DE102004046793B3 - Nicht-flüchtiges Speicherelement - Google Patents

Nicht-flüchtiges Speicherelement Download PDF

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Publication number
DE102004046793B3
DE102004046793B3 DE102004046793A DE102004046793A DE102004046793B3 DE 102004046793 B3 DE102004046793 B3 DE 102004046793B3 DE 102004046793 A DE102004046793 A DE 102004046793A DE 102004046793 A DE102004046793 A DE 102004046793A DE 102004046793 B3 DE102004046793 B3 DE 102004046793B3
Authority
DE
Germany
Prior art keywords
terminal
mos transistor
data
memory element
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102004046793A
Other languages
German (de)
English (en)
Inventor
Gregor Schatzberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram AG
Original Assignee
Austriamicrosystems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems AG filed Critical Austriamicrosystems AG
Priority to DE102004046793A priority Critical patent/DE102004046793B3/de
Priority to EP05786247A priority patent/EP1794758B1/de
Priority to PCT/EP2005/009881 priority patent/WO2006034782A1/de
Priority to US11/576,082 priority patent/US7602640B2/en
Priority to JP2007532804A priority patent/JP4673893B2/ja
Priority to DE502005005969T priority patent/DE502005005969D1/de
Priority to TW094132792A priority patent/TWI281162B/zh
Application granted granted Critical
Publication of DE102004046793B3 publication Critical patent/DE102004046793B3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE102004046793A 2004-09-27 2004-09-27 Nicht-flüchtiges Speicherelement Expired - Fee Related DE102004046793B3 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102004046793A DE102004046793B3 (de) 2004-09-27 2004-09-27 Nicht-flüchtiges Speicherelement
EP05786247A EP1794758B1 (de) 2004-09-27 2005-09-14 Nicht-flüchtiges speicherelement
PCT/EP2005/009881 WO2006034782A1 (de) 2004-09-27 2005-09-14 Nicht-flüchtiges speicherelement
US11/576,082 US7602640B2 (en) 2004-09-27 2005-09-14 Non-volatile storage element
JP2007532804A JP4673893B2 (ja) 2004-09-27 2005-09-14 不揮発性記憶素子
DE502005005969T DE502005005969D1 (de) 2004-09-27 2005-09-14 Nicht-flüchtiges speicherelement
TW094132792A TWI281162B (en) 2004-09-27 2005-09-22 Non-volatile memory-element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004046793A DE102004046793B3 (de) 2004-09-27 2004-09-27 Nicht-flüchtiges Speicherelement

Publications (1)

Publication Number Publication Date
DE102004046793B3 true DE102004046793B3 (de) 2006-05-11

Family

ID=35276175

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102004046793A Expired - Fee Related DE102004046793B3 (de) 2004-09-27 2004-09-27 Nicht-flüchtiges Speicherelement
DE502005005969T Expired - Lifetime DE502005005969D1 (de) 2004-09-27 2005-09-14 Nicht-flüchtiges speicherelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502005005969T Expired - Lifetime DE502005005969D1 (de) 2004-09-27 2005-09-14 Nicht-flüchtiges speicherelement

Country Status (6)

Country Link
US (1) US7602640B2 (cg-RX-API-DMAC7.html)
EP (1) EP1794758B1 (cg-RX-API-DMAC7.html)
JP (1) JP4673893B2 (cg-RX-API-DMAC7.html)
DE (2) DE102004046793B3 (cg-RX-API-DMAC7.html)
TW (1) TWI281162B (cg-RX-API-DMAC7.html)
WO (1) WO2006034782A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007030842A1 (de) 2007-07-03 2009-01-08 Austriamicrosystems Ag Speicheranordnung und Verfahren zum Speichern

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080019162A1 (en) * 2006-07-21 2008-01-24 Taku Ogura Non-volatile semiconductor storage device
WO2008051940A2 (en) * 2006-10-23 2008-05-02 Virident Systems, Inc. Methods and apparatus of dual inline memory modules for flash memory
US7916539B2 (en) * 2009-01-23 2011-03-29 Analog Devices, Inc. Differential, level-shifted EEPROM structures
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
US12218598B2 (en) * 2022-05-31 2025-02-04 Texas Instruments Incorporated Quasi-resonant isolated voltage converter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523971A (en) * 1995-03-16 1996-06-04 Xilinx, Inc. Non-volatile memory cell for programmable logic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132904A (en) 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
US4348745A (en) 1980-10-27 1982-09-07 Hughes Aircraft Company Non-volatile random access memory having non-inverted storage
JPH0562487A (ja) * 1991-09-06 1993-03-12 Toshiba Corp プログラマブル初期動作モード設定回路
JP3450896B2 (ja) * 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US5648930A (en) 1996-06-28 1997-07-15 Symbios Logic Inc. Non-volatile memory which is programmable from a power source
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6411545B1 (en) 1999-11-19 2002-06-25 John Millard And Pamela Ann Caywood 1989 Revokable Living Trust Non-volatile latch
US7663917B2 (en) * 2003-06-17 2010-02-16 Nxp B.V. Non-volatile static memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523971A (en) * 1995-03-16 1996-06-04 Xilinx, Inc. Non-volatile memory cell for programmable logic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007030842A1 (de) 2007-07-03 2009-01-08 Austriamicrosystems Ag Speicheranordnung und Verfahren zum Speichern
US8537586B2 (en) 2007-07-03 2013-09-17 Ams Ag Memory array and storage method
DE102007030842B4 (de) * 2007-07-03 2015-05-21 Austriamicrosystems Ag Speicheranordnung und Verfahren zum Speichern

Also Published As

Publication number Publication date
US20080165583A1 (en) 2008-07-10
WO2006034782A1 (de) 2006-04-06
TWI281162B (en) 2007-05-11
EP1794758A1 (de) 2007-06-13
JP4673893B2 (ja) 2011-04-20
US7602640B2 (en) 2009-10-13
DE502005005969D1 (de) 2008-12-24
EP1794758B1 (de) 2008-11-12
JP2008515122A (ja) 2008-05-08
TW200614248A (cg-RX-API-DMAC7.html) 2006-05-01

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140401