CS240442B1 - Method of gas supply for low-pressure gas-phase precipitating chemical processes in tube reactor and equipment for performance of this method - Google Patents

Method of gas supply for low-pressure gas-phase precipitating chemical processes in tube reactor and equipment for performance of this method Download PDF

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Publication number
CS240442B1
CS240442B1 CS823771A CS377182A CS240442B1 CS 240442 B1 CS240442 B1 CS 240442B1 CS 823771 A CS823771 A CS 823771A CS 377182 A CS377182 A CS 377182A CS 240442 B1 CS240442 B1 CS 240442B1
Authority
CS
Czechoslovakia
Prior art keywords
gas
inner tube
tubular reactor
tube reactor
tube
Prior art date
Application number
CS823771A
Other languages
Czech (cs)
English (en)
Inventor
Michael Kleinert
Rainer Moeller
Horst Stelzer
Original Assignee
Michael Kleinert
Rainer Moeller
Horst Stelzer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Michael Kleinert, Rainer Moeller, Horst Stelzer filed Critical Michael Kleinert
Publication of CS240442B1 publication Critical patent/CS240442B1/cs

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)
CS823771A 1981-07-28 1982-05-21 Method of gas supply for low-pressure gas-phase precipitating chemical processes in tube reactor and equipment for performance of this method CS240442B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD81232136A DD206687A3 (de) 1981-07-28 1981-07-28 Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor

Publications (1)

Publication Number Publication Date
CS240442B1 true CS240442B1 (en) 1986-02-13

Family

ID=5532617

Family Applications (1)

Application Number Title Priority Date Filing Date
CS823771A CS240442B1 (en) 1981-07-28 1982-05-21 Method of gas supply for low-pressure gas-phase precipitating chemical processes in tube reactor and equipment for performance of this method

Country Status (6)

Country Link
US (1) US4509456A (de)
JP (1) JPS5827638A (de)
CS (1) CS240442B1 (de)
DD (1) DD206687A3 (de)
DE (1) DE3216465A1 (de)
NL (1) NL8202674A (de)

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DE3330864A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstrate unter anwendung einer cvd-beschichtungstechnik
EP0164928A3 (de) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Senkrechter Heisswandreaktor zur chemischen Abscheidung aus der Gasphase
US4703718A (en) * 1985-11-29 1987-11-03 Rca Corporation Vapor deposition apparatus and method of using same
JPS62173712A (ja) * 1986-01-27 1987-07-30 Hitachi Ltd 気相成長装置
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
US4992301A (en) * 1987-09-22 1991-02-12 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
GB2213835B (en) * 1987-12-18 1992-07-08 Gen Electric Co Plc Deposition apparatus
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
JPH0642474B2 (ja) * 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
US4911638A (en) * 1989-05-18 1990-03-27 Direction Incorporated Controlled diffusion environment capsule and system
US5178534A (en) * 1989-05-18 1993-01-12 Bayne Christopher J Controlled diffusion environment capsule and system
JPH06818Y2 (ja) * 1989-09-21 1994-01-05 日本エー・エス・エム株式会社 Ｃｖｄ装置のための基板支持装置
JPH0818902B2 (ja) * 1989-11-02 1996-02-28 シャープ株式会社 気相成長装置
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US6261524B1 (en) 1999-01-12 2001-07-17 Advanced Technology Materials, Inc. Advanced apparatus for abatement of gaseous pollutants
US6153150A (en) * 1998-01-12 2000-11-28 Advanced Technology Materials, Inc. Apparatus and method for controlled decomposition oxidation of gaseous pollutants
DE19937513B4 (de) * 1999-08-09 2004-05-06 Infineon Technologies Ag Vorrichtungen und Verfahren zur gleichverteilten Gasinjektion bei der Behandlung von Halbleitersubstraten
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7118783B2 (en) * 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6818249B2 (en) * 2003-03-03 2004-11-16 Micron Technology, Inc. Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) * 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20090233007A1 (en) * 2008-03-17 2009-09-17 Nanopv Technologies Inc. Chemical vapor deposition reactor and method
JP5240245B2 (ja) * 2010-06-22 2013-07-17 東京エレクトロン株式会社 流路切替え装置、処理装置、流路切替え方法及び処理方法並びに記憶媒体
JP6988916B2 (ja) * 2017-12-22 2022-01-05 株式会社村田製作所 成膜装置
US10677767B2 (en) * 2018-06-12 2020-06-09 Vuv Analytics, Inc. Vacuum ultraviolet absorption spectroscopy system and method

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Publication number Priority date Publication date Assignee Title
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS55167041A (en) * 1979-06-14 1980-12-26 Toshiba Corp Vertical type gaseous phase growth device
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
US4316430A (en) * 1980-09-30 1982-02-23 Rca Corporation Vapor phase deposition apparatus

Also Published As

Publication number Publication date
DE3216465A1 (de) 1983-03-17
NL8202674A (nl) 1983-02-16
JPS5827638A (ja) 1983-02-18
US4509456A (en) 1985-04-09
DD206687A3 (de) 1984-02-01

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