE102019106805A1 (de) * 2019-03-18 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip und strahlungsemittierendes halbleiterbauelement
DE102020108941B4 (de) * 2020-03-31 2022-05-25 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Diodenlaser mit verrringerter Strahldivergenz
CN115172331B (zh) * 2021-04-06 2025-05-27 芯恩（青岛）集成电路有限公司 晶圆对准标记、制作方法、晶圆对准装置及晶圆对准方法
DE102021122145A1 (de) * 2021-08-26 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung mindestens eines Laserchips und Laserchip
WO2023049297A1 (en) * 2021-09-23 2023-03-30 Freedom Photonics Llc Segmented contact for current control in semiconductor lasers and optical amplifiers
CN120749530B (zh) * 2025-09-02 2025-11-18 深圳市星汉激光科技股份有限公司 一种集成量子点阵列的可调谐激光芯片及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513200A (en) 1992-09-22 1996-04-30 Xerox Corporation Monolithic array of independently addressable diode lasers

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513152B2 (https=) * 1972-11-10 1980-04-07
JPS5029283A (https=) * 1973-07-19 1975-03-25
US4694459A (en) 1985-05-31 1987-09-15 Xerox Corporation Hybrid gain/index guided semiconductor lasers and array lasers
CA2011155C (en) 1989-03-06 1994-04-19 Misuzu Sagawa Semiconductor laser device
US5272711A (en) 1992-05-12 1993-12-21 Trw Inc. High-power semiconductor laser diode
JP3356436B2 (ja) 1997-01-27 2002-12-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レーザ装置
JPH10215024A (ja) * 1997-01-29 1998-08-11 Alps Electric Co Ltd 半導体レ−ザ
JPH11191654A (ja) * 1997-12-26 1999-07-13 Hitachi Ltd 半導体レーザ装置及びその製造方法
US6122299A (en) 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
KR100580241B1 (ko) * 1999-01-23 2006-05-16 삼성전자주식회사 표면광 레이저 어레이 및 그 제조방법
UA73736C2 (en) 1999-04-29 2005-09-15 Euro Celtic S A Method for alleviating or preventing insomnia and inducing anesthesia
US6757313B1 (en) * 1999-11-12 2004-06-29 Trumpf Photonics Inc. Control of current spreading in semiconductor laser diodes
GB2397692B (en) 2000-02-21 2004-09-22 Sony Corp Semiconductor laser emitting apparatus
JP4785327B2 (ja) 2000-06-15 2011-10-05 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー 半導体レーザー用レーザー共振器及びレーザー共振器を製造する方法
JP4126878B2 (ja) 2001-01-31 2008-07-30 日亜化学工業株式会社 窒化ガリウム系化合物半導体レーザ
JP2002305352A (ja) * 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd 半導体レーザ素子
US7190843B2 (en) 2002-02-01 2007-03-13 Siemens Corporate Research, Inc. Integrated approach to brightness and contrast normalization in appearance-based object detection
DE10208463B4 (de) 2002-02-27 2012-04-05 Osram Opto Semiconductors Gmbh Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US20030219053A1 (en) 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
US7315559B2 (en) * 2002-06-26 2008-01-01 Ammono Sp. Z O.O. Nitride semiconductor laser device and a method for improving its performance
KR100489479B1 (ko) * 2003-02-17 2005-05-17 엘지전자 주식회사 반도체 레이저 다이오드 어레이 및 그 제조 방법
US7512167B2 (en) * 2004-09-24 2009-03-31 Sanyo Electric Co., Ltd. Integrated semiconductor laser device and method of fabricating the same
US7310358B2 (en) * 2004-12-17 2007-12-18 Palo Alto Research Center Incorporated Semiconductor lasers
KR100674836B1 (ko) 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
US7542496B2 (en) * 2006-11-10 2009-06-02 Ricoh Company, Ltd. Semiconductor laser device, light scanner, and image forming apparatus
JP4817255B2 (ja) * 2006-12-14 2011-11-16 富士通株式会社 光半導体素子及びその製造方法
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
DE102008014093B4 (de) 2007-12-27 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
DE102008014092A1 (de) 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513200A (en) 1992-09-22 1996-04-30 Xerox Corporation Monolithic array of independently addressable diode lasers

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US8831061B2 (en) 2014-09-09
EP2347482A2 (de) 2011-07-27
CN102224647A (zh) 2011-10-19
JP2012509580A (ja) 2012-04-19
EP2347482B1 (de) 2017-01-25
KR20110097856A (ko) 2011-08-31
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US20110243169A1 (en) 2011-10-06
CN102224647B (zh) 2013-09-18
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