DE102005041095A1 - Lichtemissionsvorrichtung und Lichtemissionselement - Google Patents
Lichtemissionsvorrichtung und Lichtemissionselement Download PDFInfo
- Publication number
- DE102005041095A1 DE102005041095A1 DE102005041095A DE102005041095A DE102005041095A1 DE 102005041095 A1 DE102005041095 A1 DE 102005041095A1 DE 102005041095 A DE102005041095 A DE 102005041095A DE 102005041095 A DE102005041095 A DE 102005041095A DE 102005041095 A1 DE102005041095 A1 DE 102005041095A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- light emitting
- led element
- layer
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004253447 | 2004-08-31 | ||
| JP2004-253447 | 2004-08-31 | ||
| JP2005204983A JP2006100787A (ja) | 2004-08-31 | 2005-07-13 | 発光装置および発光素子 |
| JP2005-204983 | 2005-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102005041095A1 true DE102005041095A1 (de) | 2006-05-11 |
Family
ID=35941797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102005041095A Withdrawn DE102005041095A1 (de) | 2004-08-31 | 2005-08-30 | Lichtemissionsvorrichtung und Lichtemissionselement |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7453092B2 (https=) |
| JP (1) | JP2006100787A (https=) |
| DE (1) | DE102005041095A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011012608A1 (de) * | 2011-02-28 | 2012-08-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Lichtauskoppelstrukturen in einem Halbleiterkörper und Licht emittierender Halbleiterkörper |
| WO2019091830A1 (de) * | 2017-11-09 | 2019-05-16 | Osram Opto Semiconductors Gmbh | Träger, anordnung mit einem substrat und einem träger und verfahren zum herstellen eines trägers |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1759492B (zh) * | 2003-03-10 | 2010-04-28 | 丰田合成株式会社 | 固体元件装置的制造方法 |
| WO2007009042A1 (en) * | 2005-07-11 | 2007-01-18 | Gelcore Llc | Laser lift-off led with improved light extraction |
| US7863639B2 (en) * | 2006-04-12 | 2011-01-04 | Semileds Optoelectronics Co. Ltd. | Light-emitting diode lamp with low thermal resistance |
| US8373195B2 (en) | 2006-04-12 | 2013-02-12 | SemiLEDs Optoelectronics Co., Ltd. | Light-emitting diode lamp with low thermal resistance |
| US20070257271A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with encapsulated converging optical element |
| US7390117B2 (en) * | 2006-05-02 | 2008-06-24 | 3M Innovative Properties Company | LED package with compound converging optical element |
| US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
| US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
| US7953293B2 (en) * | 2006-05-02 | 2011-05-31 | Ati Technologies Ulc | Field sequence detector, method and video device |
| US20070257270A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with wedge-shaped optical element |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| WO2008011377A2 (en) * | 2006-07-17 | 2008-01-24 | 3M Innovative Properties Company | Led package with converging extractor |
| US7439548B2 (en) * | 2006-08-11 | 2008-10-21 | Bridgelux, Inc | Surface mountable chip |
| JP2008066557A (ja) * | 2006-09-08 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| JP2008108952A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体発光装置および半導体発光装置の製造方法 |
| JP2008300501A (ja) * | 2007-05-30 | 2008-12-11 | Panasonic Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
| EP2003702A1 (en) * | 2007-06-13 | 2008-12-17 | High Power Optoelectronics Inc. | Semiconductor light emitting device and method of fabricating the same |
| US7867793B2 (en) * | 2007-07-09 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Substrate removal during LED formation |
| US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US8410511B2 (en) * | 2008-10-17 | 2013-04-02 | Goldeneye, Inc. | Methods for high temperature processing of epitaxial chips |
| JP2010245481A (ja) * | 2009-04-10 | 2010-10-28 | Sharp Corp | 発光装置 |
| DE102009051746A1 (de) * | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| CN102804430B (zh) * | 2010-01-19 | 2015-11-25 | Lg伊诺特有限公司 | 封装结构及其制造方法 |
| JP5446915B2 (ja) * | 2010-01-21 | 2014-03-19 | セイコーエプソン株式会社 | 生体情報検出器及び生体情報測定装置 |
| EP3547380B1 (en) * | 2010-02-09 | 2023-12-20 | Nichia Corporation | Light emitting device |
| US8319247B2 (en) * | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
| CN102823000B (zh) | 2010-04-08 | 2016-08-03 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
| JP5731761B2 (ja) * | 2010-05-18 | 2015-06-10 | シチズン電子株式会社 | 発光装置 |
| JP5725022B2 (ja) * | 2010-05-31 | 2015-05-27 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| US10308545B2 (en) | 2010-10-26 | 2019-06-04 | Schott Ag | Highly refractive thin glasses |
| US10343946B2 (en) | 2010-10-26 | 2019-07-09 | Schott Ag | Highly refractive thin glasses |
| DE102010042945A1 (de) * | 2010-10-26 | 2012-04-26 | Schott Ag | Transparente Schichtverbunde |
| JP5002703B2 (ja) | 2010-12-08 | 2012-08-15 | 株式会社東芝 | 半導体発光素子 |
| TW201240145A (en) * | 2011-03-21 | 2012-10-01 | Walsin Lihwa Corp | Light emitting diode and method of manufacturing the same |
| KR101880445B1 (ko) * | 2011-07-14 | 2018-07-24 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛 |
| JP2013033890A (ja) | 2011-08-03 | 2013-02-14 | Toyoda Gosei Co Ltd | 発光装置 |
| US20150001570A1 (en) * | 2011-09-02 | 2015-01-01 | King Dragon International Inc. | LED Package and Method of the Same |
| US9117941B2 (en) * | 2011-09-02 | 2015-08-25 | King Dragon International Inc. | LED package and method of the same |
| JP6119335B2 (ja) * | 2013-03-18 | 2017-04-26 | 日亜化学工業株式会社 | 発光素子保持構造体 |
| JP6147061B2 (ja) * | 2013-04-02 | 2017-06-14 | スタンレー電気株式会社 | フリップチップ型半導体発光素子、半導体装置及びその製造方法 |
| CN105428510B (zh) * | 2014-09-03 | 2018-01-30 | 展晶科技(深圳)有限公司 | 覆晶式发光二极管封装结构 |
| US11610868B2 (en) * | 2019-01-29 | 2023-03-21 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| US11271143B2 (en) | 2019-01-29 | 2022-03-08 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| WO2020229576A2 (de) | 2019-05-14 | 2020-11-19 | Osram Opto Semiconductors Gmbh | Beleuchtungseinheit, verfahren zur herstellung einer beleuchtungseinheit, konverterelement für ein opto-elektronisches bauelement, strahlungsquelle mit einer led und einem konverterelement, auskoppelstruktur, und optoelektronische vorrichtung |
| KR20210120106A (ko) | 2019-02-11 | 2021-10-06 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 부품, 광전자 조립체 및 방법 |
| JP7604394B2 (ja) | 2019-04-23 | 2024-12-23 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | Ledモジュール、ledディスプレイモジュール、および当該モジュールを製造する方法 |
| US11538852B2 (en) | 2019-04-23 | 2022-12-27 | Osram Opto Semiconductors Gmbh | μ-LED, μ-LED device, display and method for the same |
| JP7071648B2 (ja) | 2019-05-16 | 2022-05-19 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| CN114730824A (zh) | 2019-09-20 | 2022-07-08 | 奥斯兰姆奥普托半导体股份有限两合公司 | 光电组件、半导体结构和方法 |
| US20240079530A1 (en) * | 2022-09-06 | 2024-03-07 | Intel Corporation | Ic package with micro leds |
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| DE4219287A1 (de) * | 1992-06-12 | 1993-12-16 | Merck Patent Gmbh | Anorganische Füllstoffe und organische Matrixmaterialien mit Brechungsindex-Anpassung |
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| US5742120A (en) * | 1996-05-10 | 1998-04-21 | Rebif Corporation | Light-emmiting diode lamp with directional coverage for the emmitted light |
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| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
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| DE19911717A1 (de) | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
| JP3533345B2 (ja) * | 1999-07-13 | 2004-05-31 | サンケン電気株式会社 | 半導体発光装置 |
| DE19947030A1 (de) | 1999-09-30 | 2001-04-19 | Osram Opto Semiconductors Gmbh | Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung |
| JP3455512B2 (ja) * | 1999-11-17 | 2003-10-14 | 日本碍子株式会社 | エピタキシャル成長用基板およびその製造方法 |
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| TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| DE10020464A1 (de) | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| AU2002217845A1 (en) | 2000-11-16 | 2002-05-27 | Emcore Corporation | Microelectronic package having improved light extraction |
| US6518600B1 (en) * | 2000-11-17 | 2003-02-11 | General Electric Company | Dual encapsulation for an LED |
| ATE425556T1 (de) | 2001-04-12 | 2009-03-15 | Matsushita Electric Works Ltd | Lichtquellenbauelement mit led und verfahren zu seiner herstellung |
| JP4107814B2 (ja) * | 2001-07-06 | 2008-06-25 | 豊田合成株式会社 | 発光素子 |
| US6946788B2 (en) * | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
| JP2002364323A (ja) * | 2001-06-01 | 2002-12-18 | Kawasaki Heavy Ind Ltd | 小型船舶用4サイクルエンジン |
| TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
| JP4244542B2 (ja) | 2001-08-28 | 2009-03-25 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
| TWI278995B (en) * | 2002-01-28 | 2007-04-11 | Nichia Corp | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element |
| DE20220258U1 (de) | 2002-09-20 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Halbleiterchip |
| JP4053926B2 (ja) * | 2002-05-27 | 2008-02-27 | 日亜化学工業株式会社 | 窒化物半導体発光素子とそれを用いた発光装置 |
| DE10234977A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis |
| US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
| DE10245628A1 (de) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
| CN1759492B (zh) | 2003-03-10 | 2010-04-28 | 丰田合成株式会社 | 固体元件装置的制造方法 |
| JP4805831B2 (ja) * | 2004-03-18 | 2011-11-02 | パナソニック株式会社 | 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 |
-
2005
- 2005-07-13 JP JP2005204983A patent/JP2006100787A/ja active Pending
- 2005-08-30 US US11/214,018 patent/US7453092B2/en not_active Expired - Lifetime
- 2005-08-30 DE DE102005041095A patent/DE102005041095A1/de not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011012608A1 (de) * | 2011-02-28 | 2012-08-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Lichtauskoppelstrukturen in einem Halbleiterkörper und Licht emittierender Halbleiterkörper |
| WO2019091830A1 (de) * | 2017-11-09 | 2019-05-16 | Osram Opto Semiconductors Gmbh | Träger, anordnung mit einem substrat und einem träger und verfahren zum herstellen eines trägers |
| US11810845B2 (en) | 2017-11-09 | 2023-11-07 | Osram Oled Gmbh | Carrier, assembly comprising a substrate and a carrier, and method for producing a carrier |
Also Published As
| Publication number | Publication date |
|---|---|
| US7453092B2 (en) | 2008-11-18 |
| US20060043402A1 (en) | 2006-03-02 |
| JP2006100787A (ja) | 2006-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20120301 |