DE10196596T1 - Verbindungshalbleiter-Mehrschichtsstruktur und Bipolar-Transistor unter Verwendung derselben - Google Patents
Verbindungshalbleiter-Mehrschichtsstruktur und Bipolar-Transistor unter Verwendung derselbenInfo
- Publication number
- DE10196596T1 DE10196596T1 DE10196596T DE10196596T DE10196596T1 DE 10196596 T1 DE10196596 T1 DE 10196596T1 DE 10196596 T DE10196596 T DE 10196596T DE 10196596 T DE10196596 T DE 10196596T DE 10196596 T1 DE10196596 T1 DE 10196596T1
- Authority
- DE
- Germany
- Prior art keywords
- same
- compound semiconductor
- bipolar transistor
- multilayer structure
- semiconductor multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-272840 | 2000-09-08 | ||
JP2000272840A JP2002083816A (ja) | 2000-09-08 | 2000-09-08 | 化合物半導体ヘテロ接合構造体 |
US23773000P | 2000-10-05 | 2000-10-05 | |
US60/237,730 | 2000-10-05 | ||
JP2000362534A JP2002164533A (ja) | 2000-11-29 | 2000-11-29 | 化合物半導体積層構造体及びそれを用いたバイポーラトランジスタ |
JP2000-362534 | 2000-11-29 | ||
US25489700P | 2000-12-13 | 2000-12-13 | |
US60/254,897 | 2000-12-13 | ||
PCT/JP2001/007536 WO2002021599A2 (en) | 2000-09-08 | 2001-08-31 | Compound semiconductor multilayer structure and bipolar transistor using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10196596T1 true DE10196596T1 (de) | 2003-07-10 |
DE10196596B4 DE10196596B4 (de) | 2009-03-05 |
Family
ID=27481599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10196596T Expired - Fee Related DE10196596B4 (de) | 2000-09-08 | 2001-08-31 | Verfahren zur Herstellung einer Kristallschicht in einer Verbindungshalbleiter-Mehrschichtsstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US6876013B2 (de) |
AU (1) | AU2001282579A1 (de) |
DE (1) | DE10196596B4 (de) |
WO (1) | WO2002021599A2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6955858B2 (en) * | 2001-12-07 | 2005-10-18 | North Carolina State University | Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same |
TWI281833B (en) | 2004-10-28 | 2007-05-21 | Kyocera Corp | Heater, wafer heating apparatus and method for manufacturing heater |
JP2007335508A (ja) * | 2006-06-13 | 2007-12-27 | Nec Electronics Corp | 電界効果トランジスタおよびその製造方法 |
US20190272994A1 (en) * | 2009-10-14 | 2019-09-05 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
EP2628183A4 (de) * | 2010-10-12 | 2014-04-02 | Alliance Sustainable Energy | Gruppe-iii-v-legierungen mit hoher bandlücke für hocheffiziente optoelektronik |
JP6303998B2 (ja) * | 2014-11-28 | 2018-04-04 | 三菱電機株式会社 | アバランシェフォトダイオードの製造方法 |
JP6852703B2 (ja) * | 2018-03-16 | 2021-03-31 | 信越半導体株式会社 | 炭素濃度評価方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162471A (ja) * | 1994-12-01 | 1996-06-21 | Furukawa Electric Co Ltd:The | ヘテロ接合バイポーラトランジスタ |
JP3537246B2 (ja) * | 1995-11-14 | 2004-06-14 | 三菱電機株式会社 | 化合物半導体装置の製造方法 |
JP3227083B2 (ja) | 1996-01-24 | 2001-11-12 | 日本電信電話株式会社 | バイポーラトランジスタの作製方法 |
-
2001
- 2001-08-31 US US10/363,315 patent/US6876013B2/en not_active Expired - Fee Related
- 2001-08-31 DE DE10196596T patent/DE10196596B4/de not_active Expired - Fee Related
- 2001-08-31 AU AU2001282579A patent/AU2001282579A1/en not_active Abandoned
- 2001-08-31 WO PCT/JP2001/007536 patent/WO2002021599A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US6876013B2 (en) | 2005-04-05 |
US20030183816A1 (en) | 2003-10-02 |
WO2002021599A2 (en) | 2002-03-14 |
DE10196596B4 (de) | 2009-03-05 |
WO2002021599A3 (en) | 2002-06-20 |
AU2001282579A1 (en) | 2002-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 10196596 Country of ref document: DE Date of ref document: 20030710 Kind code of ref document: P |
|
8125 | Change of the main classification |
Ipc: H01L 29207 |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130301 |