CN2658948Y - Picture sensor flip-chip packaging structure and its picture sensor module - Google Patents
Picture sensor flip-chip packaging structure and its picture sensor module Download PDFInfo
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- CN2658948Y CN2658948Y CNU032090501U CN03209050U CN2658948Y CN 2658948 Y CN2658948 Y CN 2658948Y CN U032090501 U CNU032090501 U CN U032090501U CN 03209050 U CN03209050 U CN 03209050U CN 2658948 Y CN2658948 Y CN 2658948Y
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- chip
- sheet glass
- flip
- image sensor
- connected circuit
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000005357 flat glass Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000003292 glue Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 abstract description 22
- 238000003466 welding Methods 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011469 building brick Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
This utility model relates to a flip chip packaging structure and a module for image sensor. This structure comprises a glass sheet, under which a conductive circuit is provided. A plurality of first welding points is formed in the middle of the glass sheet, while a plurality of second welding points is collectively formed on one side of the glass sheet by the conductive circuit. Proximity to the lower surface of the glass sheet is the upper surface of the chip of the semi-conductive image sensor. Most of the electric contacts on the chip are welded onto the plurality of first welding points in the form of flip chip. The lower surface of the glass sheet other than the semi-conductive image sensor chip is covered by a shield. The flip chip packaging structure for the image sensor is connected with a lens group, which comprises a base supporting the upper surface of the glass sheet. An opening forms by enclosing the three edges of the glass by the sidewalls of the base bottom, making the part with electric contacts of the glass sheet overhang at one side of the base for welding of a circuit board.
Description
Technical field
The utility model relates to a kind of imageing sensor flip-chip (Flip Chip is called again and covers crystalline substance) encapsulating structure, also relates to the image sensor module that this structure is supported.The characteristics of this imageing sensor flip-chip encapsulating structure are to form circuit for flip-chip sheet and circuit board seam in glass sheet surface, utilize the accurate profile of sheet glass to provide the location splendid lens mount.
Background technology
Imageing sensor (Image sensor) encapsulation technology has multiple, and more generally ceramic packaging (CLCC), plastic base encapsulation (PLCC), C/F plastics penetrate encapsulation (KLCC) at present.The main common place of these encapsulation technologies is to carry out wire-bonded (Wire bonding) again after chip is implanted chip base (Die pad).Yet electronic product is under compact, multi-functional, fireballing requirement, and the I/O number of pins of electronic building brick is more and more, but thickness is more and more thinner, and area is more and more littler.After plug-type assembly is subjected to the size restrictions of patchhole on the circuit board, surface mount technology just be developed solve plug in package can't be again with the pin number increases and volume reduces shortcoming.Yet the spacing of pin is more and more littler, has surmounted printed circuit board (PCB) in the technical limit of high density, and people change the mode of pin arrangement on the assembly array arrangement of plane into from the periphery for this reason, thereby has improved the rate of finished products of assembling.But under the situation that the I/O number of pins day by day increases, the size of packaging body certainly will increase thereupon, must follow many as empty weldering of substrate tin ball or base plate deformation warping phenomenon.The most effective practice that addresses these problems is as far as possible the colloid beyond the chip partly to be dwindled.When volume and die size are similar after the encapsulation, promptly produce the notion of approximate chip size packages.
Based on aforementioned, the trend of encapsulation technology is towards the flip-chip package mode at present, this kind mode need be after long projection (Bump) technology on the wafer (Wafer) engages with circuit junction reflow on the substrate again, therefore need be with chip end face forward substrate, so just be subjected to the restriction of the prerequisite that the sensing area of imageing sensor must open, therefore though flip-chip encapsulating structure has that electrical characteristic is good, chip cooling is good and advantage such as package dimension is less, this technology is used on imageing sensor still has difficulty.
Figure 9 shows that existing a kind of imageing sensor flip-chip encapsulating structure, glass plate (91) inner face of top is to utilize light shield etching technique framework to go out circuit (910), and with tin ball (93) by flip chip technology with the circuit junction of chip (92) seam at the glass plate middle section, and the circuit junction of glass plate neighboring area respectively plants a tin ball (94) so that adhere with circuit board surface.The problem of this kind design is that tin ball (94) sphere diameter of glass plate neighboring area must could have than high-reliability greater than chip thickness when welding in circuit board, thus for keeping the suitable spacing of each tin ball the glass plate area must to be strengthened, relatively also influenced the lens mount size that covers imageing sensor, still had improved necessity so plant flip-chip encapsulating structure.
Summary of the invention
Main purpose of the present utility model is to provide a kind of imageing sensor flip-chip encapsulating structure for solving the above problems, this encapsulating structure can be finished assembling with the SMT sealed in unit, simplify the demand of equipment and promote production reliability with this, and obtain lower manufacturing cost and encapsulation volume is significantly reduced more to accord with the demands of the market.In addition, the utility model also provides a kind of image capture circuit module that adopts above-mentioned encapsulating structure, and this kind module has short and small, the lightening advantage of volume.
For reaching above-mentioned purpose, the utility model adopts following technical scheme:
A kind of imageing sensor flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, establishes most weld pad on this semiconductor image sensor chip, plants a metal soldered ball on each weld pad; The lower surface of this sheet glass is formed with the conduction connected circuit, and this conduction connected circuit forms respective amount in the position of corresponding semiconductor image sensor chip weld pad first pad is electrically connected to form with this weld pad; This conduction connected circuit sheet glass wherein a side converge and to be shaped to most second pads.
Another kind of imageing sensor flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, and this semiconductor image sensor chip is provided with most projections; The upper surface of this sheet glass is formed with the conduction connected circuit, first pad that position of the corresponding semiconductor image sensor projection of this conduction connected circuit forms respective amount is electrically connected to form with projection, this conduction connected circuit sheet glass wherein a side converge and be shaped to individual second pads of majority.
A kind of image sensor module that adopts flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, establishes most electric contacts on this semiconductor image sensor chip; The lower surface of this sheet glass is formed with the conduction connected circuit, this conduction connected circuit is electrically connected to form with electric contact at first pad that position that should the semiconductor image sensor electric contact is formed respective amount, this conduction connected circuit sheet glass wherein a side converge and be shaped to individual second pads of majority;
One lens group comprises a bearing, this rest base forms a side wall that is at least this sheet glass thickness to seat supports at the sheet glass upper surface and at the sheet glass edge, this side wall is along the extension of sheet glass three lateral edges and form an opening, makes the sheet glass at this conduction connected circuit contact place stretch in bearing one side outward.
Advantage of the present utility model is to provide by the plane precision of glass sheet surface the installation base surface of bearing the best, obtain the accurate perpendicular quadrature of lens group optical axis and semiconductor image sensor chip surface with this, relend the side wall that helps bearing and rely on the sheet glass contour accuracy, can in assembling process, obtain the effect that the lens group optical axis is aimed at the image sensing center of semiconductor image sensor chip fully easily, thereby control the image capture position easily in more aberrationless camera lens projection area.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is further described.
Fig. 1 is first embodiment of imageing sensor flip-chip encapsulating structure described in the utility model.
Fig. 2 is second embodiment of imageing sensor flip-chip encapsulating structure described in the utility model.
Fig. 3 is the schematic diagram of the conduction connected circuit that the sheet glass lower surface forms in the imageing sensor flip-chip encapsulating structure described in the utility model.
Fig. 4 is the schematic diagram of another form of the conduction connected circuit that the sheet glass lower surface forms in the imageing sensor flip-chip encapsulating structure described in the utility model.
Fig. 5 finishes the conduction connected circuit schematic diagram of most blocks with the large-area glass sheet in processing procedure for the utility model imageing sensor flip-chip package.
Fig. 6 finishes the most blocks of large-area glass sheet the schematic diagram of semiconductor image sensor chip seam in manufacturing process for imageing sensor flip-chip encapsulating structure described in the utility model.
Fig. 7 is first embodiment of flip-chip package image sensor module described in the utility model.
Fig. 8 is second embodiment of flip-chip package image sensor module described in the utility model.
Fig. 9 is the schematic diagram of existing image sensor package structure.
Embodiment
As shown in Figure 1, first embodiment (1) of imageing sensor flip-chip encapsulating structure described in the utility model comprises: its upper surface of semiconductor image sensor chip (Chip) (10) (11) presses close to the lower surface of a sheet glass (20) and filling glue material (12) is airtight to constitute on every side in chip, this semiconductor image sensor chip is provided with most weld pad (111), and plants the metal soldered ball (13) of tin ball and so at each weld pad.
The lower surface of this sheet glass (20) is formed with conduction connected circuit (conductiveinterconnection circuit) (21), the position of corresponding semiconductor image sensor chip weld pad (111), this conduction connected circuit forms first pad (22) of respective amount, and is electrically connected with weld pad formation.
Conduction connected circuit (21) sheet glass wherein a side converge and to be shaped to most second pads (211), as shown in Figure 3.
Cover a veil (24) at semiconductor image sensor chip (10) sheet glass lower surface in addition, use the image acquisition quality that prevents sheet glass bottom printing opacity and disturb semiconductor image sensor chip, airtight around the semiconductor image sensor chip can be provided simultaneously.
Figure 2 shows that second embodiment (3) of imageing sensor flip-chip encapsulating structure described in the utility model, comprise: semiconductor image sensor chip (30), its upper surface (31) is pressed close to the lower surface of a sheet glass (20), filling glue material (12) is airtight to constitute around the chip, establishes most projections (311) on this semiconductor image sensor chip.
The lower surface of this sheet glass (20) is formed with conduction connected circuit (21), corresponding semiconductor image sensor bump position should the conduction connected circuit forms first pad (22) of respective amount and mat reflow technology and forms with projection (311) and to be electrically connected, this conduction connected circuit and sheet glass wherein a side converge and be shaped to individual second pads (211) of majority.
Semiconductor image sensor chip (30) sheet glass lower surface in addition covers a veil (24), disturb the image capture quality of semiconductor image sensor chip in order to prevent sheet glass bottom printing opacity, airtight around the semiconductor image sensor chip can be provided simultaneously.
The manufacturing process of aforementioned two kinds of image sensor package structures is: as showing among Fig. 5, a large-area glass plate (2), wherein the conduction connected circuit (21) with most blocks is made on a surface with the light shield etching technique, as showing among Fig. 6, utilize most first pads (22) of SMT sealed in unit in corresponding each block of glass plate another side that semiconductor image sensor chip (10) or (30) are being welded in the flip-chip mode, each first pad is electrically connected with weld pad (or projection) on the semiconductor image sensor chip.
Last again glass plate is cut into the imageing sensor that several finish encapsulation according to each block, and looks the demand of backend application product and determine whether cover a veil (24) at semiconductor image sensor chip (30) sheet glass lower surface in addition.
As Fig. 1, image sensor package structure shown in Figure 2, conduction connected circuit on the sheet glass forms with etch process, so can in extremely narrow width, connect up, can obtain extremely encapsulation volume (CSP near chip size, Chip Scale Package) and thickness as thin as a wafer, and the conduction connected circuit sheet glass wherein a side converge and to be shaped to most second pads, more can be widely used in and be employed circuit board (FPC) welding of product, and these second pads all can have big spacing under suitable route planning, thereby the reliability of circuit board welding is had substantial lifting.
Certainly the utility model can comprise the design variation that other are different, all conduction connected circuits (21) as shown in Figure 3, sheet glass wherein a side form second pad (211) of most spacing parallel arrangings, also can be distributing with the array form as shown in Figure 4, this helps being avoided conducting electricity the connected circuit pad when the more number of pins of image sensor chip tool overstocked and influence the reliability that subsequent conditioning circuit plate (FPC) welds.
Also can on connected circuit, weld a processor (not shown) so that further image sensor module application to be provided in addition in the flip-chip mode.
The utility model can further utilize earlier figures image-position sensor encapsulating structure (1) (3) to make image sensor module, as Fig. 7, shown in Figure 8, one lens group (4) comprises a bearing (holder) (40), seat supports is at sheet glass (20) upper surface, this rest base formation one has the side wall (41) of sheet glass thickness at least at the sheet glass edge, side wall extends and forms an opening (411) along sheet glass three lateral edges, make the sheet glass at conduction connected circuit contact place stretch in bearing one side outward, and a circuit board (FPC) (50) welding is provided.The utility model also can plate filter in glass sheet surface according to demand, thereby omits the way that generally needs to install additional in addition filter glass in lens group.
Claims (17)
1. imageing sensor flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, establishes most weld pad on this semiconductor image sensor chip, plants a metal soldered ball on each weld pad; The lower surface of this sheet glass is formed with the conduction connected circuit, and this conduction connected circuit forms respective amount in the position of corresponding semiconductor image sensor chip weld pad first pad is electrically connected to form with this weld pad; This conduction connected circuit sheet glass wherein a side converge and to be shaped to most second pads.
2. imageing sensor flip-chip encapsulating structure as claimed in claim 1 is characterized in that: filling glue material is airtight to constitute around this chip.
3. imageing sensor flip-chip encapsulating structure as claimed in claim 1 is characterized in that: this conduction connected circuit distributes with the array form at most second pads that the sheet glass side forms.
4. imageing sensor flip-chip encapsulating structure as claimed in claim 1 is characterized in that: most the second pad spacing parallel arrangings that this conduction connected circuit forms at the sheet glass side.
5. imageing sensor flip-chip encapsulating structure as claimed in claim 1 is characterized in that: this sheet glass comprises a processor that is welded on this conduction connected circuit in the flip-chip mode.
6. imageing sensor flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, and this semiconductor image sensor chip is provided with most projections; The upper surface of this sheet glass is formed with the conduction connected circuit, first pad that position of the corresponding semiconductor image sensor projection of this conduction connected circuit forms respective amount is electrically connected to form with projection, this conduction connected circuit sheet glass wherein a side converge and be shaped to individual second pads of majority.
7. imageing sensor flip-chip encapsulating structure as claimed in claim 6 is characterized in that: filling glue material is airtight to constitute around this chip.
8. imageing sensor flip-chip encapsulating structure as claimed in claim 6 is characterized in that: this conduction connected circuit distributes with the array form at most second pads that the sheet glass side forms.
9. imageing sensor flip-chip encapsulating structure as claimed in claim 6 is characterized in that: most the second pad spacing parallel arrangings that this conduction connected circuit forms at the sheet glass side.
10. imageing sensor flip-chip encapsulating structure as claimed in claim 6 is characterized in that: this sheet glass comprises a processor that is welded on this conduction connected circuit in the flip-chip mode.
11. an image sensor module that adopts flip-chip encapsulating structure, it is characterized in that: it comprises:
The semiconductor image sensor chip, its upper surface is pressed close to the lower surface of a sheet glass, establishes most electric contacts on this semiconductor image sensor chip; The lower surface of this sheet glass is formed with the conduction connected circuit, this conduction connected circuit is electrically connected to form with electric contact at first pad that position that should the semiconductor image sensor electric contact is formed respective amount, this conduction connected circuit sheet glass wherein a side converge and be shaped to individual second pads of majority;
One lens group comprises a bearing, this rest base forms a side wall that is at least this sheet glass thickness to seat supports at the sheet glass upper surface and at the sheet glass edge, this side wall is along the extension of sheet glass three lateral edges and form an opening, makes the sheet glass at this conduction connected circuit contact place stretch in bearing one side outward.
12. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 11 is characterized in that: the electric contact on this semiconductor image sensor chip is a weld pad, has planted a metal soldered ball on each weld pad.
13. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 12 is characterized in that: this conduction connected circuit sheet glass wherein most contacts of forming of a side distribute with the array form.
14. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 12 is characterized in that: this conduction connected circuit comprises one and is welded on processor on the sheet glass in the flip-chip mode.
15. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 11 is characterized in that: the electric contact on this semiconductor image sensor chip is a projection.
16. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 15 is characterized in that: this conduction connected circuit sheet glass wherein most contacts forming of a side distribute with the array form.
17. the image sensor module of employing flip-chip encapsulating structure as claimed in claim 15 is characterized in that: this conduction connected circuit comprises one and is welded on processor on the sheet glass in the flip-chip mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032090501U CN2658948Y (en) | 2003-09-05 | 2003-09-05 | Picture sensor flip-chip packaging structure and its picture sensor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032090501U CN2658948Y (en) | 2003-09-05 | 2003-09-05 | Picture sensor flip-chip packaging structure and its picture sensor module |
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| Publication Number | Publication Date |
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| CN2658948Y true CN2658948Y (en) | 2004-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU032090501U Expired - Fee Related CN2658948Y (en) | 2003-09-05 | 2003-09-05 | Picture sensor flip-chip packaging structure and its picture sensor module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512767B (en) * | 2006-07-10 | 2012-09-26 | 肖特股份公司 | Optoelectronic products and manufacturing method thereof |
| CN105990379A (en) * | 2015-02-25 | 2016-10-05 | 联想(北京)有限公司 | Photosensitive module group and manufacturing method thereof |
-
2003
- 2003-09-05 CN CNU032090501U patent/CN2658948Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512767B (en) * | 2006-07-10 | 2012-09-26 | 肖特股份公司 | Optoelectronic products and manufacturing method thereof |
| CN105990379A (en) * | 2015-02-25 | 2016-10-05 | 联想(北京)有限公司 | Photosensitive module group and manufacturing method thereof |
| CN105990379B (en) * | 2015-02-25 | 2019-07-26 | 联想(北京)有限公司 | A kind of photosensitive mould group and production method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |