DE10047152B4 - Hochvolt-Diode und Verfahren zu deren Herstellung - Google Patents
Hochvolt-Diode und Verfahren zu deren Herstellung Download PDFInfo
- Publication number
- DE10047152B4 DE10047152B4 DE10047152A DE10047152A DE10047152B4 DE 10047152 B4 DE10047152 B4 DE 10047152B4 DE 10047152 A DE10047152 A DE 10047152A DE 10047152 A DE10047152 A DE 10047152A DE 10047152 B4 DE10047152 B4 DE 10047152B4
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- voltage diode
- main surface
- conductivity type
- trough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000001465 metallisation Methods 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910001385 heavy metal Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
- 238000009279 wet oxidation reaction Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 108091006146 Channels Proteins 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 206010022000 influenza Diseases 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/043—Manufacture or treatment of planar diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10047152A DE10047152B4 (de) | 2000-09-22 | 2000-09-22 | Hochvolt-Diode und Verfahren zu deren Herstellung |
| PCT/DE2001/003240 WO2002025740A1 (de) | 2000-09-22 | 2001-08-24 | Hochvolt-diode und verfahren zu deren herstellung |
| JP2002529847A JP2004510333A (ja) | 2000-09-22 | 2001-08-24 | 高電圧ダイオードおよびその製造方法 |
| EP01964927A EP1307923B1 (de) | 2000-09-22 | 2001-08-24 | Hochvolt-diode und verfahren zu deren herstellung |
| DE50107925T DE50107925D1 (de) | 2000-09-22 | 2001-08-24 | Hochvolt-diode und verfahren zu deren herstellung |
| US10/395,425 US6770917B2 (en) | 2000-09-22 | 2003-03-24 | High-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10047152A DE10047152B4 (de) | 2000-09-22 | 2000-09-22 | Hochvolt-Diode und Verfahren zu deren Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10047152A1 DE10047152A1 (de) | 2002-04-25 |
| DE10047152B4 true DE10047152B4 (de) | 2006-07-06 |
Family
ID=7657337
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10047152A Expired - Fee Related DE10047152B4 (de) | 2000-09-22 | 2000-09-22 | Hochvolt-Diode und Verfahren zu deren Herstellung |
| DE50107925T Expired - Lifetime DE50107925D1 (de) | 2000-09-22 | 2001-08-24 | Hochvolt-diode und verfahren zu deren herstellung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE50107925T Expired - Lifetime DE50107925D1 (de) | 2000-09-22 | 2001-08-24 | Hochvolt-diode und verfahren zu deren herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6770917B2 (enExample) |
| EP (1) | EP1307923B1 (enExample) |
| JP (1) | JP2004510333A (enExample) |
| DE (2) | DE10047152B4 (enExample) |
| WO (1) | WO2002025740A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
| DE102004002908B4 (de) * | 2004-01-20 | 2008-01-24 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiterbauelements oder einer mikromechanischen Struktur |
| DE102006011697B4 (de) * | 2006-03-14 | 2012-01-26 | Infineon Technologies Austria Ag | Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung |
| US7538412B2 (en) * | 2006-06-30 | 2009-05-26 | Infineon Technologies Austria Ag | Semiconductor device with a field stop zone |
| JP2008177296A (ja) * | 2007-01-17 | 2008-07-31 | Toyota Central R&D Labs Inc | 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法 |
| DE102007062305B3 (de) | 2007-12-21 | 2009-05-28 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit grabenförmiger Feldringstruktur und Herstellungsverfahren hierzu |
| EP2081233A1 (de) * | 2007-12-21 | 2009-07-22 | SEMIKRON Elektronik GmbH & Co. KG | Leistungsdiode mit grabenförmigen Anodenkontaktbereich |
| US7897471B2 (en) * | 2008-06-19 | 2011-03-01 | Fairchild Semiconductor Corporation | Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices |
| US8013340B2 (en) * | 2008-09-30 | 2011-09-06 | Infineon Technologies Ag | Semiconductor device with semiconductor body and method for the production of a semiconductor device |
| JP2010087196A (ja) * | 2008-09-30 | 2010-04-15 | Panasonic Corp | 半導体装置 |
| US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
| JP5515922B2 (ja) | 2010-03-24 | 2014-06-11 | 富士電機株式会社 | 半導体装置 |
| US9059086B2 (en) | 2011-01-14 | 2015-06-16 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor device |
| WO2012137412A1 (ja) * | 2011-04-05 | 2012-10-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US8759935B2 (en) | 2011-06-03 | 2014-06-24 | Infineon Technologies Austria Ag | Power semiconductor device with high blocking voltage capacity |
| JP5841417B2 (ja) * | 2011-11-30 | 2016-01-13 | 株式会社日立製作所 | 窒化物半導体ダイオード |
| US8884342B2 (en) * | 2012-08-29 | 2014-11-11 | Infineon Technologies Ag | Semiconductor device with a passivation layer |
| JP2018156987A (ja) * | 2017-03-15 | 2018-10-04 | 住友電気工業株式会社 | 半導体装置 |
| CN113594262A (zh) * | 2021-07-14 | 2021-11-02 | 深圳基本半导体有限公司 | 一种快恢复二极管结构及其制造方法 |
| CN114093928B (zh) * | 2021-11-11 | 2023-01-13 | 扬州国宇电子有限公司 | 一种快恢复二极管的铂掺杂方法 |
| US20230420577A1 (en) * | 2022-06-24 | 2023-12-28 | Wolfspeed, Inc. | Semiconductor device with selectively grown field oxide layer in edge termination region |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4487653A (en) * | 1984-03-19 | 1984-12-11 | Advanced Micro Devices, Inc. | Process for forming and locating buried layers |
| EP0341453B1 (de) * | 1988-05-11 | 1993-08-25 | Siemens Aktiengesellschaft | MOS-Halbleiterbauelement für hohe Sperrspannung |
| EP0400178B1 (de) * | 1989-05-31 | 1994-08-03 | Siemens Aktiengesellschaft | Halbleiterbauelement mit Passivierungsschicht |
| EP0381111B1 (de) * | 1989-02-01 | 1995-05-31 | Siemens Aktiengesellschaft | Elektroaktive Passivierschicht |
| DE4410354C2 (de) * | 1994-03-25 | 1996-02-15 | Semikron Elektronik Gmbh | Leistungshalbleiterbauelement |
| DE19837944A1 (de) * | 1998-08-21 | 2000-02-24 | Asea Brown Boveri | Verfahren zur Fertigung eines Halbleiterbauelements |
| DE19851461A1 (de) * | 1998-11-09 | 2000-05-18 | Semikron Elektronik Gmbh | Schnelle Leistungsdiode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807641A (en) * | 1982-08-27 | 1989-02-28 | Boehringer Laboratories | Pneumotach and components therefore and combined pulmonary function measuring kit containing the same |
| EP0220404B1 (de) * | 1985-09-30 | 1991-02-06 | Siemens Aktiengesellschaft | Verfahren zur Begrenzung von Ausbrüchen beim Sägen einer Halbleiterscheibe |
| EP0264564B1 (de) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Silizium-Temperatursensor |
| JP3994443B2 (ja) | 1995-05-18 | 2007-10-17 | 三菱電機株式会社 | ダイオード及びその製造方法 |
| DE19531369A1 (de) * | 1995-08-25 | 1997-02-27 | Siemens Ag | Halbleiterbauelement auf Siliciumbasis mit hochsperrendem Randabschluß |
-
2000
- 2000-09-22 DE DE10047152A patent/DE10047152B4/de not_active Expired - Fee Related
-
2001
- 2001-08-24 WO PCT/DE2001/003240 patent/WO2002025740A1/de not_active Ceased
- 2001-08-24 EP EP01964927A patent/EP1307923B1/de not_active Expired - Lifetime
- 2001-08-24 JP JP2002529847A patent/JP2004510333A/ja active Pending
- 2001-08-24 DE DE50107925T patent/DE50107925D1/de not_active Expired - Lifetime
-
2003
- 2003-03-24 US US10/395,425 patent/US6770917B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4487653A (en) * | 1984-03-19 | 1984-12-11 | Advanced Micro Devices, Inc. | Process for forming and locating buried layers |
| EP0341453B1 (de) * | 1988-05-11 | 1993-08-25 | Siemens Aktiengesellschaft | MOS-Halbleiterbauelement für hohe Sperrspannung |
| EP0381111B1 (de) * | 1989-02-01 | 1995-05-31 | Siemens Aktiengesellschaft | Elektroaktive Passivierschicht |
| EP0400178B1 (de) * | 1989-05-31 | 1994-08-03 | Siemens Aktiengesellschaft | Halbleiterbauelement mit Passivierungsschicht |
| DE4410354C2 (de) * | 1994-03-25 | 1996-02-15 | Semikron Elektronik Gmbh | Leistungshalbleiterbauelement |
| DE19837944A1 (de) * | 1998-08-21 | 2000-02-24 | Asea Brown Boveri | Verfahren zur Fertigung eines Halbleiterbauelements |
| DE19851461A1 (de) * | 1998-11-09 | 2000-05-18 | Semikron Elektronik Gmbh | Schnelle Leistungsdiode |
Non-Patent Citations (4)
| Title |
|---|
| C.Mingues, G.Charitat: Efficiency of Junction Termination Techniques vs. Oxide Trapped Charges, in: IEEE International Symposium on Power Semicon- ductor Devices and IC's, 1997, S.137-140 |
| C.Mingues, G.Charitat: Efficiency of Junction Termination Techniques vs. Oxide Trapped Charges, in: IEEE International Symposium on Power Semicon-ductor Devices and IC's, 1997, S.137-140 * |
| JP 08-316500 A (PAJ-Abstract) |
| JP 08316500 A (PAJ-Abstract) * |
Also Published As
| Publication number | Publication date |
|---|---|
| US6770917B2 (en) | 2004-08-03 |
| DE10047152A1 (de) | 2002-04-25 |
| JP2004510333A (ja) | 2004-04-02 |
| US20030183900A1 (en) | 2003-10-02 |
| WO2002025740A1 (de) | 2002-03-28 |
| DE50107925D1 (de) | 2005-12-08 |
| EP1307923B1 (de) | 2005-11-02 |
| EP1307923A1 (de) | 2003-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |