DE102004035560A1 - Substrat für Fotomaskenrohling, Fotomaskenrohling und Fotomaske - Google Patents

Substrat für Fotomaskenrohling, Fotomaskenrohling und Fotomaske Download PDF

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Publication number
DE102004035560A1
DE102004035560A1 DE102004035560A DE102004035560A DE102004035560A1 DE 102004035560 A1 DE102004035560 A1 DE 102004035560A1 DE 102004035560 A DE102004035560 A DE 102004035560A DE 102004035560 A DE102004035560 A DE 102004035560A DE 102004035560 A1 DE102004035560 A1 DE 102004035560A1
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Germany
Prior art keywords
substrate
strip
photomask
shaped
blank
Prior art date
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Granted
Application number
DE102004035560A
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English (en)
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DE102004035560B4 (de
Inventor
Masayuki Nakatsu
Tsuneo Numanami
Masayuki Mogi
Masamitsu Itoh
Tsuneyuki Hagiwara
Naoto Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Nikon Corp
Kioxia Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Toshiba Corp
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003280437A external-priority patent/JP4340859B2/ja
Priority claimed from JP2003280462A external-priority patent/JP4657591B2/ja
Application filed by Shin Etsu Chemical Co Ltd, Toshiba Corp, Nikon Corp, Nippon Kogaku KK filed Critical Shin Etsu Chemical Co Ltd
Publication of DE102004035560A1 publication Critical patent/DE102004035560A1/de
Application granted granted Critical
Publication of DE102004035560B4 publication Critical patent/DE102004035560B4/de
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

Abstract

Viereckiges Substrat für einen Fotomaskenrohling mit einer Länge von mindestens 6 Zoll auf jeder Seite, das ein Paar von streifenförmigen Bereichen aufweist, die sich zwischen 2 und 10 mm innerhalb jeder eines Paares von gegenüberliegenden Seiten entlang eines äußeren Randes einer Deckfläche des Substrats erstrecken, wobei an jedem Ende ein Kantenabschnitt von 2 mm ausgenommen ist, jeder streifenförmige Bereich nach unten in Richtung auf den äußeren Rand des Substrats geneigt ist, und die Differenz zwischen Maximal- und Minimalwerten für die Höhe zwischen der Ebene der kleinsten Quadrate für die streifenförmigen Bereiche und den streifenförmigen Bereichen selbst höchstens 0,5 mum beträgt. Das Substrat zeigt eine gute Oberflächenebenheit zur Zeit der Waferbelichtung.
DE102004035560.6A 2003-07-25 2004-07-22 Substrat für Fotomaskenrohling, Fotomaskenrohling und Fotomaske Active DE102004035560B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003280437A JP4340859B2 (ja) 2003-07-25 2003-07-25 フォトマスクブランク用基板の選定方法
JP2003-280437 2003-07-25
JP2003-280462 2003-07-25
JP2003280462A JP4657591B2 (ja) 2003-07-25 2003-07-25 フォトマスクブランク用基板の選定方法

Publications (2)

Publication Number Publication Date
DE102004035560A1 true DE102004035560A1 (de) 2005-03-10
DE102004035560B4 DE102004035560B4 (de) 2018-05-17

Family

ID=34082399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004035560.6A Active DE102004035560B4 (de) 2003-07-25 2004-07-22 Substrat für Fotomaskenrohling, Fotomaskenrohling und Fotomaske

Country Status (4)

Country Link
US (1) US7351504B2 (de)
KR (1) KR100591602B1 (de)
DE (1) DE102004035560B4 (de)
TW (1) TWI329779B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745074B2 (en) 2004-09-29 2010-06-29 Hoya Corporation Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
DE102009036618B4 (de) * 2008-08-07 2016-08-04 Hoya Corporation Herstellungsverfahren für ein Maskenrohlingsubstrat, für einen Maskenrohling, für eine Photomaske und für ein Halbleiterbauelement
DE102009043442B4 (de) * 2008-10-01 2020-12-24 Hoya Corp. Maskenrohlingssubstratsatz und Verfahren zum Herstellen eines Maskenrohlingssatzes, eines Photomaskensatzes und eines Halbleiterbauelements

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
JP2005043836A (ja) 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
JP4314462B2 (ja) * 2003-07-25 2009-08-19 信越化学工業株式会社 フォトマスクブランク用基板の製造方法
JP4488822B2 (ja) * 2004-07-27 2010-06-23 株式会社東芝 露光用マスクの製造方法、露光装置、半導体装置の製造方法およびマスクブランクス製品
KR101263496B1 (ko) * 2005-06-29 2013-05-13 엘지디스플레이 주식회사 컬러필터기판 및 그 제조방법
JP5526895B2 (ja) * 2009-04-01 2014-06-18 信越化学工業株式会社 大型合成石英ガラス基板の製造方法
MY155168A (en) 2009-12-11 2015-09-15 Shinetsu Chemical Co Photomask-forming glass substrate and making method
JP5637062B2 (ja) 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
JP5900773B2 (ja) 2010-11-05 2016-04-06 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP5937873B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP5937409B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板、フォトマスク、フォトマスクの製造方法、及びパターン転写方法
JP5497693B2 (ja) * 2011-06-10 2014-05-21 Ｈｏｙａ株式会社 フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法
JP6698438B2 (ja) * 2016-06-17 2020-05-27 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062632A (ja) * 2000-08-21 2002-02-28 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
CN1507649A (zh) 2001-02-13 2004-06-23 株式会社尼康 保持装置、保持方法、曝光装置以及器件制造方法
JP3572053B2 (ja) 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
US6537844B1 (en) 2001-05-31 2003-03-25 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
JP4561950B2 (ja) 2001-08-08 2010-10-13 信越化学工業株式会社 角形基板
KR100964772B1 (ko) * 2002-03-29 2010-06-23 호야 가부시키가이샤 포토마스크 블랭크의 제조 방법 및 제조 장치와, 불필요한 막 제거 장치
DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
DE112004000465B4 (de) 2003-03-20 2018-01-25 Hoya Corp. Retikelsubstrat, Verfahren zum Herstellen des Substrats, Maskenrohling und Verfahren zum Herstellen des Maskenrohlings
JP2005043836A (ja) 2003-07-25 2005-02-17 Shin Etsu Chem Co Ltd フォトマスクブランク用基板の選定方法
JP4314462B2 (ja) 2003-07-25 2009-08-19 信越化学工業株式会社 フォトマスクブランク用基板の製造方法
JP4232018B2 (ja) 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745074B2 (en) 2004-09-29 2010-06-29 Hoya Corporation Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
US7892708B2 (en) 2004-09-29 2011-02-22 Hoya Corporation Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
DE102005046135B4 (de) * 2004-09-29 2017-04-13 Hoya Corp. Substrat für Maskenrohling, Maskenrohling, Belichtungsmaske und Herstellungsverfahren für Maskenrohlingssubstrat
DE102005063624B4 (de) 2004-09-29 2019-06-27 Hoya Corp. Substrat für Maskenrohling, Maskenrohling, Belichtungsmaske und Herstellungsverfahren für Maskenrohlingssubstrat
DE102009036618B4 (de) * 2008-08-07 2016-08-04 Hoya Corporation Herstellungsverfahren für ein Maskenrohlingsubstrat, für einen Maskenrohling, für eine Photomaske und für ein Halbleiterbauelement
DE102009043442B4 (de) * 2008-10-01 2020-12-24 Hoya Corp. Maskenrohlingssubstratsatz und Verfahren zum Herstellen eines Maskenrohlingssatzes, eines Photomaskensatzes und eines Halbleiterbauelements

Also Published As

Publication number Publication date
KR100591602B1 (ko) 2006-06-20
TWI329779B (en) 2010-09-01
US20050019677A1 (en) 2005-01-27
US7351504B2 (en) 2008-04-01
TW200510918A (en) 2005-03-16
DE102004035560B4 (de) 2018-05-17
KR20050012686A (ko) 2005-02-02

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