CS312189A2 - Method of silicon nitride production with high alpha-phase content - Google Patents
Method of silicon nitride production with high alpha-phase contentInfo
- Publication number
- CS312189A2 CS312189A2 CS893121A CS312189A CS312189A2 CS 312189 A2 CS312189 A2 CS 312189A2 CS 893121 A CS893121 A CS 893121A CS 312189 A CS312189 A CS 312189A CS 312189 A2 CS312189 A2 CS 312189A2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- silicon nitride
- phase content
- high alpha
- nitride production
- production
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0682—Preparation by direct nitridation of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/591—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU884422423A SU1696385A1 (ru) | 1988-05-24 | 1988-05-24 | Способ получени нитрида кремни |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS312189A2 true CS312189A2 (en) | 1990-10-12 |
| CS274772B2 CS274772B2 (en) | 1991-10-15 |
Family
ID=21373743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS312189A CS274772B2 (en) | 1988-05-24 | 1989-05-24 | Method of silicon nitride production with high alpha-phase content |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US5032370A (cs) |
| EP (1) | EP0377751A4 (cs) |
| JP (1) | JPH03500640A (cs) |
| CN (1) | CN1017609B (cs) |
| CS (1) | CS274772B2 (cs) |
| DD (1) | DD283792A5 (cs) |
| HU (1) | HU202451B (cs) |
| SU (1) | SU1696385A1 (cs) |
| WO (1) | WO1989011447A1 (cs) |
| YU (1) | YU46271B (cs) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2001877C1 (ru) * | 1992-01-30 | 1993-10-30 | Малое предпри тие "ДЖИПЛА ЛИМИТЕД" | Способ получени нитридов |
| JPH0733411A (ja) * | 1993-07-16 | 1995-02-03 | Shin Etsu Chem Co Ltd | 高α型窒化ケイ素粉末の製造方法 |
| ES2116154B1 (es) * | 1994-06-04 | 1999-04-01 | Shs Prometheus Espana A I E | Procedimiento de obtencion de fibras mono y policristalinas de nitruro de silicio mediante tecnologia de sintesis autopropagada a alta temperatura. |
| ES2188298B1 (es) * | 1999-06-15 | 2004-08-16 | Fundacion Inasmet | Procedimiento continuo de fabricacion de materiales en polvo por combustion y reactor para la puesta en practica del mismo. |
| EP1452578A1 (de) * | 2003-02-28 | 2004-09-01 | von Görtz & Finger Techn. Entwicklungs Ges.m.b.H. | Verfahren zur Reduzierung des Stickstoffgehaltes in Brenngasen |
| RU2257338C1 (ru) * | 2004-03-23 | 2005-07-27 | Томский научный центр СО РАН | Способ получения нитрида кремния |
| CN101229916B (zh) * | 2007-01-26 | 2011-01-12 | 中国科学院理化技术研究所 | 以聚四氟乙烯为添加剂燃烧合成氮化硅粉体的方法 |
| RU2461090C1 (ru) * | 2010-12-23 | 2012-09-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводниковой структуры |
| RU2550882C1 (ru) * | 2014-03-26 | 2015-05-20 | Федеральное государственное бюджетное учреждение науки Институт структурной макрокинетики и проблем материаловедения Российской академии наук | Способ получения альфа-фазы нитрида кремния методом свс |
| CN104671795B (zh) * | 2015-02-05 | 2016-09-28 | 武汉科技大学 | 一种单相α-Si3N4超细粉体及其制备方法 |
| JP7240800B2 (ja) * | 2015-12-24 | 2023-03-16 | エルジー・ケム・リミテッド | α窒化ケイ素の製造方法 |
| CN112028655A (zh) * | 2020-09-16 | 2020-12-04 | 江苏隆达超合金航材有限公司 | 一种高温合金钢锭模用模底砖的制备方法 |
| CN115072677A (zh) * | 2022-06-22 | 2022-09-20 | 大连理工大学 | 一种高质量氮化硅粉体合成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3726643A (en) * | 1970-04-09 | 1973-04-10 | I Khim Fiz Akademii Nauk | Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system |
| GB1448915A (en) * | 1973-10-30 | 1976-09-08 | Ford Motor Co | Process for making silicon nitride articles |
| US4122220A (en) * | 1977-09-06 | 1978-10-24 | Rosenthal Aktiengesellschaft | Method for reducing the gas permeability of a sintered porous silicon nitride body |
| JPS57175711A (en) * | 1981-04-21 | 1982-10-28 | Asahi Glass Co Ltd | Synthesis of silicon nitride |
| JPS5884108A (ja) * | 1981-11-16 | 1983-05-20 | Denki Kagaku Kogyo Kk | 高純度α型窒化珪素の製法 |
| US4579699A (en) * | 1983-09-29 | 1986-04-01 | The Boeing Company | Method for making α-Si3 N4 whiskers and articles therefrom |
| JPS63170202A (ja) * | 1987-01-07 | 1988-07-14 | Shin Etsu Chem Co Ltd | α型窒化けい素の製造方法 |
-
1988
- 1988-05-24 SU SU884422423A patent/SU1696385A1/ru active
-
1989
- 1989-04-03 JP JP1506232A patent/JPH03500640A/ja active Pending
- 1989-04-03 WO PCT/SU1989/000086 patent/WO1989011447A1/ru not_active Ceased
- 1989-04-03 US US07/457,825 patent/US5032370A/en not_active Expired - Fee Related
- 1989-04-03 HU HU893400A patent/HU202451B/hu not_active IP Right Cessation
- 1989-04-03 EP EP19890906495 patent/EP0377751A4/de not_active Withdrawn
- 1989-05-15 YU YU100089A patent/YU46271B/sh unknown
- 1989-05-22 CN CN89104609.7A patent/CN1017609B/zh not_active Expired
- 1989-05-23 DD DD89328830A patent/DD283792A5/de not_active IP Right Cessation
- 1989-05-24 CS CS312189A patent/CS274772B2/cs unknown
Also Published As
| Publication number | Publication date |
|---|---|
| YU46271B (sh) | 1993-05-28 |
| SU1696385A1 (ru) | 1991-12-07 |
| CN1038250A (zh) | 1989-12-27 |
| EP0377751A1 (de) | 1990-07-18 |
| HU893400D0 (en) | 1990-07-28 |
| YU100089A (en) | 1990-06-30 |
| EP0377751A4 (en) | 1990-12-12 |
| WO1989011447A1 (en) | 1989-11-30 |
| DD283792A5 (de) | 1990-10-24 |
| JPH03500640A (ja) | 1991-02-14 |
| CS274772B2 (en) | 1991-10-15 |
| HUT52737A (en) | 1990-08-28 |
| HU202451B (en) | 1991-03-28 |
| US5032370A (en) | 1991-07-16 |
| CN1017609B (zh) | 1992-07-29 |
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