CN2906925Y - Semiconductor power crystal solder wire structure - Google Patents

Semiconductor power crystal solder wire structure Download PDF

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Publication number
CN2906925Y
CN2906925Y CNU2005200480819U CN200520048081U CN2906925Y CN 2906925 Y CN2906925 Y CN 2906925Y CN U2005200480819 U CNU2005200480819 U CN U2005200480819U CN 200520048081 U CN200520048081 U CN 200520048081U CN 2906925 Y CN2906925 Y CN 2906925Y
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China
Prior art keywords
electric pin
outward appearance
electrode
bonding wire
semiconductor power
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CNU2005200480819U
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Chinese (zh)
Inventor
吴家州
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GTM ELECTRONICS (SHANGHAI) CO Ltd
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GTM ELECTRONICS (SHANGHAI) CO Ltd
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0601—Structure
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Abstract

The utility model relates to a semiconductor power transistor welding structure, mainly used on small outline packing of semiconductor power transistor and the small outline cable bracket is a coplanar structure. As for the welding structure of the utility model, the cable bracket, the power transistor and the gold welding wire are not obviously different from the prior arts. But if using an aluminum belt or a copper belt as a substitution of the gold welding wire for welding a first electrode (source or positive pole) and a first electric pin, a second electric pin and a third electric pin of the cable bracket, the welding structure of the utility model can reduce 90% cost meanwhile the performance is superior to the gold welding wire.

Description

The bonding wire structure of semiconductor power crystal
[technical field]
The utility model system is about a kind of bonding wire structure of semiconductor power crystal, and finger is used for the bonding wire structure of the semiconductor power crystal of little outward appearance (smalloutline) encapsulation especially.
[background technology]
See also Fig. 1, Fig. 1 is the bonding wire structural representation of existing semiconductor power crystal.As shown in Figure 1, in existing bonding wire structure, lead frame 13 mainly has electric connection place of first electric pin, 1 to the 8th electric pin 8 and the bearing of power loading chip (almost by the source electrode 10a shelter of this chip), and this power chip then has source electrode 10a, (do not describe at same lip-deep grid 10b and drain electrode; On with respect to source electrode 10a another side).
Because the semiconductor power crystal must hold great electric current by source electrode 10a, therefore source electrode 10a area occupied just can almost contain whole plane of crystal, also must be communicated with first electric pin 1, second electric pin 2, the 3rd electric pin 3 of source electrode 10a and lead frame 13 simultaneously by several long with short gold solder line 12a.Review grid 10b, do not have too big electric current owing to belong to control electrode and pass through, so the shared area of grid 10b is then much smaller than source electrode 10a, and only need single gold solder line 12b be connected to the 4th electric pin 4.As for drain electrode, then paste mutually with the lower surface of lead frame because of whole drain electrode, and conducting to the five electric pins 5 to the 8th electric pins 8, and must not have lead to connect.
Yet this group gold solder line 12a of the conducting source electrode 10a and first electric pin 1, second electric pin 2, the 3rd electric pin 3 because it belongs to quite expensive gold, causes this kind packaging cost can not to be in any more all the time.Each encapsulation manufacturer of family can't try every possible means and reduce the use amount of gold, and seeks other substitute one after another.
Though existing many manufacturers propose to replace gold solder line 12a with the crude aluminum line, if but in little outward appearance (small outline) encapsulation, for example at little outward appearance transistor (small outline transistor, SOT), little outward appearance encapsulation (smalloutline package, SOP), little outward appearance diode (small outline diode, SOD, the little outward appearance encapsulation of shrinkage type (shrink small outline package, SSOP), slim little outward appearance encapsulation (thin small outlinepackage, TSOP), the little outward appearance encapsulation of thin and shrinkage type (thin shrink small outline package, TSSOP), double little outward appearance non-connection pin formula (small outline non-leaded, SON), quad flat non-connection pin formula (0uad Flat Non-lead, QFN) in, because space that can routing is very limited, and can't throw abundant crude aluminum line smoothly at all.
[utility model content]
Main purpose of the present utility model is providing a kind of bonding wire structure of semiconductor power crystal, by in little outward appearance (small outline) encapsulation, change with the lower-cost aluminium strip of material and one of them replacement gold solder line of copper strips, and significantly reduce about 90% cost, and its performance also is better than the gold solder line simultaneously.
Based on above-mentioned purpose, the bonding wire structure of the utility model semiconductor power crystal comprises lead frame and (comprises first electric pin, second electric pin, the 3rd electric pin, the 4th electric pin, and first electric pin, second electric pin and the 3rd electric pin are each other for linking to each other), power crystal (having first electrode (source electrode or anode) and second electrode (grid or negative electrode)), gold solder line (two ends are soldered to grid (or negative electrode) and the 4th electric pin respectively), at least one aluminium strip and copper strips one of them (its two ends are soldered to the source electrode (or anode) and first electric pin respectively, second electric pin, the 3rd electric pin).
Can be about advantage of the present utility model and spirit by following novel detailed description and appended graphic being further understood.
Bonding wire structure of the present utility model has realized the semiconductor power crystal of little outward appearance encapsulation, and with behind aluminium strip and one of them replacement of the copper strips gold solder line traditionally, the utility model bonding wire structure can significantly reduce about 90% cost, and its performance also is better than the gold solder line simultaneously.
[description of drawings]
Fig. 1 is the bonding wire structural representation of existing semiconductor power crystal.
Fig. 2 A～2B is the bonding wire structural representation of the utility model semiconductor power crystal.
Fig. 3 A～3B is another bonding wire structural representation of the utility model semiconductor power crystal.
[embodiment]
The bonding wire structure of the utility model semiconductor power crystal is mainly used in little outward appearance (small outline) encapsulation.Little outward appearance encapsulation can be divided into SOT, SOP, SSOP, TSOP, TSSOP, SON, QFN, SOD etc., but can be divided into this two big class of SOD and non-SOD because of the number of electrodes of power crystal again.The encapsulation of also even little outward appearance is non-when being SOD, and first electric pin, second electric pin and the 3rd electric pin are each other for linking to each other in its lead frame, and first electrode is source electrode, and second electrode is a grid.If little outward appearance is when being encapsulated as SOD, in its lead frame first electric pin, second electric pin, the 3rd electric pin and the 4th electric pin each other for linking to each other, and first electrode be an anode and a negative electrode one of them, and the comparative electrode that this second electrode is this first electrode.Beneath will be that example is done explanation with non-SOD earlier, be that example is done explanation again with SOD then.
See also Fig. 2 A～2B, Fig. 2 A～2B is the bonding wire structural representation of the utility model semiconductor power crystal.Shown in Fig. 2 A, from depression angle, the bonding wire structure of the utility model semiconductor power crystal mainly is the semiconductor power crystal that is used for little outward appearance encapsulation (non-SOD), and its lead frame 13, power crystal (source electrode 10a and grid 10b), gold solder line 12b still do not have too big-difference with prior art.The bonding wire structure of the utility model semiconductor power crystal mainly is to utilize aluminium strip 14,15 and replacement a group gold solder line 12a as shown in Figure 1.Thus, far below gold, and have the usefulness that is same as (even being much better than) gold solder line 12a, make the required cost of this type of bonding wire structure reaching significantly to reduce under the same effect by material cost.In addition, the material of aluminium strip 14,15 also can adopt copper, and it applies mode still as aluminium strip 14,15.
In order still to hold great electric current, the size of aluminium strip 14,15 must have certain width, that is its size can be 10mil X 2mil to 80mil X 10mil.In the selection of aluminium strip 14,15 sizes, mainly decide, so, also can only use single aluminium strip when if actual current delivery amount only needs single aluminium strip according to actual demand.
Be ready to aluminium strip at 14,15 o'clock in the foundation demand, just must belong on coplanar little outward appearance lead frame, cross welding source electrode 10a and first electric pin 1, second electric pin 2, the 3rd electric pin 3 with aluminium strip 14, and on aluminium strip 14, produce welding impression 14a, 14b, 14c, 14d simultaneously, there is not welding impression place then to be sub-aluminium strip 17a, 17b, arcuation aluminium strip portion (loop) 16 (end view shown in Fig. 2 B).The quantity that the welding impression produces also is to decide according to the actual current transmission quantity.
Though the two ends of gold solder line 12b still are soldered to grid 10b and the 4th electric pin 4 respectively as prior art, gold solder line 12b is that available fine aluminum wire replaces, and further reduces whole cost.
See also Fig. 3 A ~ 3B, Fig. 3 A ~ 3B is another bonding wire structural representation of the utility model semiconductor power crystal.As shown in Figure 3A, from depression angle, the bonding wire structure of the utility model semiconductor power crystal mainly is the semiconductor power crystal that is used for little outward appearance encapsulation (for SOD), and its lead frame 13, the power crystal ((do not describe by anode 30a and negative electrode; On the chip another side)), gold solder line 12b still do not have too big-difference with prior art.The bonding wire structure of the utility model semiconductor power crystal mainly is to utilize aluminium strip 14,15 and replacement a group gold solder line 12a as shown in Figure 1, and the conducting anode 30a and first electric pin 1, second electric pin 2, the 3rd electric pin 3, the 4th electric pin 4, and aluminium strip 14 has arcuation aluminium strip portion 16 shown in Fig. 3 B.Similarly, the material of aluminium strip 14,15 also can adopt copper, and it applies mode still as aluminium strip 14,15.As for aluminium strip 14,15 how to weld, relevant specification etc. then describes as previous.
By the above detailed description of preferred embodiments, be that hope can be known description feature of the present utility model and spirit more, and be not to come category of the present utility model is limited with above-mentioned disclosed preferred embodiment.On the contrary, its objective is that hope can contain in the category of the claim that is arranged in the desire application of the utility model institute of various changes and tool equality.

Claims (7)

1, a kind of bonding wire structure of semiconductor power crystal is this semiconductor power crystal that is used for a little outward appearance (small outline) encapsulation, and this little outward appearance lead frame is coplanar type, it is characterized in that this bonding wire structure comprises:
One lead frame is to comprise one first electric pin, one second electric pin, one the 3rd electric pin, one the 4th electric pin;
One power crystal, cording have one first electrode and one second electrode;
One bonding wire, its two ends are soldered to this second electrode and the 4th electric pin respectively; And
At least one aluminium strip and copper strips one of them, its two ends are soldered to this first electrode and this first electric pin, this second electric pin, the 3rd electric pin respectively.
2, the bonding wire structure of semiconductor power crystal according to claim 1, it is characterized in that, this little outward appearance (smalloutline) encapsulation can be little outward appearance transistor (small outline transistor, SOT), little outward appearance encapsulation (small outline package, SOP), little outward appearance diode (small outline diode, SOD, the little outward appearance encapsulation of shrinkage type (shrink small outline package, SSOP), slim little outward appearance encapsulation (thin small outline package, TSOP), the little outward appearance encapsulation of thin and shrinkage type (thin shrinksmall outline package, TSSOP), double little outward appearance non-connection pin formula (small outline non-leaded, SON), quad flat non-connection pin formula (Ouad Flat Non-lead, QFN).
3, the bonding wire structure of semiconductor power crystal according to claim 2, it is characterized in that, when being SOD as if little outward appearance (smalloutline) encapsulation is non-, this first electric pin, this second electric pin and the 3rd electric pin are each other for linking to each other, and this first electrode is an one source pole, and this second electrode is a grid.
4, the bonding wire structure of semiconductor power crystal according to claim 2, it is characterized in that, if little outward appearance (smalloutline) is when being encapsulated as SOD, this first electric pin, this second electric pin, the 3rd electric pin and the 4th electric pin are each other for linking to each other, and this first electrode be an anode and a negative electrode one of them, and the comparative electrode that this second electrode is this first electrode.
5, the bonding wire structure of semiconductor power crystal according to claim 1 is characterized in that, one of them size of this aluminium strip and copper strips can be 10mil * 2mil～80mil * 10mil.
6, the bonding wire structure of semiconductor power crystal according to claim 1 is characterized in that, this bonding wire comprises fine aluminum wire.
7, the bonding wire structure of semiconductor power crystal according to claim 1 is characterized in that, this bonding wire comprises the gold solder line.
CNU2005200480819U 2005-12-28 2005-12-28 Semiconductor power crystal solder wire structure Expired - Lifetime CN2906925Y (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163587A (en) * 2011-03-23 2011-08-24 常州市兴源电子有限公司 Interconnecting aluminum tape for packaging integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102163587A (en) * 2011-03-23 2011-08-24 常州市兴源电子有限公司 Interconnecting aluminum tape for packaging integrated circuit

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